DIAMONDOID-CONTAINING MATERIALS IN MICROELECTRONICS

Title:

DIAMONDOID-CONTAINING MATERIALS IN MICROELECTRONICS

Document Type and Number:

WIPO Patent Application WO2002058139

Kind Code:

A3

Abstract:

Novel uses of diamondoid-containing materials in the field of microelectronics are disclosed. Embodiments include, but are not limited to, thermally conductive films in integrated circuit packaging, low-k dielectric layers in integrated circuit multilevel interconnects, thermally conductive adhesive films, thermally conductive films in thermoelectric cooling devices, passivation films for integrated circuit devices (ICs), and field emission cathodes. The diamondoids employed in the present invention may be selected from lower diamondoids, as well as the newly provided higher diamondoids, including substituted and unsubstituted diamondoids. The higher diamondoids include tetramantane, pentamantane, hexamantane, heptamantane, octamantane, nonamantane, decamantane, and undecamantane. The diamondoid-containing material may be fabricated as a diamondoid-containing polymer, a diamondoid-containing sintered ceramic, a diamondoid ceramic composite, a CVD diamondoid film, a self-assembled diamondoid film, and a diamondoid-fullerene composite.

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Inventors:

DAHL JEREMY E (US)
CARLSON ROBERT M (US)
LIU SHENGGAO (US)

Application Number:

PCT/US2002/000506

Publication Date:

October 16, 2003

Filing Date:

January 17, 2002

Export Citation:

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Assignee:

CHEVRON USA INC (US)
DAHL JEREMY E (US)
CARLSON ROBERT M (US)
LIU SHENGGAO (US)

International Classes:

C07C4/00; H01L23/373; C07C7/04; C07C7/12; C07C7/135; C07C13/64; C07C17/10; C07C17/16; C07C17/383; C07C17/395; C07C23/20; C07C47/347; C07C49/423; C07C205/05; C08G61/00; C08G61/02; C08G83/00; C08L65/00; (IPC1-7): H01L23/373

Foreign References:

US5019660A	1991-05-28
US5414189A	1995-05-09
US5053434A	1991-10-01
US5146314A	1992-09-08
EP1052307A2	2000-11-15
EP0450315A1	1991-10-09

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