DEVICE AND METHOD FOR FORMING LOW-TEMPERATURE POLYSILICON FILM

WIPO Patent Application WO/2011/158612

A1

With the disclosed method, it is possible to freely adjust the direction of growth of crystal grains in accordance with the position that is to be polycrystallized, and at that position, a low-temperature polysilicon film is obtained of which the direction of growth of the crystal grains is assembled in a set direction. A light-shield region (31) that is of laser light and that extends in one direction and a transmitting region (32) are provided to a mask (3) in a manner so as to be neighboring in a direction perpendicular to the aforementioned one direction. By means of a microlens (5), laser light is radiated with the mask (3) therebetween to a region (7) at which channel region formation is planned. The laser light that is transmitted through the transmitting region (32) is radiated to an a-Si:H film, annealing and polycrystallizing this portion. Next, when the mask (3) is removed and laser light is radiated to the entire planned region (7), the melting point of the region that is already polycrystallized is raised and so this region does not melt, and the region that remains amorphous is melted and solidified, and is polycrystallized.

HAMANO KUNIYUKI (JP)
KAJIYAMA KOICHI (JP)
MIZUMURA MICHINOBU (JP)

PCT/JP2011/061772

December 22, 2011

May 23, 2011

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V TECHNOLOGY CO LTD (JP)
HAMANO KUNIYUKI (JP)
KAJIYAMA KOICHI (JP)
MIZUMURA MICHINOBU (JP)

H01L21/268; H01L21/20; H01L21/336; H01L29/786

JP2008055467A	2008-03-13
JP2004311906A	2004-11-04
JP2003203874A	2003-07-18
JP2003109911A	2003-04-11
JP2001269789A	2001-10-02
JPH04246819A	1992-09-02

FUJIMAKI, MASANORI (JP)
Masanori Fujimaki (JP)

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