Title:
DIELECTRIC THIN FILM MATERIAL AND VARIABLE CAPACITANCE ELEMENT
Document Type and Number:
WIPO Patent Application WO/2015/015953
Kind Code:
A1
Abstract:
Provided is a dielectric thin film material which has a low dielectric constant that is greatly changed by means of a voltage, and which has a small leakage current. This dielectric thin film material is suitable as a material for a dielectric thin film that is provided in a variable capacitance element.
A dielectric thin film material which is represented by chemical formula YMn1-xMxO3 (wherein M represents Al and/or Ga and x satisfies 0.05 ≤ x ≤ 0.3). This dielectric thin film material is advantageously used as a material that constitutes a dielectric thin film (4) in a variable capacitance element (1) that is provided with the dielectric thin film (4) and at least a pair of electrodes (3, 5) for applying a voltage to the dielectric thin film (4) and obtaining a capacitance value.
Inventors:
HIROSE SAKYO (JP)
Application Number:
PCT/JP2014/066605
Publication Date:
February 05, 2015
Filing Date:
June 24, 2014
Export Citation:
Assignee:
MURATA MANUFACTURING CO (JP)
International Classes:
H01G7/06
Foreign References:
| JPH0517139A | 1993-01-26 | |||
| JP2006003301A | 2006-01-05 |
Other References:
NUGROHO A. A. ET AL.: "Enhancing the magnetoelectric coupling in YMn03 by Ga doping", PHYSICAL REVIEW B CONDENS MATTER MATER PHYS, vol. 75, no. 17, 24 May 2007 (2007-05-24), pages 174435-1 - 1 -174435-5
Attorney, Agent or Firm:
KOSHIBA, MASAAKI (JP)
Masaaki Koshiba (JP)
Masaaki Koshiba (JP)
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