Title:
DEVELOPER COMPOSITION FOR RESISTS AND METHOD FOR FORMATION OF RESIST PATTERN
Document Type and Number:
WIPO Patent Application WO2005001578
Kind Code:
A3
Abstract:
A developer composition for resists which has a high dissolution rate (high developing sensitivity). The developer composition for resists is a developer composition for resists, comprising an organic quaternary ammonium base as a main component and a surfactant, said surfactant containing an anionic surfactant represented by the following general formula (I), wherein at least one member of R1 and R2 represents an alkyl or alkoxy group having 5 to 18 carbon atoms and any reminder member represents a hydrogen atom, or an alkyl or alkoxy group having 5 to 18 carbon atoms, and at least one member of R3, R4 and R5 represents a group represented by the general formula (II), wherein M represents a metal atom, and any reminder member represents a hydrogen atom or a group represented by the general formula (II).
Inventors:
WASHIO YASUSHI (JP)
SAITO KOJI (JP)
SAITO KOJI (JP)
Application Number:
PCT/JP2004/009077
Publication Date:
December 08, 2005
Filing Date:
June 22, 2004
Export Citation:
Assignee:
TOKYO OHKA KOGYO CO LTD (JP)
WASHIO YASUSHI (JP)
SAITO KOJI (JP)
WASHIO YASUSHI (JP)
SAITO KOJI (JP)
International Classes:
G03F7/32; H01L21/027; (IPC1-7): G03F7/32
Foreign References:
| US5985525A | 1999-11-16 | |||
| EP0272686A2 | 1988-06-29 | |||
| EP0323836A2 | 1989-07-12 | |||
| US6329126B1 | 2001-12-11 |
Other References:
PATENT ABSTRACTS OF JAPAN vol. 016, no. 540 (P - 1450) 10 November 1992 (1992-11-10)
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