DIAMOND SEMICONDUCTOR DEVICE - UNIV HOKKAIDO NAT UNIV CORP

Title:

DIAMOND SEMICONDUCTOR DEVICE

Document Type and Number:

WIPO Patent Application WO/2016/104684

Kind Code:

A1

Abstract:

This diamond semiconductor device comprises a p-type region that is formed of diamond, and a p-type impurity in the p-type region is composed of boron including two isotopes 10B and 11B. The concentration ratio of the isotopes contained in the p-type region, namely 10B/11B is smaller than the natural abundance ratio of the isotopes.

More Like This:

JP7074045	Nitride semiconductor device manufacturing method and nitride semiconductor device
WO/2009/014195	SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, HIGH CARRIER MOBILITY TRANSISTOR AND LIGHT EMITTING DEVICE
JPH02232942	COMPOUND SEMICONDUCTOR DEVICE

Inventors:

KANEKO JUNICHI (JP)
TSUBOTA MASAKATSU (JP)
UMEZAWA HITOSHI (JP)
SHIKATA SHINICHI (JP)
TSUBOUCHI NOBUTERU (JP)
KOIZUMI SATOSHI (JP)

Application Number:

PCT/JP2015/086187

Publication Date:

June 30, 2016

Filing Date:

December 25, 2015

Export Citation:

Click for automatic bibliography generation Help

Assignee:

UNIV HOKKAIDO NAT UNIV CORP (JP)
NAT INST OF ADVANCED IND SCIEN (JP)
NAT INST FOR MATERIALS SCIENCE (JP)

International Classes:

H01L21/338; C01B31/06; H01L21/205; H01L21/265; H01L21/336; H01L29/78; H01L29/812; H01L29/872

Foreign References:

JPH06232050A	1994-08-19
JPS60183768A	1985-09-19
JP2013540676A	2013-11-07
JPH07106267A	1995-04-21
JP2004079930A	2004-03-11
JP2002076369A	2002-03-15