Title:
DIELECTRIC RESONATOR
Document Type and Number:
WIPO Patent Application WO2002097963
Kind Code:
A3
Abstract:
High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. The compliant substrate includes an accommodating buffer layer (235) that is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (234) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer (235). The accommodating buffer layer (235) is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer (235) and the underlying silicon substrate (222) is taken care of by the amorphous interface layer (234). The use of monocrystalline dielectric material as a layer facilitates the fabrication of on chip high frequency communications devices such as dielectric resonators with direct interface to compound semiconductor material in the integrated circuit.
Inventors:
IRWIN JAMES S
Application Number:
PCT/US2001/049481
Publication Date:
July 17, 2003
Filing Date:
December 27, 2001
Export Citation:
Assignee:
MOTOROLA INC (US)
International Classes:
H01P7/10; H03B5/18; H01L21/20; (IPC1-7): H03B5/18; H01L21/20; H01L21/205; H01P7/10
Foreign References:
| EP0309270A2 | 1989-03-29 | |||
| US6143366A | 2000-11-07 | |||
| US6045626A | 2000-04-04 | |||
| US5141894A | 1992-08-25 |
Other References:
TEWKSBURY S K ET AL: "Cointegration of optoelectronics and submicron CMOS", WAFER SCALE INTEGRATION, 1993. PROCEEDINGS., FIFTH ANNUAL IEEE INTERNATIONAL CONFERENCE ON SAN FRANCISCO, CA, USA 20-22 JAN. 1993, NEW YORK, NY, USA,IEEE, US, 20 January 1993 (1993-01-20), pages 358 - 367, XP010067696, ISBN: 0-7803-0867-0
YU Z ET AL: "Epitaxial oxide thin films on Si(001)", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 18, no. 4, July 2000 (2000-07-01), pages 2139 - 2145, XP002172595, ISSN: 0734-211X
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 13 30 November 1999 (1999-11-30)
"INTEGRATION OF GAAS ON SI USING A SPINEL BUFFER LAYER", IBM TECHNICAL DISCLOSURE BULLETIN, IBM CORP. NEW YORK, US, vol. 30, no. 6, November 1987 (1987-11-01), pages 365, XP000952091, ISSN: 0018-8689
YU Z ET AL: "Epitaxial oxide thin films on Si(001)", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 18, no. 4, July 2000 (2000-07-01), pages 2139 - 2145, XP002172595, ISSN: 0734-211X
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 13 30 November 1999 (1999-11-30)
"INTEGRATION OF GAAS ON SI USING A SPINEL BUFFER LAYER", IBM TECHNICAL DISCLOSURE BULLETIN, IBM CORP. NEW YORK, US, vol. 30, no. 6, November 1987 (1987-11-01), pages 365, XP000952091, ISSN: 0018-8689
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