Title:
DEVICE AND METHOD FOR SYNTHESIZING INDIUM PHOSPHIDE AND PREPARING VGF CRYSTAL
Document Type and Number:
WIPO Patent Application WO/2024/012521
Kind Code:
A1
Abstract:
A device and a method for synthesizing indium phosphide and preparing a VGF crystal. Firstly, indium is placed in a crucible, and phosphorus is placed in the center of an auxiliary crucible area; the crucible is then heated, and a centrifugal force is applied thereto; and under the action of the centrifugal force, an indium melt surrounds a main crucible area to form a barrel shape, and the indium and phosphorus are in a surface-contact separation state. By means of multi-temperature-zone heating, indium and phosphorus are heated to different temperatures, and the volatile element, i.e. phosphorus, sublimes and is then combined with the metal element, i.e. indium. After synthesis is finished, the rotation speed of the crucible is reduced, the synthesized melt is in a horizontal state, and boron oxide is introduced therein to realize crystal growth.
Inventors:
WANG SHUJIE (CN)
SUN NIEFENG (CN)
SHI YANLEI (CN)
LIU ZHENG (CN)
SHAO HUIMIN (CN)
DANG JIPING (CN)
XU SENFENG (CN)
JIANG JIAN (CN)
LI XIAOLAN (CN)
WANG YANG (CN)
ZHANG XIAODAN (CN)
LIU HUISHENG (CN)
SUN NIEFENG (CN)
SHI YANLEI (CN)
LIU ZHENG (CN)
SHAO HUIMIN (CN)
DANG JIPING (CN)
XU SENFENG (CN)
JIANG JIAN (CN)
LI XIAOLAN (CN)
WANG YANG (CN)
ZHANG XIAODAN (CN)
LIU HUISHENG (CN)
Application Number:
PCT/CN2023/107178
Publication Date:
January 18, 2024
Filing Date:
July 13, 2023
Export Citation:
Assignee:
THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION (CN)
International Classes:
C30B11/00; C30B29/40; C30B30/00
Foreign References:
| CN115198369A | 2022-10-18 | |||
| CN104451858A | 2015-03-25 | |||
| CN113308738A | 2021-08-27 | |||
| US4267154A | 1981-05-12 | |||
| KR20170116684A | 2017-10-20 |
Attorney, Agent or Firm:
SHIJIAZHUANG, ZHONGZHIHUAQING, INTELLECTUAL PROPERTY FIRM (SPECIAL GENERAL PARTNERSHIP) (CN)
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