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Title:
DEVICE INTEGRATING JUNCTION FIELD-EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2018/041082
Kind Code:
A1
Abstract:
A device integrating a junction field-effect transistor (JFET), comprising: a drain electrode (201), having a first conductivity type, a portion of the drain electrode (201) being in a JFET region and the other portion being in a power device region; a first conductivity type region (214), disposed on a front surface of the drain electrode (201), a portion of the first conductivity type region (214) being located in the JFET region and the other portion being located in the power device region. The JFET region comprises: a JFET source electrode (208), having a first conductivity type; a metal electrode (212), formed on the JFET source electrode (208) and in contact with the JFET source electrode (208); composite well region structures, having a second conductivity type and being disposed in the first conductivity type region (214), the composite well region structures comprising a first well (202) and a second well (205) located in the first well (202), the ion concentration of the second well (205) being greater than the ion concentration of the first well (202). A composite well region structure is formed on each of two sides of the JFET source electrode (208), the JFET source electrode (208) extending laterally into the first well (202) and the second well (205), and the first conductivity type being opposite to the second conductivity type; and a JFET metal grid electrode (213), disposed on the composite well structures on both sides of the JFET source electrode (208).

Inventors:
GU, Yan (No.8 Xinzhou Road, Wuxi New District, Jiangsu 8, 214028, CN)
CHENG, Shikang (No.8 Xinzhou Road, Wuxi New District, Jiangsu 8, 214028, CN)
ZHANG, Sen (No.8 Xinzhou Road, Wuxi New District, Jiangsu 8, 214028, CN)
Application Number:
CN2017/099402
Publication Date:
March 08, 2018
Filing Date:
August 29, 2017
Export Citation:
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Assignee:
CSMC TECHNOLOGIES FAB2 CO., LTD. (No.8 Xinzhou Road, Wuxi New District, Jiangsu 8, 214028, CN)
International Classes:
H01L27/02; H01L27/06; H01L29/06
Foreign References:
CN103022035A2013-04-03
CN102034820A2011-04-27
CN102751277A2012-10-24
CN101950759A2011-01-19
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (Room 3901, No. 85 Huacheng Avenue Tianhe Distric, Guangzhou Guangdong 3, 510623, CN)
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