DEVICE FOR PRODUCING POLYCRYSTALLINE SILICON AND METHOD FOR PRODUCING POLYCRYSTALLINE SILICON

Title:

DEVICE FOR PRODUCING POLYCRYSTALLINE SILICON AND METHOD FOR PRODUCING POLYCRYSTALLINE SILICON

Document Type and Number:

WIPO Patent Application WO/2012/147300

Kind Code:

A1

Abstract:

This device for producing polycrystalline silicon includes at least a core wire holder (13) that is made of carbon and that holds a silicon core wire (11), and an electrode (10) for passing a current through the silicon core wire (11), wherein a heat insulating sheet (17) is arranged at least in one location in the electroconductive path leading from the electrode (10) to the silicon core wire (11). The thermal conductivity in the thickness direction of the heat insulating sheet (17) is lower than the thermal conductivity of the core wire holder (13). Thus, it is possible to reduce the extent to which the heat of the silicon core wire (11) heated by a carbon heater is radiated toward the electrode (10), and to efficiently raise the temperature of the silicon core wire (11) at the start of a deposition reaction and at the start of current passage.

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Inventors:

KUROSAWA YASUSHI (JP)
NETSU SHIGEYOSHI (JP)

Application Number:

PCT/JP2012/002619

Publication Date:

November 01, 2012

Filing Date:

April 16, 2012

Export Citation:

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Assignee:

SHINETSU CHEMICAL CO (JP)
KUROSAWA YASUSHI (JP)
NETSU SHIGEYOSHI (JP)

International Classes:

C01B33/02; C01B33/035

Domestic Patent References:

WO2011045881A1

2011-04-21

Foreign References:

JP2006240934A	2006-09-14
JP2006016243A	2006-01-19
JP2011195439A	2011-10-06

Attorney, Agent or Firm:

OHNO, Seiji et al. (JP)
Seiji Ono (JP)

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