Title:
DEVICE FOR MANUFACTURING AND METHOD FOR MANUFACTURING MEMORY ELEMENT
Document Type and Number:
WIPO Patent Application WO/2012/070551
Kind Code:
A1
Abstract:
Provided are a device for manufacturing and a method for manufacturing a memory element having a metal oxide layer with etching resistance.
Anisotropic etching is performed by the metal oxide layer (14) reacting with etching gas containing chlorine in the chemical structure thereof and generating a chloride gas, which is eliminated by vacuum exhausting. Etching products (25) adhere to the side wall parts that have been etched and remain because the vapor pressure is low at the temperature during etching. These etching products (25) are water soluble; therefore, directly after etching, the etched surfaces are brought into contact with a washing fluid and the etching products (25) are eliminated by dissolution. Thus, a memory element (5) for which a pattern is formed by the metal oxide layer (14) can be obtained.
Inventors:
YOSHIDA YOSHIAKI (JP)
KOKAZE YUTAKA (JP)
KOKAZE YUTAKA (JP)
Application Number:
PCT/JP2011/076851
Publication Date:
May 31, 2012
Filing Date:
November 22, 2011
Export Citation:
Assignee:
ULVAC INC (JP)
YOSHIDA YOSHIAKI (JP)
KOKAZE YUTAKA (JP)
YOSHIDA YOSHIAKI (JP)
KOKAZE YUTAKA (JP)
International Classes:
H01L27/10; H01L21/304; H01L21/3065; H01L27/105; H01L45/00; H01L49/00
Foreign References:
| JP2001347236A | 2001-12-18 | |||
| JP2010226058A | 2010-10-07 | |||
| JP2010232213A | 2010-10-14 |
Attorney, Agent or Firm:
ISHIJIMA, Shigeo et al. (JP)
Shigeo Ishijima (JP)
Shigeo Ishijima (JP)
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Claims:
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