Title:
DETECTION DIODE
Document Type and Number:
WIPO Patent Application WO/2017/130722
Kind Code:
A1
Abstract:
To ensure good detection characteristics by suppressing degradation of I-V characteristics of a heterojunction barrier diode (HBD) which operates with zero bias in the THz frequency band. The detection diode is provided with a semiconductor laminated structure, wherein a high concentration n-type first semiconductor layer, a second semiconductor layer having a smaller electron affinity in comparison to that of the first semiconductor layer, and an n-type third semiconductor layer 1 are laminated in order; a heterobarrier is formed at the second semiconductor layer side of an interface between the first semiconductor layer and the second semiconductor layer; the barrier height of the heterobarrier is adjusted by adjusting the doping level of the first semiconductor layer; an anode electrode is formed on the first semiconductor layer; a cathode electrode is formed on the third semiconductor layer; the second semiconductor layer including an undoped barrier layer which contacts the first semiconductor layer, and an n-type barrier layer which contacts the third semiconductor layer.
Inventors:
ITOH HIROKI (JP)
SHIMIZU MAKOTO (JP)
ISHIBASHI TADAO (JP)
ITO HIROSHI (JP)
SHIMIZU MAKOTO (JP)
ISHIBASHI TADAO (JP)
ITO HIROSHI (JP)
Application Number:
PCT/JP2017/000896
Publication Date:
August 03, 2017
Filing Date:
January 12, 2017
Export Citation:
Assignee:
NTT ELECTRONICS CORP (JP)
SCHOOL JURIDICAL PERSON KITASATO INST (JP)
SCHOOL JURIDICAL PERSON KITASATO INST (JP)
International Classes:
H01L29/861; H01L29/205; H01L29/868
Foreign References:
| JP2014519711A | 2014-08-14 | |||
| JPS56120170A | 1981-09-21 |
Other References:
ITO H. ET AL.: "Fermi-level managed barrier diode for broadband and low-noise terahertz-wave detection", ELECTRONICS LETTERS, vol. 51, no. 18, 3 September 2015 (2015-09-03), pages 1440 - 1442, XP006053371, DOI: doi:10.1049/el.2015.1743
Attorney, Agent or Firm:
TANI & ABE, P.C. (JP)
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