Title:
DEVICE FOR TREATING SEMICONDUCTOR PROCESS EXHAUST GAS
Document Type and Number:
WIPO Patent Application WO/2022/225326
Kind Code:
A1
Abstract:
Provided is a device for treating a semiconductor process exhaust gas, for treating an exhaust gas which is produced from a semiconductor process and is directed toward a vacuum pump. The device for treating a semiconductor process exhaust gas comprises: a plasma generating part for generating a plasma; a reaction chamber in which a perfluoride is decomposed by the plasma so as to generate a decomposition gas; and a gas supply part for supplying the decomposition gas from the reaction chamber to a treatment chamber in which the exhaust gas from a semiconductor process is introduced and treated exhaust gas is discharged to the vacuum pump, wherein the decomposition gas may react with the exhaust gas in the treatment chamber so as to suppress the generation of solid state salts by a component of the exhaust gas.
Inventors:
YOON JONG PIL (KR)
Application Number:
PCT/KR2022/005650
Publication Date:
October 27, 2022
Filing Date:
April 20, 2022
Export Citation:
Assignee:
PLASMA SCIENCE SYSTEM CO LTD (KR)
International Classes:
B01D53/32; H01L21/67; H05H1/34
Foreign References:
| KR20190080501A | 2019-07-08 | |||
| KR101934561B1 | 2019-03-25 | |||
| KR101957440B1 | 2019-03-12 | |||
| KR20160075113A | 2016-06-29 | |||
| JPH06318579A | 1994-11-15 |
Attorney, Agent or Firm:
E-SANG PATENT & TRADEMARK LAW FIRM (KR)
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