Description

The present invention relates to polymers, comprising a repeating unit of the formula (I), and compounds of formula (II), wherein Y, Y ¹⁵ , Y ¹⁶ and Y ¹⁷ are independently of each

other a group of formula , characterized in that the polymers and compounds comprise silicon-containing solubilizing side chains and their use as organic semiconductor in organic devices, especially in organic photovoltaics (solar cells) and photodi- odes, or in a device containing a diode and/or an organic field effect transistor. The polymers and compounds according to the invention can have excellent solubility in organic solvents and excellent film-forming properties. In addition, high efficiency of energy conversion, excellent field-effect mobility, good on/off current ratios and/or excellent stability can be observed, when the polymers and compounds according to the invention are used in organic field effect transistors, organic photovoltaics and photodiodes.

It is one object of the present invention to provide polymers and small molecules, which show high efficiency of energy conversion, excellent field-effect mobility, good on/off current ratios and/or excellent stability, when used in organic field effect transistors, organic photovoltaics (solar cells) and photodiodes.

Said object has been solved by polymers, comprising a repeating unit of the formula

(I), wherein a is 0, 1 , 2, or 3, a' is 0, 1 , 2, or 3; b is 0, 1 , 2, or 3; b' is 0, 1 , 2, or 3; c is 0, 1 , 2, or 3; c' is 0, 1 , 2, or 3;

R ¹ and R ² may be the same or different and are selected from

a Ci-Ciooalkyl group, which can optionally be substituted one or more times with Ci- Ci2alkyl, Ci-Ci2alkoxy, halogen, C5-Ci2cycloalkyl, nitro, cyano, vinyl, allyl, C6-C2 ₄ aryl, C2- C2oheteroaryl, or E ^Si ; and/or can optionally be interrupted by -O-, -S-, -NR ³⁹ -, -COO-, -CO-, -OCO-, C6-C2 ₄ arylene, C2-C2oheteroarylene, C3-Ci2cycloalkylene, or D ^Si , a C2-Ciooalkenyl group, which can optionally be substituted one or more times with Ci- Ci2alkyl, Ci-Ci2alkoxy, halogen, C5-Ci2cycloalkyl, nitro, cyano, vinyl, allyl, C6-C2 ₄ aryl, C2- C2oheteroaryl, or E ^Si ; and/or can optionally be interrupted by -O-, -S-, -NR ³⁹ -, -COO-, -CO-, -OCO-, C6-C2 ₄ arylene, C2-C2oheteroarylene, C3-Ci2cycloalkylene, or D ^Si ,

a C3-Ciooalkinyl group, which can optionally be substituted one or more times with Ci- Ci2alkyl, Ci-Ci2alkoxy, halogen, C5-Ci2cycloalkyl, nitro, cyano, vinyl, allyl, C6-C2 ₄ aryl, C2- C2oheteroaryl, or E ^Si ; and/or can optionally be interrupted by -O-, -S-, -NR ³⁹ -, -COO-, -CO-, -OCO-, C6-C2 ₄ arylene, C2-C2oheteroarylene, C3-Ci2cycloalkylene, or D ^Si ,

a C3-Ci2cycloalkyl group, which can optionally be substituted one or more times with Ci- Ci2alkyl, Ci-Ci2alkoxy, halogen, C5-Ci2cycloalkyl, nitro, cyano, vinyl, allyl, C6-C2 ₄ aryl, C2- C2oheteroaryl, or E ^Si ; and/or can optionally be interrupted by -O-, -S-, -NR ³⁹ -, -COO-, -CO-, -OCO-, C6-C2 ₄ arylene, C2-C2oheteroarylene, C3-Ci2cycloalkylene, or D ^Si ,

a C6-C2 ₄ aryl group, which can optionally be substituted one or more times with Ci-Ci2alkyl, Ci-Ci2alkoxy, halogen, C5-Ci2cycloalkyl, nitro, cyano, vinyl, allyl, C6-C2 ₄ aryl, C2- C2oheteroaryl, or E ^Si ;

a C2-C2oheteroaryl group, which can optionally be substituted one or more times with Ci- Ci2alkyl, Ci-Ci2alkoxy, halogen, C5-Ci2cycloalkyl, nitro, cyano, vinyl, allyl, C6-C2 ₄ aryl, C2- C2oheteroaryl, or E ^Si ;

-CO-Ci-Ci8alkyl, -CO-C5-Ci2cycloalkyl, -COO-d-dsalkyl which can optionally be substi- tuted one or more times with Ci-Ci2alkyl, Ci-Ci2alkoxy, halogen, C5-Ci2cycloalkyl, nitro, cyano, vinyl, allyl, C6-C2 ₄ aryl, C2-C2oheteroaryl, or E ^Si ; and/or can optionally be interrupted by -O-, -S-, -NR ³⁹ -, -COO-, -CO-, -OCO-, C ₆ -C ₂₄ arylene, C ₂ -C ₂ oheteroarylene, C ₃ - Ci2cycloalkylene, or D ^Si

ESi j _s _S|R161 R162R163 _Qr -O-SlR ⁶ R ⁶² R ¹⁶³ ;

D ^S i j _s _siRi ⁶ i i ⁶ 2__ -SiRi ⁶ i Ri ⁶ 2.(0-SiR ⁶ R ⁶² ) _d - or -0-SiR ⁶ R ¹⁶² -;

R ¹⁶¹ , R ¹⁶² and R ¹⁶³ are independently of each other hydrogen, Ci-C ₂ 5alkyl, C ₃ - Ci2cycloalkyl, which might optionally be substituted with Ci-C ₄ alkyl; d-dshaloalkyl, C2- C ₂₅ alkenyl, -0-SiR ⁶⁴ R ⁶⁵ R ¹⁶⁶ , -(0-SiR ⁶⁴ R ⁶⁵ ) _d -R ¹⁶⁶ , Ci-C ₂₅ alkoxy, C ₃ -C2 ₄ (hetero)aryloxy, N R167R168 halogen, d-dsacyloxy, phenyl, phenyl, which is substituted 1 to 3 times by Ci- C2 ₄ alkyl, halogen, cyano or d-dsalkoxy;

R164 Ri65 _anc | R166 _are independently of each other hydrogen, d-dsalkyl, C ₃ -Ci2cycloalkyl, which might optionally be substituted with Ci-C ₄ alkyl; d-dshaloalkyl, d-dsalkenyl, -O- SiR ¹⁶⁹ R ¹⁷⁰ R ¹⁷¹ , -(O-SiR ⁶⁹ R ⁷⁰ )d-R ¹⁷¹ , Ci-C ₂₅ alkoxy, C ₃ -C2 ₄ (hetero)aryloxy, N R^RIM halogen, d-dsacyloxy, phenyl, phenyl which is substituted 1 to 3 times by Ci-C2 ₄ alkyl, halogen, cyano or d-dsalkoxy;

R169 R170 _anc | R171 _are independently of each other hydrogen, d-dsalkyl, C ₃ - Ci2cycloalkyl, which might optionally be substituted with Ci-C ₄ alkyl; d-dshaloalkyl, C2- C ₂₅ alkenyl, -0-Si(CH ₃ )3, Ci-C ₂₅ alkoxy, C ₃ -C ₂ 4(hetero)aryloxy, NR ⁶⁷ R ¹⁶⁸ , halogen, Ci- C25acyloxy, phenyl, phenyl, which is substituted 1 to 3 times by Ci-C2 ₄ alkyl, halogen, cyano or Ci-C25alkoxy;

R ¹⁶⁷ and R ¹⁶⁸ are independently of each other hydrogen, C6-Cisaryl; C6-Cisaryl which is substituted by C-i-C-isalkyl, or C-i-dsalkoxy; or Ci-C2salkyl, which may optionally be interrupted by one or more oxygen or sulphur atoms; or C7-C2sarylalkyl;

d is an integer from 1 to 50;

R ³⁹ is hydrogen, C-i-C-isalkyl, C-i-dshaloalkyl, d-dsarylalkyl, or d-dsalkanoyl, 

R ³ and R ^3' are independently of each other hydrogen, halogen, E ^Si , halogenated Ci- C25alkyl, cyano, Ci-C2salkyl, which may optionally be interrupted by one or more oxygen or sulphur atoms; C7-C2sarylalkyl, Ci-C2salkyl substituted with one or more E ^Si , or Ci- C25alkoxy;

R ⁴ , R ^4' , R ⁵ , R ^5' , R ⁶ , and R ^6' are independently of each other hydrogen, halogen, E ^Si , halogenated Ci-C25alkyl, cyano, Ci-C2salkyl, which may optionally be interrupted by one or more oxygen or sulphur atoms; C7-C2sarylalkyl, Ci-C2salkyl substituted with one or more E ^Si , or Ci-C25alkoxy;

R ⁷ , R ^7' , R ⁹ and R ^9' are independently of each other hydrogen, Ci-C2salkyl, which may op- tionally be interrupted by one, or more oxygen, or sulphur atoms; Ci-C2salkyl substituted with one or more E ^Si , or C7-C2sarylalkyl, or R ⁷ and R ^7' or R ⁹ and R ^9' are together

= QR104R104'-

R ⁸ and R ^8' are independently of each other hydrogen, C6-Cisaryl; C6-Cisaryl which is substituted by Ci-Ci8alkyl, or Ci-Cisalkoxy; or Ci-C2salkyl, which may optionally be interrupted by one or more oxygen or sulphur atoms; Ci-C2salkyl substituted with one or more E ^Si , or C7-C25arylalkyl,

R ¹¹ and R ^{11 '} are independently of each other Ci-C2salkyl group, C7-C2sarylalkyl, or a phenyl group, which can be substituted one to three times with d-Csalkyl and/or d-Csalkoxy; R ¹² and R ^12' are independently of each other hydrogen, halogen, cyano, Ci-C2salkyl, which may optionally be interrupted by one, or more oxygen, or sulphur atoms, Ci-C2salkoxy,

C7-C25arylalkyl, or ^ , wherein R ¹³ is a Ci-Cioalkyl group, or a tri(Ci-C8alkyl)silyl group; or

Ar ¹ , Ar ^{1 '} Ar ² , Ar ^2' , Ar ³ and Ar ^3' are independently of each other

(XVIIb), and

X ¹ ' is S, O, N R107-, -Si(Ri i7)(Ri i7 ). _i -Ge(R ⁷ )(R ¹¹⁷ ')-, -C(R ⁰⁸ )(R ¹⁰⁹ )-, -C(=0)-,

R ¹⁰⁴ and R ^104' are independently of each other hydrogen, cyano, COOR ¹⁰³ , a Ci-C25alkyl group, or C6-C2 ₄ aryl or C2-C2oheteroaryl;

R ¹⁰³ is Ci-C25alkyl, Ci-C25alkyl, which may optionally be interrupted by one or more oxygen or sulphur atoms; or C7-C2sarylalkyl;

R105 R105' Rio6 _anc | Rio6 _are independently of each other hydrogen, halogen, cyano, Ci- C25alkyl, which may optionally be interrupted by one or more oxygen or sulphur atoms; C7-C25arylalkyl, or Ci-Cisalkoxy,

R ¹⁰⁷ is hydrogen, C7-C2sarylalkyl, C6-Cisaryl; C6-Cisaryl which is substituted by Ci-Cisalkyl, or Ci-Cisalkoxy; Ci-Ci8perfluoroalkyl; Ci-C2salkyl; which may be interrupted by -O-, or -S-; or -COOR ¹⁰³ ; R ¹⁰³ is as defined above;

R ¹⁰⁸ and R ¹⁰⁹ are independently of each other H, Ci-C2salkyl, Ci-C2salkyl which is substitut- ed by E and/or interrupted by D, C7-C2sarylalkyl, C6-C2 ₄ aryl, C6-C2 ₄ aryl which is substituted by G, C2-C2oheteroaryl, C2-C2oheteroaryl which is substituted by G, C2-Cisalkenyl, C2- Ciealkynyl, Ci-Cisalkoxy, Ci-Cisalkoxy which is substituted by E and/or interrupted by D, or C7-C25aralkyl, or

R ¹⁰⁸ and R ¹⁰⁹ together form a group of formula =CR ¹¹⁰ R ¹¹¹ , wherein

R ¹¹⁰ and R ¹¹¹ are independently of each other H, Ci-Cisalkyl, Ci-Cisalkyl which is substituted by E and/or interrupted by D, C6-C2 ₄ aryl, C6-C2 ₄ aryl which is substituted by G, or C2- C2oheteroaryl, or C2-C2oheteroaryl which is substituted by G, or

R ¹⁰⁸ and R ¹⁰⁹ together form a five or six membered ring, which optionally can be substituted by Ci-Cisalkyl, Ci-Cisalkyl which is substituted by E and/or interrupted by D, C6-C2 ₄ aryl, C6- C2 ₄ aryl which is substituted by G, C2-C2oheteroaryl, C2-C2oheteroaryl which is substituted by G, C2-Ci8alkenyl, C2-Cisalkynyl, Ci-Cisalkoxy, Ci-Cisalkoxy which is substituted by E and/or interrupted by D, or C7-C2saralkyl,

D is -CO-, -COO-, -S-, -0-, or -N Ri i2_,

E is Ci-Csthioalkoxy, Ci-C ₈ alkoxy, CN, -N RI ₀ r halogen,

G is E, or Ci-Cisalkyl, and

R ¹¹² and R ¹¹³ are independently of each other H; C6-Cisaryl; C6-Cisaryl which is substituted by Ci-Cisalkyl, or Ci-Cisalkoxy; Ci-Cisalkyl; or Ci-Cisalkyl which is interrupted by -0-, R ¹¹⁴ is Ci-C25alkyl, which may optionally be interrupted by one, or more oxygen, or sulphur atoms,

R ¹¹⁵ and R ^115' are independently of each other hydrogen, halogen, cyano, Ci-C2salkyl, which may optionally be interrupted by one, or more oxygen, or sulphur atoms, Ci-

C25alkoxy, C7-C2sarylalkyl, or , wherein R ¹¹⁶ is a Ci-Cioalkyl group, or a tri(Ci-

Cealkyl)silyl group; R ¹¹⁷ and R ^117' are independently of each other Ci-C25alkyl group, C7-C2sarylalkyl, or a phenyl group, which can be substituted one to three times with d-Csalkyl and/or d-Csalkoxy; R118 R119 R120 _anc | R121 _are independently of each other hydrogen, halogen, halogenated Ci-C25alkyl, cyano, Ci-C2salkyl, which may optionally be interrupted by one or more oxygen or sulphur atoms; C7-C2sarylalkyl, or Ci-C2salkoxy;

R ¹²² and R ^122' are independently of each other hydrogen, C6-Cisaryl; C6-Cisaryl which is substituted by Ci-Cisalkyl, or Ci-Cisalkoxy; or Ci-C2salkyl, which may optionally be interrupted by one or more oxygen or sulphur atoms; or C7-C2sarylalkyl;

with the proviso that at least one of the groups R ¹ , R ² , R ³ , R ^3' , R ⁴ , R ^4' , R ⁵ , R ^5' , R ⁶ , R ^6' , R ⁷ , R ^7' , R ⁸ , R ^8' , R ⁹ and R ^9' contains a group E ^Si and/or D ^Si . a and a' are preferably different from 0.

Advantageously, the polymer of the present invention, or an organic semiconductor materi- al, layer or component, comprising the polymer of the present invention, can be used in organic photovoltaics (solar cells) and photodiodes, or in an organic field effect transistor (OFET).

The polymers of this invention preferably have a weight average molecular weight of 4,000 Daltons or greater, especially 4,000 to 2,000,000 Daltons, more preferably 10,000 to

1 ,000,000 and most preferably 10,000 to 100,000 Daltons. Molecular weights are determined according to high-temperature gel permeation chromatography (HT-GPC) using polystyrene standards. The polymers of this invention preferably have a polydispersity of 1.01 to 10, more preferably 1.1 to 3.0, most preferred 1.5 to 2.5. The polymers of the present invention are preferably conjugated.

The oligomers (small molecules) of the present invention preferably have a weight average molecular weight below 4,000 Daltons. In ula

usually in the range of 4 to 1000, especially 4 to 200, very especially 5 to 150.

R ¹ and R ² may be the same or different and are preferably selected from a Ci-Ciooalkyl group, which can optionally be substituted one or more times with E ^Si , Ci-Ci2alkyl, Ci- Ci2alkoxy, halogen, C5-Ci2cycloalkyl, cyano, C6-C2 ₄ aryl, or C2-C2oheteroaryl; and/or can optionally be interrupted by D ^Si , -0-, -S-, -COO- or -OCO-; a C2-Ciooalkenyl group, which can optionally be substituted one or more times with E ^Si , Ci- Ci2alkyl, Ci-Ci2alkoxy, halogen, C5-Ci2cycloalkyl, cyano, C6-C2 ₄ aryl, or C2-C2oheteroaryl; and/or can optionally be interrupted by D ^Si , -0-, -S-, -COO- or -OCO-;

a C3-Ciooalkinyl group, which can optionally be substituted one or more times with E ^Si , Ci- Ci2alkyl, Ci-Ci2alkoxy, halogen, C5-Ci2cycloalkyl, cyano, C6-C2 ₄ aryl, or C2-C2oheteroaryl; and/or can optionally be interrupted by D ^Si , -0-, -S-, -COO- or -OCO-;

a C ₄ -Ci2cycloalkyl group, which can optionally be substituted one or more times with E ^Si , Ci-Ci2alkyl, Ci-Ci2alkoxy, halogen, C5-Ci2cycloalkyl, cyano, C6-C2 ₄ aryl, or C2- C2oheteroaryl; and/or can optionally be interrupted by D ^Si , -0-, -S-, -COO- or -OCO-;

a C6-C2 ₄ aryl group which can optionally be substituted one or more times with E ^Si , Ci- Ci2alkyl, Ci-Ci2alkoxy, halogen, C5-Ci2cycloalkyl, cyano, C6-C2 ₄ aryl, or C2-C2oheteroaryl; a C2-C2oheteroaryl group, which can optionally be substituted one or more times with E ^Si , Ci-Ci2alkyl, Ci-Ci2alkoxy, halogen, C5-Ci2cycloalkyl, cyano, C6-C2 ₄ aryl, or C2- C ₂ oheteroaryl, -CO-Ci-Ci ₈ alkyl, -CO-C ₅ -Ci ₂ cycloalkyl, and -COO-Ci-Ci ₈ alkyl.

More preferably R ¹ and R ² are selected from d-Csoalkyl, especially Ci-C2salkyl, which is substituted one or more times with E ^Si and/or interrupted one or more times with D ^Si ; Ci- C5ohaloalkyl, especially Ci-C2shaloalkyl, which is substituted one or more times with E ^Si and/or interrupted one or more times with D ^Si ; C7-C2sarylalkyl, which is substituted one or more times with E ^Si and/or interrupted one or more times with D ^Si ; C2-Csoalkenyl, especially C2-C25alkenyl, which is substituted one or more times with E ^Si and/or interrupted one or more times with D ^Si ; C2-Csohaloalkenyl, especially C2-C2shaloalkenyl, which is substituted one or more times with E ^Si and/or interrupted one or more times with D ^Si ; C5-Ci2cycloalkyl; which is substituted one or more times with E ^Si and/or interrupted one or more times with D ^Si ; phenyl, or naphthyl which are substituted one or more times with E ^Si .

Even more preferably R ¹ and R ² are Ci-C2salkyl which is substituted one or more times with E ^Si and/or interrupted one or more times with D ^Si ; especially Ci-C2salkyl which is substituted one or more times with E ^Si , very especially d-Csalkyl which is substituted one or more times with E ^Si .

Most preferably R ¹ and R ² are d-Csalkyl which is substituted with E ^Si . R ¹ and R ² may be different, but are preferably the same. ESi j _s _siRi6iRi62 i63 _{i 0} r -O-SiR ⁶ R ⁶² R ¹⁶³ , preferably -SiR ⁶ R ⁶² R ¹⁶³ .

D ^Si j _s _siR ^{i6i i62} __ -SiR ⁱ⁶ⁱ R ⁱ⁶² -(0-SiR ⁶ R ⁶² ) _d -, or -0-SiR ⁶ R ¹⁶² -, preferably -SiR ⁶ R ¹⁶² -, or -SiR ⁶ R ⁶² -(0-SiR ⁶ R ⁶² ) _d -. R ¹⁶¹ , R ¹⁶² and R ¹⁶³ are independently of each other hydrogen, Ci-C ₂ 5alkyl, C ₃ -

Ci2cycloalkyl, which might optionally be substituted with Ci-C ₄ alkyl; Ci-C2shaloalkyl, C2- C ₂₅ alkenyl, -0-SiR ⁶⁴ R ⁶⁵ R ¹⁶⁶ , -(0-SiR ⁶⁴ R ⁶⁵ ) _d -R ¹⁶⁶ , Ci-C ₂₅ alkoxy, C ₃ -C ₂₄ (hetero)aryloxy, N R167R168 halogen, Ci-C2sacyloxy, phenyl, phenyl, which is substituted 1 to 3 times by Ci- C2 ₄ alkyl, halogen, cyano or Ci-C2salkoxy; preferably hydrogen, Ci-C2salkyl, C3- Ci2cycloalkyl, which might optionally be substituted with Ci-C ₄ alkyl; Ci-C2shaloalkyl, C2- C ₂₅ alkenyl, -0-SiR ⁶⁴ R ⁶⁵ R ¹⁶⁶ , -0-(SiR ⁶⁴ R ⁶⁵ ) _d -R ¹⁶⁶ or phenyl; more preferably Ci-C ₈ alkyl, C5-C6cycloalkyl, which might optionally be substituted with Ci-C4alkyl; Ci-CshaloalkyI, C2- Csalkenyl, -0-SiR ⁶⁴ R ⁶⁵ R ¹⁶⁶ , -(0-SiR ⁶⁴ R ⁶⁵ ) _d -R ¹⁶⁶ or phenyl; most preferably Ci-C ₈ alkyl, Ci-CshaloalkyI, especially Ci-CsalkyI which is substituted one, or more times with fluorine atoms; -0-SiR ⁶ R ⁶⁵ R ¹⁶⁶ or -(0-SiR ⁶ R ⁶⁵ ) _d -R ¹⁶⁶ .

R164 R165 _anc | R166 _are independently of each other hydrogen, Ci-C ₂ salkyl, C ₃ - Ci2cycloalkyl, which might optionally be substituted with Ci-C4alkyl; Ci-C2shaloalkyl, C2- C ₂₅ alkenyl, -O-SiR ⁶⁹ R ⁷⁰ R ¹⁷¹ , -(O-SiR ⁶⁹ R ⁷⁰ ) _d -R ¹⁷¹ , Ci-C ₂₅ alkoxy, C ₃ -C ₂ 4(hetero)aryloxy, NR ¹⁶⁷ R ¹⁶⁸ , halogen, Ci-C2sacyloxy, phenyl, phenyl, which is substituted 1 to 3 times by Ci- C24alkyl, halogen, cyano or Ci-C2salkoxy; preferably hydrogen, Ci-C2salkyl, Ci-C2shaloalkyl, C2-C ₂₅ alkenyl, -O-SiR ⁶⁹ R ⁷⁰ R ¹⁷¹ , -(O-SiR ⁶⁹ R ⁷⁰ ) _d -R ¹⁷¹ , or phenyl; more preferably Ci- Csalkyl, Ci-C ₈ haloalkyl, C ₂ -C ₈ alkenyl, -O-SiR ⁶⁹ R ⁷⁰ R ¹⁷¹ , -(O-SiR ⁶⁹ R ⁷⁰ ) _d -R ¹⁷¹ , or phenyl; most preferably Ci-CsalkyI, Ci-CshaloalkyI, especially Ci-Csalkyl which is substituted one or more times with fluorine atoms; -O-SiR ⁶ R ⁷⁰ R ¹⁷¹ or -(O-SiR ⁶ R ⁷⁰ ) _d -R ¹⁷ .

R169 R170 _ANC | R171 _are independently of each other hydrogen, Ci-C ₂ salkyl, C ₃ - Ci2cycloalkyl, which might optionally be substituted with Ci-C4alkyl, Ci-C2shaloalkyl, C2- C ₂₅ alkenyl, -0-Si(CH ₃ )3, Ci-C ₂₅ alkoxy, C ₃ -C ₂ 4(hetero)aryloxy, NR ⁶⁷ R ¹⁶⁸ , halogen, Ci- C25acyloxy, phenyl, phenyl, which is substituted 1 to 3 times by Ci-C2salkyl, halogen, cyano, or Ci-C25alkoxy; preferably hydrogen, Ci-C2salkyl, Ci-C2shaloalkyl, C2-C2salkenyl, -O- Si(CH3)3, or phenyl; more preferably Ci-Csalkyl, Ci-Cshaloalkyl, C2-Csalkenyl, -0-Si(CH3)3, or phenyl; most preferably Ci-Csalkyl, Ci-Cshaloalkyl, especially Ci-Csalkyl which is substituted one or more times with fluorine atoms; or -0-Si(CH3)3. d is an integer from 1 to 50, especially 1 to 40, very especially 1 to 30, preferably 1 to 20, more preferably 1 to 15, still more preferably 1 to 10, even more preferably 1 to 5 and most preferably 1 to 3. R ¹⁶⁷ and R ¹⁶⁸ are independently of each other hydrogen, Ci-C2salkyl, Ci-C2shaloalkyl, C2- C25alkenyl, or phenyl; preferably Ci-C2salkyl, Ci-C2shaloalkyl, or phenyl; most preferably Ci-C ₂₅ alkyl.

In a particularly preferred embodiment E ^Si is -SiR ⁶ R ⁶² Ri63. Riei _^ RI62 _ANC | RI63 _are de- pendently of each other Ci-C2salkyl, especially Ci-Csalkyl; Ci-C2shaloalkyl, especially Ci- Cshaloalkyl, such as, for example, -CF ₃ , -(CH ₂ )2CF ₃ , -(CH ₂ )2(CF ₂ ) ₅ CF ₃ and - (CH2)2(CF2)6CF ₃ ; C2-C2salkenyl, especially C2-Csalkenyl; C ₃ -Ci2cycloalkyl, especially C5- C6cycloalkyl, which might optionally be substituted with Ci-C4alkyl; phenyl, -O- SiRi ⁶ 4Ri ⁶⁵ Ri ⁶⁶ _i or -(0-SiR ⁶ R ⁶⁵ ) _d -R ¹⁶⁶ . In case of a group -0-SiR ⁶ R ⁶⁵ R ¹⁶⁶ R ¹⁶⁴ , and R ¹⁶⁶ are independently of each other Ci-Csalkyl, Ci-Cshaloalkyl, C2-Csalkenyl, or phenyl. In case of a group -(0-SiR ¹⁶⁴ R ¹⁶⁵ ) _d -R ¹⁶⁶ R ¹⁶⁴ and R ¹⁶⁵ are independently of each other Ci-Csalkyl, R ¹⁶⁶ is Ci-Csalkyl, or phenyl and d is an integer of 2 to 5.

Examples of preferred groups E ^Si are shown below:

(*- indicates the bond to the carbon atom, to which the silyl group or siloxanyl group is connected).

In a particularly preferred embodiment D ^Si is -SiR ¹⁶¹ R ¹⁶² -, wherein R ¹⁶¹ and R ¹⁶² are independently of each other Ci-C25alkyl, especially d-Csalkyl; Ci-C2shaloalkyl, especially Ci- Cshaloalkyl, such as, for example, -CF ₃ , -(CH ₂ )2CF ₃ , -(CH2)2(CF ₂ )5CF ₃ and - (CH2)2(CF2)6CF3 ; C2-C25alkenyl, especially C2-Csalkenyl; or phenyl.

In another particularly preferred embodiment D ^Si is -SiR ¹⁶¹ R ¹⁶² -(0-SiR ¹⁶¹ R ¹⁶² ) _d -, wherein d is 2 to 5 and R ¹⁶¹ and R ¹⁶² are Ci-C ₂₅ alkyl, especially Ci-C ₈ alkyl. Examples of preferred groups D ^Si are shown below:

Preferably at least one of R ¹ and R ² comprise a group E ^Si and/or D ^Si . R ¹ and R ² are prefer- ably the same.

Chiral side chains, such as R ¹ and R ² can either be homochiral, or racemic, which can influence the morphology of the compounds. Preferably Ar ¹ and Ar ^{1 '} are independently of each other a group of formula XIa, Xlb, Xlc, Xle, Xlf, XII, Xlp, XIr, Xls, Xlx, Xllf, Xllg, Xllla, Xllld, or XI III; more preferably a group of formula XIa, Xlb, Xle, Xlf, XIr, Xlx, or Xllla, still more preferably a group of formula XIa, Xlb, or Xlf, most preferred a group of formula XIa, or Xlf, especially XIa.

Preferably, R ³ and R ^3' are independently of each other hydrogen, halogen, E ^Si , CF3, cyano, Ci-C25alkyl, Ci-C2salkyl substituted with one or more E ^Si , or Ci-C2salkoxy; more preferably CF3, cyano or Ci-C2salkyl; most preferred hydrogen, or Ci-C2salkyl.;

Preferably, R ¹⁰⁴ and R ^104' are independently of each other hydrogen, cyano or a Ci-C2salkyl group, more preferably hydrogen, or a Ci-C2salkyl group, most preferred hydrogen.

Preferably, R ⁴ , R ^4' , R ⁵ , R ^5' , R ⁶ and R ^6' are independently of each other hydrogen, halogen, E ^Si , CF3, cyano, Ci-C2salkyl, Ci-C2salkyl substituted with one or more E ^Si , or Ci-C2salkoxy, more preferably hydrogen, CF3, cyano or Ci-C2salkyl; most preferred hydrogen, or Ci- C25alkyl.

Preferably R ⁷ , R ^7' , R ⁹ and R ^9' are independently of each other hydrogen, Ci-C2salkyl, Ci- C25alkyl substituted with one or more E ^Si , more preferably C4-C2salkyl.

Preferably, R ⁸ and R ^8' are independently of each other hydrogen, Ci-C2salkyl, Ci-C2salkyl substituted with one or more E ^Si , Ci-C2salkyl, which may optionally be interrupted by one or more oxygen or sulphur atoms; or C7-C2sarylalkyl, more preferably hydrogen, or Ci- C ₂₅ alkyl.

Preferably, R ¹¹ and R ^{11 '} are independently of each other a Ci-C2salkyl group, especially a C-i-Cealkyl group, or phenyl; more preferably a d-Csalkyl group. Preferably, R ¹² and R ^12' are independently of each other hydrogen, Ci-C2salkyl, Ci-

C25alkoxy, or ^ , wherein R ¹³ is a Ci-Cioalkyl group, or a tri(Ci-Cealkyl)silyl group, more preferably hydrogen, Ci-C2salkyl, or Ci-C2salkoxy.

If Ar ² , Ar ^2' , Ar ³ , Ar ^3' , Ar ⁴ and Ar ^4' are independently of each other a group of formula XVa to XVh, XVI, or XVII, groups of formula XVa, XVb, XVc, XVIa, XVIb, XVIIa, and XVIIb are preferred, groups of formula XVa, XVb, XVc, XVIa, and XVIb are more preferred. Among groups of formula XVa, XVb, XVc, XVIa, and XVIb, groups of formula XVa, and XVb are most preferred. If Ar ² , Ar ^2' , Ar ³ , Ar ^3' , Ar ⁴ and Ar ^4' are independently of each other a group of formula XIa to Xlz, Xlla to Xllk, or XIII , groups of formula XIa, Xlb, Xlc, Xle, Xlf, XII, Xlp, XIr, Xls, Xlx, Xllf, Xllg, Xllla, Xllld, and Xllll are preferred; groups of formula XIa, Xlb, Xle, Xlf, XIr, Xlx, and Xllla are more preferred, and groups of formula XIa, Xlb, and Xlf are still more preferred. Most preferred is a group of formula XIa, or Xlf, especially XIa. Preferably, R ¹⁰⁵ , R ^105' , R ¹⁰⁶ and R ^106' are independently of each other hydrogen, halogen, cyano, Ci-C25alkyl or Ci-Cisalkoxy, more preferably Ci-C2salkyl or Ci-Cisalkoxy, most pref- ered hydrogen, or Ci-C2salkyl. R ¹⁰⁷ is preferably hydrogen, Ci-C2salkyl, Ci-C2salkyl, which may optionally be interrupted by one or more oxygen or sulphur atoms; or C7-C2sarylalkyl, more preferably hydrogen, or Ci- C25alkyl, most preferred C4-C2salkyl.

Preferably, R ⁰⁸ and R ⁰⁹ are independently of each other H, Ci-C ₂ 5alkyl, Ci-C ₂ 5alkyl which is substituted by E and/or interrupted by D, C7-C2sarylalkyl, C2-Cisalkenyl, or C7-C2saralkyl, or R ¹⁰⁸ and R ¹⁰⁹ together form a five or six membered ring, which optionally can be substituted by Ci-Ci8alkyl, Ci-Cisalkyl which is substituted by E and/or interrupted by D, C6- C ₂ 4aryl, C ₆ -C ₂ 4aryl which is substituted by G, D is -CO-, -COO-, -S- or -0-, E is Ci- Cethioalkoxy, Ci-Csalkoxy, CN or halogen, G is E, or Ci-Cisalkyl. More preferably, R ¹⁰⁸ and R ¹⁰⁹ are independently of each other H, Ci-C2salkyl or C ₇ -C25arylalkyl. Most preferred R ¹⁰⁸ and R ¹⁰⁹ are independently of each other H, or Ci-C2salkyl.

D is preferably -CO-, -COO-, -S- or -0-, more preferably -COO-, -S- or -0-, most preferred - S- or -0-.

Preferably, E is d-Csthioalkoxy, d-Csalkoxy, CN, or halogen, more preferably Ci- Cealkoxy, CN, or halogen, most preferred halogen, especially F.

Preferably, R ¹¹² and R ¹¹³ are independently of each other H; C-i-C-isalkyl; or C-i-C-isalkyl which is interrupted by -O-, more preferably H, or Ci-Cisalkyl; most preferred Ci-Cisalkyl.

In a preferred embodiment the present invention is directed to polymers, comprising a repeating unit of the formula

(Γ), wherein

R ¹ and R ² may be the same or different and are selected from Ci-C2salkyl, which is substituted one or more times with E ^Si and/or interrupted one or more times with D ^Si ; Ci- C25haloalkyl, which is substituted one or more times with E ^Si and/or interrupted one or more times with D ^Si ; C7-C2sarylalkyl, which is substituted one or more times with E ^Si and/or interrupted one or more times with D ^Si ; C2-C2salkenyl, which is substituted one or more times with E ^Si and/or interrupted one or more times with D ^Si ; C2-C2shaloalkenyl, which is substituted one or more times with E ^Si and/or interrupted one or more times with D ^Si ; Cs- Ci2cycloalkyl, which is substituted one or more times with E ^Si and/or interrupted one or more times with D ^Si ; phenyl, or naphthyl which are substituted one or more times with E ^Si ; and a is 1 , 2, or 3, a' is 1 , 2, or 3; wherein D ^Si , E ^Si , Ar ¹ and Ar ^1' are as defined above. In said embodiment the following preferences apply with respect to the substituents:

R ¹ and R ² may be the same or different and are selected from Ci-C25alkyl, which is substituted one or more times with E ^Si and/or interrupted one or more times with D ^Si . R ¹ and R ² may be different, but are preferably the same.

D ^Si is preferably -SiR ¹⁶¹ R ¹⁶² -, wherein R ¹⁶¹ and R ¹⁶² are independently of each other Ci- C25alkyl, especially d-Csalkyl; Ci-C2shaloalkyl, especially Ci-Cshaloalkyl, such as, for example, -CF ₃ , -(CH ₂ )2CF ₃ , -(CH ₂ )2(CF2)5CF3 and -(CH2)2(CF2)6CF ₃ ; C2-C ₂₅ alkenyl, especially C2-C8alkenyl; or phenyl.

E ^Si is preferably -SiR ⁶ R ⁶ R ¹⁶³ . R ¹⁶¹ , R ¹⁶² and R ¹⁶³ are independently of each other Ci- C25alkyl, especially d-Csalkyl; Ci-C2shaloalkyl, especially Ci-Cshaloalkyl, such as, for example, -CF ₃ , -(CH ₂ )2CF ₃ , -(CH ₂ )2(CF2) ₅ CF ₃ and -(CH2)2(CF2)6CF ₃ ; C2-C ₂₅ alkenyl, especially C2-C8alkenyl; C ₃ -Ci2cycloalkyl, especially Cs-Cecycloalkyl, which might optionally be substituted with Ci-C ₄ alkyl; phenyl, -0-SiR ⁶⁴ R ⁶⁵ R ¹⁶⁶ , or -(0-SiR ⁶⁴ R ⁶⁵ ) _d -R ¹⁶⁶ . a and a' may be different, but are preferably the same, a and a' are preferably 1 , or 2, more preferably 1.

Ar ¹ and Ar ^{1 '} are preferably selected from groups of formula Xla to Xlz, Xlla to Xllk, XIII, especially Xllla to XI III , and XIV. Ar ¹ and Ar ^{1 '} may be different, but are preferably the same. More preferably, Ar ¹ and Ar ^{1 '} are independently of each a group of formula Xla, Xlb, Xlc, Xle, Xlf, XII, Xlp, Xlr, Xls, Xlx, Xllf, Xllg, Xllla, Xllld, or XI III (as defined above).

Even more preferably, Ar ¹ and Ar ^{1 '} are a group of formula Xla, Xlb, Xle, Xlf, Xlr, Xlx, or Xllla. Still more preferably Ar ¹ and Ar ^{1 '} are a group of formula Xla, Xlb, or Xlf. Most preferred Ar ¹ and Ar ^{1 '} are a group of formula Xla, or Xlf, especially Xla. In a further preferred embodiment the present invention is directed to polymers, comprising a

(la),

(le); wherein

R ¹ and R ² may be the same or different and are selected from Ci-CsalkyI which is substituted with E ^Si ,

E ^Si is -SiR ⁶ R ⁶² R ¹⁶³ ;

R161 R162 and R163 _a re independently of each other Ci-C ₈ alkyl, Cs-Cecycloalkyl, which might optionally be substituted with Ci-C4alkyl; Ci-C ₈ haloalkyl, C2-C ₈ alkenyl, -O- SiR ¹⁶⁴ R ¹⁶⁵ R ¹⁶⁶ , -(0-SiR ⁶⁴ R ⁶⁵ )d-R ¹⁶⁶ , or phenyl;

R ¹⁶⁴ , R165, R166 _ar e independently of each other Ci-C ₈ alkyl, Ci-C ₈ haloalkyl, C ₂ -C ₈ alkenyl, - O-SiR ⁶⁹ R ⁷⁰ R ¹⁷¹ , -(O-SiR ⁶⁹ R ⁷⁰ ) _d -R ¹⁷¹ > or phenyl;

R ¹⁶⁹ , Ri™ R171 are independently of each other Ci-C ₈ alkyl, Ci-C ₈ haloalkyl, C ₂ -C ₈ alkenyl, - 0-Si(CH ₃ )3, or phenyl;

d is an integer from 1 to 10; In said embodiment the following preferences apply with respect to the substituents:

R ³ and R ^3' are independently of each other hydrogen, or Ci-C25alkyl; and

R ⁸ and R ^8' are independently of each other hydrogen, or Ci-C25alkyl.

Repeating) unit(s) of the formula (la), (lb) and (Id) are preferred; repeating unit(s) of the formula (la) and (Id) are more preferred; repeating unit(s) of the formula (la) are most preferred.

In another embodiment the present invention is directed to polymers, comprising repeating

-A- -COM ¹

units of the formula and , wherein

A is a repeating unit of formula (I), and

-COM ¹ - is a repeating unit, which has the meaning of Ar ² , wherein Ar ² is as defined

-Ar ¹ -Ar ¹ -Ar ¹ -Ar ¹

1 , or is a group of formula

s is 1 , t is 1 , u is 0, or 1 , v is 0, or 1 , and

Ar ¹⁴ , Ar ¹⁵ , Ar ¹⁶ and Ar ¹⁷ have independently of each other the meaning of Ar ² .

Ar ¹⁴ , Ar ¹⁵ , Ar ¹⁶ and Ar ¹⁷ are preferably independently of each other a group of formula

wherein one of X ⁵ and X ⁶ is N and the other is CR ¹⁴ , and

R ¹⁴ , R ^14' , R ¹⁷ and R ^17' are independently of each other H, or a Ci-C25alkyl group

Examples of repeating units -COM ¹ - are groups of formula Xla, Xlb, Xlc, Xle, Xlf, XII, Xlp, Xlr, Xls, Xlx, Xllf, Xllg, Xllla, Xllld, XII II, XVa, XVb, XVc, XVIa, XVIb, XVIIa, or XVIIb. Among these groups groups of formula Xla, Xlb, Xle, Xlf, Xlr, Xlx, Xllla, XVa, XVb, XVc, XVIa, or XVIb are preferred, groups of formula Xla, Xlb, Xlf, XVa, or XVb are more preferred, groups of formula Xla, Xlf, or XVa are still more preferred. Groups of formula Xla are most preferred.

If substituents, such as, for example, R ¹⁴ and R ^14' , appear more than one time in a formula they can be the same, or different.

In a particularly preferred embodiment the repeating unit -COM ¹ - is a group of formula

er hydrogen, or Ci-C25alkyl, and R ¹⁰⁴ and R ^104' are independently of each other hydrogen, cyano or a Ci-C25alkyl group.

In a preferred embodiment of the present invention the polymer is a copolymer, comprising

-A- -COM ¹

repeating units of formula (VII), especially a copolymer of formu-

1

-A- -COM ¹

n

la , wherein A and COM ¹ are as defined above; n is a number which results in a molecular weight of 4,000 to 2,000,000 Daltons, more preferably 10,000 to 1 ,000,000 and most preferably 10,000 to 100,000 Daltons. n is usually in the range of 4 to 1000, especially 4 to 200, very especially 5 to 150.

In a preferred embodiment the present invention is directed to polymers, wherein A is a

'-r-COM ¹

repeating unit of formula (la), or (Id), (as defined above) and is a group of

er hydrogen, or Ci-C25alkyl, and R ¹⁰⁴ and R ^104' are independently of each other hydrogen, cyano or a Ci-C2salkyl group. In a preferred embodiment the present invention is directed to copolymers, wherein

is Ar ² -, or -Ar ² — Ar ³ -

-A- e Ar ¹⁵ -; very especially is preferably

Among the polymers of formula I the following polymers are preferred:

(Ia2), 21

(Ia7), wherein

n is 4 to 1000,

R ¹ and R ² may be the same or different and are selected from Ci-CsalkyI which is substituted with E ^Si ,

R ³ and R ^3' are independently of each other hydrogen, halogen, cyano, Ci-C2salkyl or Ci- C25alkoxy;

ESi j _s _S _| R161 R162 163;

R ¹⁶¹ , R ¹⁶² and R ¹⁶³ are independently of each other Ci-C ₈ alkyl, C ₅ -C ₆ cycloalkyl, which might optionally be substituted with Ci-C4alkyl; Ci-C ₈ haloalkyl, C2-C ₈ alkenyl, -O- SiR ⁶⁴ R ⁶⁵ R ¹⁶⁶ , -(0-SiR ⁶⁴ R ¹⁶⁵ )d-R ¹⁶⁶ , or phenyl;

R ¹⁶⁴ , R ¹⁶⁵ and R ¹⁶⁶ are independently of each other Ci-C ₈ alkyl, Ci-C ₈ haloalkyl, C ₂ -

Csalkenyl, -O-SiR ⁶⁹ R ⁷⁰ R ¹⁷¹ , -(O-SiR ⁶⁹ R ⁷⁰ ) _d -R ¹⁷¹ , or phenyl;

R ¹⁶⁹ , R ¹⁷⁰ and R ⁷ are independently of each other Ci-C ₈ alkyl, Ci-C ₈ haloalkyl, C ₂ -

Csalkenyl, -0-Si(CH ₃ )3, or phenyl;

d is an integer from 1 to 10;

R ^3" and R ^3* are independently of each other hydrogen, halogen, cyano, Ci-C2salkyl or Ci-

C25alkoxy;

R ¹⁰⁴ and R ^104' are independently of each other hydrogen, cyano, COOR ¹⁰³ , or Ci-C2salkyl, especially hydrogen, cyano, or COOR ¹⁰³ , wherein R ¹⁰³ is Ci-C ₈ alkyl; and

R ¹⁰⁵ and R ^105' are independently of each other hydrogen, halogen, cyano, Ci-C2salkyl or Ci- C25alkoxy, especially especially hydrogen, cyano, or Ci-C2salkyl.

Examples of particular preferred polymers are shown below:

(P-1 ). 

rein n is usually in the range of 4 to 1000, especially 4 to 200, very especially 5 to 150.

The polymers of the present invention can comprise more than 2 different repeating units, such as, for example, repeating units A, B and D, which are different from each other. If the polymers comprise repeating units of the formula they

are preferably (random) copolymers of formula , wherein x =

0.995 to 0.005, y = 0.005 to 0.995, especially x = 0.2 to 0.8, y = 0.8 to 0.2, and wherein x + y = 1. A is a repeating unit of formula (I), D ^* is a repeating unit -COM ¹ - and B is a repeating unit -COM ¹ -, or a repeating unit of formula (I); with the proviso that A, B and D ^* are different from each other.

Copolymers of formula VII can be obtained, for example, by the Suzuki reaction. The condensation reaction of an aromatic boronate and a halogenide, especially a bromide, commonly referred to as the "Suzuki reaction", is tolerant of the presence of a variety of organic functional groups as reported by N. Miyaura and A. Suzuki in Chemical Reviews, Vol. 95, pp. 457-2483 (1995). Preferred catalysts are 2-dicyclohexylphosphino-2',6'-di- alkoxybiphenyl/palladium(ll)acetates, tri-alykl-phosphonium salts/palladium (0) derivatives and tri-alkylphosphine/palladium (0) derivatives. Especially preferred catalysts are 2- dicyclohexylphosphino-2',6'-di-methoxybiphenyl (sPhos)/palladium(ll)acetate and, tri-tert- butylphosphonium tetrafluoroborate ((t-Bu)3P * HBF4)/tris(dibenzylideneacetone) dipalladi- um (0) (Pd2(dba)3) and tri-tert-butylphosphine (t-Bu)3P/tris(dibenzylideneacetone) dipalladi- um (0) (Pd2(dba)3). This reaction can be applied to preparing high molecular weight polymers and copolymers.

X ¹⁰ _- _A y ¹ ° To prepare polymers corresponding to formula VII a dihalogenide of formula

is reacted with an (equimolar) amount of a diboronic acid or diboronate corresponding to

X -COM^-hX ^{1 1} X ¹⁰ - -COM^-r-X ¹⁰ formula ; or a dihalogenide of formula is reacted with an (equimolar) amount of a diboronic acid or diboronate corresponding to formula

X ¹¹ — A y11

, wherein X ¹⁰ is halogen, especially Br, and X ¹¹ is independently in each oc-

currence -B(OH) ₂ , -B(OY ¹ )2, , wherein Y ¹ is independently in each occurrence a Ci-Cioalkyl group and Y ² is independently in each occurrence a C2- doalkylene group, such as -CY ³ Y ⁴ -CY ⁵ Y ⁶ -, or -CY ⁷ Y ³ -CY ⁹ Y ¹⁰ - CY Y ¹² -, wherein Y ³ , Y ⁴ , Y ⁵ , Y ⁶ , Y ⁷ , Y ⁸ , Y ⁹ , Y ¹⁰ , Y and Y ² are independently of each other hydrogen, or a Ci- Cioalkyl group, especially -C(CH ₃ )2C(CH ₃ )2-, -CH ₂ C(CH ₃ )2CH ₂ -, or -C(CH3)2CH ₂ C(CH ₃ )2-, and Y ¹³ and Y ¹⁴ are independently of each other hydrogen, or a Ci-Cioalkyl group, under the catalytic action of Pd and triphenylphosphine. The reaction is typically conducted at about 0 °C to 180 °C in an aromatic hydrocarbon solvent such as toluene, xylene. Other solvents such as dimethylformamide, dioxane, dimethoxyethan and tetrahydrofuran can also be used alone, or in mixtures with an aromatic hydrocarbon. An aqueous base, prefer- ably sodium carbonate or bicarbonate, potassium phosphate, potassium carbonate or bicarbonate is used as activation agent for the boronic acid, boronate and as the HBr scavenger. A polymerization reaction may take 0.2 to 100 hours. Organic bases, such as, for example, tetraalkylammonium hydroxide, and phase transfer catalysts, such as, for example TBAB, can promote the activity of the boron (see, for example, Leadbeater & Marco; Angew. Chem. Int. Ed. Eng. 42 (2003) 1407 and references cited therein). Other variations of reaction conditions are given by T. I. Wallow and B. M. Novak in J. Org. Chem. 59 (1994) 5034-5037; and M. Remmers, M. Schulze, and G. Wegner in Macromol. Rapid Commun. 17 (1996) 239-252. Controll of molecular weight is possible by using either an excess of dibromide, diboronic acid, or diboronate, or a chain terminator.

According to the process described in WO2010/136352 the polymerisation is carried out in presence of

a) a catalyst/ligand system comprising a palladium catalyst and an organic phosphine or phosphonium compound,

b) a base,

c) a solvent or a mixture of solvents, characterized in that

the organic phosphine is a trisubstituted phosphine of formula

(VI), or phosphonium salt thereof, wherein X" independently of Y" represents a nitrogen atom or a C-R ^2" group and Y" independently of X" represents a nitrogen atom or a C-R ^9" group, R ^1" for each of the two R ^1" groups independently of the other represents a radical selected from the group Ci-C24-alkyl, C3-C2o-cycloalkyl, which includes especially both monocyclic and also bi-and tri-cyclic cycloalkyl radicals, Cs-Cw-aryl, which includes especially the phenyl, naphthyl, fluorenyl radical, C2-Ci3-heteroaryl, wherein the number of hetero atoms, selected from the group N, O, S, may be from 1 to 2, wherein the two radicals R ^1" may also be linked to one another,

and wherein the above-mentioned radicals R ^1" may themselves each be mono-or poly- substituted independently of one another by substituents selected from the group hydrogen, Ci-C2o-alkyl, C2-C2o-alkenyl, Cs-Cs-cycloalkyl, C2-Cg-hetero-alkyl, Cs-C-io-aryl, C2-C9- heteroaryl, wherein the number of hetero atoms from the group N, O, S may be from 1 to 4, Ci-C2o-alkoxy, Ci-Cio-haloalkyl, hydroxy, amino of the forms NH-(Ci-C2o-alkyl), NH-(C5-Cio- aryl), N(Ci-C ₂ o-alkyl) ₂ , N(Ci-C ₂ o-alkyl) (C ₅ -Cio-aryl), N(C ₅ -Cio-aryl) ₂ , N(Ci-C ₂ o-alkyl/C ₅ -Cio- aryl ₃ ) ₃ ⁺ , NH-CO-Ci-C ₂ o-alkyl, NH-CO- Cs-C-io-aryl, carboxylato of the forms COOH and COOQ (wherein Q represents either a monovalent cation or d-Cs-alkyl), Ci-C6-acyloxy, sulfinato, sulfonato of the forms SO3H and SO3Q' (wherein Q' represents either a monovalent cation, Ci-C2o-alkyl, or Cs-C-io-aryl), tri-Ci-C6-alkylsilyl, wherein two of the mentioned substituents may also be bridged with one another, R ^2" -R ^9" represent a hydrogen, alkyl, alkenyl, cycloalkyl, aromatic or heteroaromatic aryl, O-alkyl, NH- alkyl, N-(alkyl)2, O-(aryl), NH-(aryl), N-(alkyl)(aryl), O-CO-alkyl, O-CO-aryl, F, Si(alkyl) ₃ , CF ₃ , CN, C0 ₂ H, COH, SO3H, CONH2, CONH(alkyl), CON(alkyl) ₂ , S0 ₂ (alkyl), SO(alkyl), SO(aryl), S0 ₂ (aryl), SOs(alkyl), SOs(aryl), S-alkyl, S-aryl, NH-CO(alkyl), C0 ₂ (alkyl), CONH ₂ , CO(alkyl), NHCOH,

NHC02(alkyl), CO(aryl), C02(aryl) radical, wherein two or more adjacent radicals, each independently of the other (s), may also be linked to one another so that a condensed ring system is present and wherein in R ^2" to R ^9" alkyl represents a hydrocarbon radical having from 1 to 20 carbon atoms which may in each case be linear or branched, alkenyl represents a mono-or poly- unsaturated hydrocarbon radical having from 2 to 20 carbon atoms which may in each case be linear or branched, cycloalkyi represents a hydrocarbon having from 3 to 20 carbon atoms, aryl represents a 5- to 14-membered aromatic radical, wherein from one to four carbon atoms in the aryl radical may also be replaced by hetero atoms from the group nitrogen, oxygen and sulfur so that a 5- to 14-membered heteroaromatic radical is present, wherein the radicals R ^2" to R ^9" may also carry further substituents as defined for R ^1" .

The organic phosphines and their synthesis are described in WO2004101581.

Preferred organic phosphines are selected from trisubstituted phosphines of formula

¹⁾ R ^5" and R ^6" together form 2) R3" and R ⁴ " together form

Examples of preferred catalysts include the following compounds:

palladium(ll) acetylacetonate, palladium(O) dibenzylidene-acetone complexes, palladium(ll) propionate,

Pd2(dba)3: [tris(dibenzylideneacetone) dipalladium(O)], Pd(dba)2: [bis(dibenzylideneacetone) palladium(O)],

Pd(PR3)2, wherein PR3 is a trisubstituted phosphine of formula VI,

Pd(OAc)2: [palladium(ll) acetate], palladium(ll) chloride, palladium(ll) bromide, lithium tetra- chloropalladate(ll),

PdCl2(PR3)2; wherein PR3 is a trisubstituted phosphine of formula VI; palladium(O) diallyl ether complexes, palladium(ll) nitrate,

PdCI ₂ (PhCN) ₂ : [dichlorobis(benzonitrile) palladium(ll)],

PdCI ₂ (CH ₃ CN): [dichlorobis(acetonitrile) palladium(ll)], and

PdCI ₂ (COD): [dichloro(1 ,5-cyclooctadiene) palladium(ll)].

Especially preferred are PdCI ₂ , Pd ₂ (dba) ₃ , Pd(dba) ₂ , Pd(OAc) ₂ , or Pd(PR ₃ )2. Most preferred are Pd ₂ (dba) ₃ and Pd(OAc) ₂ .

The palladium catalyst is present in the reaction mixture in catalytic amounts. The term "catalytic amount" refers to an amount that is clearly below one equivalent of the (het- ero)aromatic compound(s), preferably 0.001 to 5 mol-%, most preferably 0.001 to 1 mol-%, based on the equivalents of the (hetero)aromatic compound(s) used.

The amount of phosphines or phosphonium salts in the reaction mixture is preferably from 0.001 to 10 mol-%, most preferably 0.01 to 5 mol-%, based on the equivalents of the (het- ero)aromatic compound(s) used. The preferred ratio of Pd:phosphine is 1 :4.

The base can be selected from all aqueous and nonaqueous bases and can be inorganic, or organic. It is preferable that at least 1.5 equivalents of said base per functional boron group is present in the reaction mixture. Suitable bases are, for example, alkali and alkaline earth metal hydroxides, carboxylates, carbonates, fluorides and phosphates such as sodium and potassium hydroxide, acetate, carbonate, fluoride and phosphate or also metal alcoholates. It is also possible to use a mixture of bases. The base is preferably a lithium salt, such as, for example, lithium alkoxides (such as, for example, lithium methoxide and lithium ethoxide), lithium hydroxide, carboxylate, carbonate, fluoride and/or phosphate.

The at present most preferred base is aqueous LiOHxh O (monohydrate of LiOH) and (wa- terfree) LiOH. The reaction is typically conducted at about 0 °C to 180 °C, preferably from 20 to 160°C, more preferably from 40 to 140°C and most preferably from 40 to 120°C. A polymerization reaction may take 0.1 , especially 0.2 to 100 hours.

In a preferred embodiment of the present invention the solvent is THF, the base is Li- ΟΗΉ2Ο and the reaction is conducted at reflux temperature of THF (about 65 °C).

The solvent is for example selected from toluene, xylenes, anisole, THF, 2- methyltetrahydrofuran, dioxane, chlorobenzene, fluorobenzene or solvent mixtures comprising one or more solvents like e.g. THF/toluene and optionally water. Most preferred is THF, or THF/water. Advantageously, the polymerisation is carried out in presence of

a) palladium(ll) acetate, or Pd2(dba)3, (tris(dibenzylideneacetone)dipalladium(O)) and an organic phosphine A-1 to A-13,

b) LiOH, or LiOHxH ₂ 0; and

c) THF, and optionally water. If the monohydrate of LiOH is used, no water needs to be added.

Most preferred the polymerisation is carried out in presence of

a te, or Pd2(dba)3 (tris(dibenzylideneacetone)dipalladium(O)) and

b) LiOHxH ₂ 0; and

c) THF. The palladium catalyst is present in an amount of preferably about 0.5 mol-%, based on the equivalents of the (hetero)aromatic compound(s) used. The amount of phos- phines or phosphonium salts in the reaction mixture is preferably about 2 mol-%, based on the equivalents of the (hetero)aromatic compound(s) used. The preferred ratio of

Pd:phosphine is about 1 :4.

Preferably the polymerization reaction is conducted under inert conditions in the absence of oxygen. Nitrogen and more preferably argon are used as inert gases.

The process described in WO2010/136352 is suitable for large-scale applications, is readily accessible and convert starting materials to the respective polymers in high yield, with high purity and high selectivity. The process can provide polymers having weight average mo- lecular weights of at least 10,000, more preferably at least 20,000, most preferably at least 30,000. The at present most preferred polymers have a weight average molecular weight of 30,000 to 80,000 Daltons. Molecular weights are determined according to high-temperature gel permeation chromatography (HT-GPC) using polystyrene standards. The polymers preferably have a polydispersibility of 1.01 to 10, more preferably 1.1 to 3.0, most preferred 1.5 to 2.5.

If desired, a monofunctional aryl halide or aryl boronate, such as, for example,

It is possible to control the sequencing of the monomeric units in the resulting copolymer by controlling the order and composition of monomer feeds in the Suzuki reaction. The polymers of the present invention can also be sythesized by the Stille coupling (see, for example, Babudri et al, J. Mater. Chem., 2004, 14, 11-34; J. K. Stille, Angew. Chemie

inert solvent at a temperature in range from 0°C to 200°C in the presence of a palladium- containing catalyst, wherein R ²⁰⁷ , R ²⁰⁸ and R ²⁰⁹ are identical or different and are H or Ci- Cealkyl, wherein two groupss optionally form a common ring and these radicals are branched or unbranched. It must be ensured here that the totality of all monomers used has a highly balanced ratio of organotin functions to halogen functions. In addition, it may prove advantageous to remove any excess reactive groups at the end of the reaction by end-capping with monofunctional reagents. In order to carry out the process, the tin compounds and the halogen compounds are preferably introduced into one or more inert organic solvents and stirred at a temperature of from 0 to 200°C, preferably from 30 to 170°C for a period of from 1 hour to 200 hours, preferably from 5 hours to 150 hours. The crude product can be purified by methods known to the person skilled in the art and appropriate for the respective polymer, for example repeated re-precipitation or even by dialysis.

Suitable organic solvents for the process described are, for example, ethers, for example diethyl ether, dimethoxyethane, diethylene glycol dimethyl ether, tetrahydrofuran, dioxane, dioxolane, diisopropyl ether and tert-butyl methyl ether, hydrocarbons, for example hexane, isohexane, heptane, cyclohexane, benzene, toluene and xylene, alcohols, for example methanol, ethanol, 1-propanol, 2-propanol, ethylene glycol, 1-butanol, 2-butanol and tert- butanol, ketones, for example acetone, ethyl methyl ketone and isobutyl methyl ketone, amides, for example dimethylformamide (DM F), dimethylacetamide and N- methylpyrrolidone, nitriles, for example acetonitrile, propionitrile and butyronitrile, and mixtures thereof.

The palladium and phosphine components should be selected analogously to the description for the Suzuki variant.

The Stille coupling reaction is preferred over the Suzuki coupling reaction, if the silyl groups E ^Si or D ^Si might hydrolyze under the Suzuki reaction conditions.

Alternatively, the polymers of the present invention can also be synthesized by the Negishi reaction using a zinc reagent A-(ZnX ¹² )2, wherein X ¹² is halogen and halides, and COM ¹ - (X23) ₂ , wherein X ²³ is halogen or triflate, or using A-(X ² 3) ₂ and COM -(ZnX ² ) ₂ . Reference is, for example, made to E. Negishi et al. , Heterocycles 18 (1982) 1 17-22.

Alternatively, the polymers of the present invention can also be synthesized by the H iyama reaction using a organosilicon reagent A-(SiR ²¹⁰ R ²¹¹ R ^{2 2} ) ₂ , wherein R ²¹⁰ , R ²¹¹ and R ^{2 2} are identical or different and are halogen, or Ci-C6alkyl, and COM ¹ -(X ²³ ) ₂ , wherein X ²³ is halo- gen or triflate, or using A-(X ³ ) ₂ and COM -(SiR ^{2 0} R ² R ^{2 2} ) ₂ . Reference is, for example, made to T. Hiyama et al. , Pure Appl. Chem. 66 (1994) 1471-1478 and T. Hiyama et al. , Synlett (1991) 845-853.

Homopolymers of the type (A) _n can be obtained via Yamamoto coupling of dihalides

X ¹⁰ _- _A y1°

, where X ¹⁰ is halogen, preferably bromide. Alternatively homopolymers of

X ¹⁰ —-A y10 the type (A) _n can be obtained via oxidative polymerization of units , where X ¹⁰ is hydrogen, e.g. with FeC as oxidizing agent.

In case of R ¹ and R ² Ci-C ₂ 5alkyl-SiR ¹⁶¹ R ¹⁶² R ¹⁶³ groups may be obtained by first alkylating the nitrogen atoms of the DPP with a C2-C2siodoalkenyl group and then the addition of an H-Si bond across a double bond by hydrosilation. Advantageously, platinum(l l) compounds such as Karstedt catalyst, platinum chloride olefin complex and [PtCl2(cyclooctadiene)] are used as catalyst. Karstedt catalyst is a compound of platinum(O) and divinyltetramethyldisi- loxane.

The compounds of the formula

intermediates in the production of the polymers of the present invention, are new and form a further subject of the present invention. R ¹ , R ² , a, a', b, b', c, c', Ar ¹ , Ar ^1' , Ar ² , Ar ^2' , Ar ³ and Ar ^3' are as defined above, and X ² and X ^2' are independently of each other halogen, ZnX ¹² , - SnR ⁰⁷ R ⁰⁸ R ²⁰⁹ , wherein R ²⁰⁷ , R ²⁰⁸ and R ²⁰⁹ are identical or different and are H or Ci- CealkyI, wherein two groups optionally form a common ring and these groups are branched

) ₂ CF ₃ , -OS(0) ₂ -aryl, -OS(0) ₂ CH ₃ , -BF ₄ Na, or -BF ₄ K, wherein Y ¹ is inde- pendently in each occurrence a Ci-Cioalkyl group and Y ² is independently in each occurrence a C ₂ -Ci ₀ alkylene group, such as -CY ³ Y ⁴ -CY ⁵ Y ⁶ -, or -CY ⁷ Y ⁸ -CY ⁹ Y ¹⁰ - CY Y ¹² -, wherein Y ³ , Y ⁴ , Ys, γ ^β , Y ⁷ , Y ⁸ , Y ⁹ , γιο, γιι and Y ¹² are independently of each other hydrogen, or a Ci-Cioalkyl group, and Y ¹³ and Y ¹⁴ are independently of each other hydrogen, or a Ci-Cioalkyl group. X ² and X ^2' are preferably the same. With respect to the substituents R ¹ , R ² , a, a', b, b', c, c', Ar ¹ , Ar ^1' , Ar ² , Ar ^2' , Ar ³ and Ar ^3' the same preferences apply as for the compounds of formula I.

Examples of compounds of formula V are shown below:

(Vd); wherein X ² is as defined above. R ¹ and R ² may be the same or different and are preferably selected from d-Csalkyl which is substituted with E ^Si .

R ³ and R ³ ' are independently of each other hydrogen or Ci-C2salkyl.

R ⁸ and R ⁸ ' are independently of each other hydrogen or Ci-C2salkyl, especially Ci-C2salkyl. Among the compounds of formula V the following compounds are preferred:

Halogen is fluorine, chlorine, bromine and iodine.

Ci-Ciooalkyl is preferably Ci-C38alkyl, especially Ci-C25alkyl. Ci-C2salkyl (Ci-Cisalkyl) is typically linear or branched, where possible. Examples are methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl, tert.-butyl, n-pentyl, 2-pentyl, 3-pentyl, 2,2-dimethylpropyl, 1 ,1 ,3,3-tetramethylpentyl, n-hexyl, 1-methylhexyl, 1 ,1 ,3,3,5,5-hexamethylhexyl, n-heptyl, isoheptyl, 1 ,1 ,3,3-tetramethylbutyl, 1-methylheptyl, 3-methylheptyl, n-octyl, 1 ,1 ,3,3- tetramethylbutyl and 2-ethylhexyl, n-nonyl, decyl, undecyl, dodecyl, tridecyl, tetradecyl, pen- tadecyl, hexadecyl, heptadecyl, octadecyl, eicosyl, heneicosyl, docosyl, tetracosyl or penta- cosyl. Ci-Cealkyl is typically methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl, tert.-butyl, n-pentyl, 2-pentyl, 3-pentyl, 2,2-dimethyl-propyl, n-hexyl, n-heptyl, n-octyl, 1 ,1 ,3,3- tetramethylbutyl and 2-ethylhexyl. Ci-C4alkyl is typically methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl, tert.-butyl.

C2-Ciooalkenyl is preferably C2-C2salkenyl. C2-C2salkenyl (C2-Cisalkenyl) groups are straight-chain or branched alkenyl groups, such as e.g. vinyl, allyl, methallyl, isopropenyl, 2- butenyl, 3-butenyl, isobutenyl, n-penta-2,4-dienyl, 3-methyl-but-2-enyl, n-oct-2-enyl, n- dodec-2-enyl, isododecenyl, n-dodec-2-enyl or n-octadec-4-enyl.

C3-Ciooalkinyl is preferably C2-C2salkinyl. C2-2salkinyl (C2-isalkinyl) is straight-chain or branched and preferably C2-salkynyl, which may be unsubstituted or substituted, such as, for example, ethynyl, 1-propyn-3-yl, 1-butyn-4-yl, 1-pentyn-5-yl, 2-methyl-3-butyn-2-yl, 1 ,4-pentadiyn-3-yl, 1 ,3-pentadiyn-5-yl, 1-hexyn-6-yl, cis-3-methyl-2-penten-4-yn-1-yl, trans- 3-methyl-2-penten-4-yn-1-yl, 1 ,3-hexadiyn-5-yl, 1-octyn-8-yl, 1-nonyn-9-yl, 1-decyn-10-yl, or 1-tetracosyn-24-yl.

Aliphatic groups can, in contrast to aliphatic hydrocarbon groups, be substituted by any acyclic substituents, but are preferably unsubstituted. Preferred substituents are

d-Cealkoxy or d-Csalkylthio groups as exemplified further below. The term "aliphatic group" comprises also alkyl groups wherein certain non-adjacent carbon atoms are re- placed by oxygen, like -CH2-O-CH2-CH2-O-CH3. The latter group can be regarded as methyl substituted by -O-CH2-CH2-O-CH3.

An aliphatic hydrocarbon group having up to 25 carbon atoms is a linear or branched alkyl, alkenyl or alkynyl (also spelled alkinyl) group having up to 25 carbon atoms as exemplified above.

Alkylene is bivalent alkyl, i.e. alkyl having two (instead of one) free valencies, e.g. tri- methylene or tetramethylene. Alkenylene is bivalent alkenyl, i.e. alkenyl having two (instead of one) free valencies, e.g. -CH ₂ -CH=CH-CH ₂ -.

Aliphatic groups can, in contrast to aliphatic hydrocarbon groups, be substituted by any acyclic substituents, but are preferably unsubstituted. Preferred substituents are

d-Csalkoxy or d-Csalkylthio groups as exemplified further below. The term "aliphatic group" comprises also alkyl groups wherein certain non-adjacent carbon atoms are replaced by oxygen, like -CH2-O-CH2-CH2-O-CH3. The latter group can be regarded as methyl substituted by -O-CH2-CH2-O-CH3. A cycloaliphatic hydrocarbon group is a cycloalkyl or cycloalkenyl group which may be substituted by one or more aliphatic and/or cycloaliphatic hydrocarbon groups.

A cycloaliphatic-aliphatic group is an aliphatic group substituted by a cycloaliphatic group, wherein the terms "cycloaliphatic" and "aliphatic" have the meanings given herein and wherein the free valency extends from the aliphatic moiety. Hence, a cycloaliphatic- aliphatic group is for example a cycloalkyl-alkyl group.

A "cycloalkenyl group" means an unsaturated alicyclic hydrocarbon group containing one or more double bonds, such as cyclopentenyl, cyclopentadienyl, cyclohexenyl and the like, which may be unsubstituted or substituted by one or more aliphatic and/or cycloaliphatic hydrocarbon groups and/or condensed with phenyl groups.

A bivalent group of the formula IVb wherein R ²⁸ and R ²⁷ together represent alkylene or alkenylene which may be both bonded via oxygen and/or sulfur to the thienyl residue and which may b up of the formula

wherein A ²⁰ represents linear or branched alkylene having up to 25 carbon atoms, preferably ethylene or propylene which may be substituted by one or more alkyl groups, and Y ²⁰ represents oxygen or sulphur. For example, the bivalent group of the formula -Y ²⁰ -A ²⁰ -O- represents -0-CH ₂ -CH ₂ -0- or -0-CH ₂ -CH ₂ -CH ₂ -0- .

A group of the formula IVa wherein two groups R ²² to R ²⁶ which are in the neighborhood of each other, together represent alkylene or alkenylene having up to 8 carbon atoms, thereby of the formula

(XXXII), or (XXXIII), wherein in the group of the formula XXXII R ²³ and

R ²⁴ together represent 1 ,4-butylene and in the group of the formula XXXIII R ²³ and R ²⁴ together represent 1 ,4-but-2-en-ylene. Ci-C ₂ 5alkoxy groups (Ci-Cisalkoxy groups) are straight-chain or branched alkoxy groups, e.g. methoxy, ethoxy, n-propoxy, isopropoxy, n-butoxy, sec-butoxy, tert-butoxy, amyloxy, isoamyloxy or tert-amyloxy, heptyloxy, octyloxy, isooctyloxy, nonyloxy, decyloxy, un- decyloxy, dodecyloxy, tetradecyloxy, pentadecyloxy, hexadecyloxy, heptadecyloxy and octadecyloxy. Examples of d-Csalkoxy are methoxy, ethoxy, n-propoxy, isopropoxy, n-butoxy, sec-butoxy, isobutoxy, tert.-butoxy, n-pentoxy, 2-pentoxy, 3-pentoxy, 2,2- dimethylpropoxy, n-hexoxy, n-heptoxy, n-octoxy, 1 , 1 ,3,3-tetramethylbutoxy and 2- ethylhexoxy, preferably Ci-C4alkoxy such as typically methoxy, ethoxy, n-propoxy, iso- propoxy, n-butoxy, sec.-butoxy, isobutoxy, tert.-butoxy. The term "alkylthio group" means the same groups as the alkoxy groups, except that the oxygen atom of the ether linkage is replaced by a sulfur atom. Ci-Ci8perfluoroalkyl, especially Ci-C4perfluoroalkyl, is a branched or unbranched radical such as for example -CF ₃ , -CF ₂ CF ₃ , -CF ₂ CF ₂ CF ₃ , -CF(CF ₃ ) ₂ , -(CF ₂ ) ₃ CF ₃ , and -C(CF ₃ ) ₃ .

Ci-C ₂ 5haloalkyl means a Ci-C ₂ salkyl group which is substituted with one or more halogen atoms.

The term "carbamoyl group" is typically a Ci-i8carbamoyl radical, preferably d-scarbamoyl radical, which may be unsubstituted or substituted, such as, for example, carbamoyl, methylcarbamoyl, ethylcarbamoyl, n-butylcarbamoyl, tert-butylcarbamoyl, dimethylcar- bamoyloxy, morpholinocarbamoyl or pyrrolidinocarbamoyl.

A cycloalkyl group is typically C ₃ -Ci ₂ cycloalkyl, such as, for example, cyclopentyl, cyclo- hexyl, cycloheptyl, cyclooctyl, cyclononyl, cyclodecyl, cycloundecyl, cyclododecyl, preferably cyclopentyl, cyclohexyl, cycloheptyl, or cyclooctyl, which may be unsubstituted or substituted. The cycloalkyl group, in particular a cyclohexyl group, can be condensed one or two times by phenyl which can be substituted one to three times with Ci-C4-alkyl, halogen and cyano. Examples of such condensed

cyclohexyl groups are or

wherein Risi R152 R153 RIS4

R ¹⁵⁵ and R ¹⁵⁶ are independently of each other Ci-Cs-alkyl, Ci-Cs-alkoxy, halogen and cyano, in particular hydrogen.

A cycloalkyl-alkyl group is an alkyl group substituted by a cycloalkyl group, e.g. cyclohex- yl-methyl.

C6-C ₂ 4aryl (C6-Cisaryl) is typically phenyl, indenyl, azulenyl, naphthyl, biphenyl, as- indacenyl, s-indacenyl, acenaphthylenyl, fluorenyl, phenanthryl, fluoranthenyl, triphenlenyl, chrysenyl, naphthacen, picenyl, perylenyl, pentaphenyl, hexacenyl, pyrenyl, or anthracenyl, preferably phenyl, 1-naphthyl, 2-naphthyl, 4-biphenyl, 9-phenanthryl, 2- or 9-fluorenyl, 3- or 4-biphenyl, which may be unsubstituted or substituted. Examples of C6-Ci2aryl are phenyl, 1-naphthyl, 2-naphthyl, 3- or 4-biphenyl, 2- or 9-fluorenyl or 9-phenanthryl, which may be unsubstituted or substituted. C7-C25aralkyl is typically benzyl, 2-benzyl-2-propyl, β-phenyl-ethyl, α,α-dimethylbenzyl, ω-phenyl-butyl, ro, co-dimethyl-co-phenyl-butyl, o-phenyl-dodecyl, co-phenyl-octadecyl, ω-phenyl-eicosyl or ω-phenyl-docosyl, preferably d-dsaralkyl such as benzyl, 2-benzyl-2- propyl, β-phenyl-ethyl, α,α-dimethylbenzyl, o-phenyl-butyl, co, co-dimethyl-co-phenyl-butyl, co-phenyl-dodecyl or co-phenyl-octadecyl, and particularly preferred C7-Ci2aralkyl such as benzyl, 2-benzyl-2-propyl, β-phenyl-ethyl, α,α-dimethylbenzyl, co-phenyl-butyl, or co, co-dimethyl-co-phenyl-butyl, in which both the aliphatic hydrocarbon group and aromatic hydrocarbon group may be unsubstituted or substituted. Preferred examples are benzyl, 2- phenylethyl, 3-phenylpropyl, naphthylethyl, naphthylmethyl, and cumyl. Heteroaryl is typically C2-C2oheteroaryl, i.e. a ring with five to seven ring atoms or a condensed ring system, wherein nitrogen, oxygen or sulfur are the possible hetero atoms, and is typically an unsaturated heterocyclic group with five to 30 atoms having at least six conjugated π-electrons such as thienyl, benzo[b]thienyl, dibenzo[b,d]thienyl, thianthrenyl, furyl, furfuryl, 2H-pyranyl, benzofuranyl, isobenzofuranyl, dibenzofuranyl, phenoxythienyl, pyrrol- yl, imidazolyl, pyrazolyl, pyridyl, bipyridyl, triazinyl, pyrimidinyl, pyrazinyl, pyridazinyl, in- dolizinyl, isoindolyl, indolyl, indazolyl, purinyl, quinolizinyl, chinolyl, isochinolyl, phthalazinyl, naphthyridinyl, chinoxalinyl, chinazolinyl, cinnolinyl, pteridinyl, carbazolyl, carbolinyl, ben- zotriazolyl, benzoxazolyl, phenanthridinyl, acridinyl, pyrimidinyl, phenanthrolinyl, phenazi- nyl, isothiazolyl, phenothiazinyl, isoxazolyl, furazanyl or phenoxazinyl, which can be unsub- stituted or substituted.

C6-C2 ₄ arylen groups, which optionally can be substituted, are typically phenylene, 4- methylphenylene, 4-methoxyphenylene, naphthylene, especially 1-naphthylene, or 2- naphthylene and biphenylylene.

Preferred C2-C2oheteroarylen groups are pyridylene, triazinylene, pyrimidinylene, carbazol- ylene, dibenzofuranylene which optionally can be substituted.

Examples of C3-Ci2cycloalkylene are cyclopropylene, cyclopentylene, cyclohexylene. Possible substituents of the above-mentioned groups are d-Csalkyl, a hydroxyl group, a mercapto group, d-Csalkoxy, d-Csalkylthio, halogen, halo-d-Csalkyl, a cyano group, a carbamoyl group, a nitro group or a silyl group, especially d-Csalkyl, d-Csalkoxy, d- Cealkylthio, halogen, halo-d-Csalkyl, or a cyano group.

d-dsalkyl interrupted by one or more O is, for example, (CH2CH20)i-9-R ^x , where R ^x is H or d-doalkyl, CH2-CH(OR ^y ')-CH ₂ -0-R ^y , where R ^y is Ci-d ₈ alkyl, and R ^y ' embraces the same definitions as R ^y or is H.

If a substituent, such as, for example R ³ , occurs more than one time in a group, it can be different in each occurrence. A mixture containing a polymer of the present invention results in a semi-conducting layer comprising a polymer of the present invention (typically 5% to 99.9999% by weight, especially 20 to 85 % by weight) and at least another material. The other material can be, but is not restricted to a fraction of the same polymer of the present invention with different molec- ular weight, another polymer of the present invention, a semi-conducting polymer, organic small molecules, carbon nanotubes, a fullerene derivative, inorganic particles (quantum dots, quantum rods, quantum tripods, T1O2, ZnO etc.), conductive particles (Au, Ag etc.), insulator materials like the ones described for the gate dielectric (PET, PS etc.).

The polymers of the present invention can be blended with compounds of formula III ac- cording to the present invention, or small molecules described, for example, in

WO2009/047104, WO2010108873 (PCT/EP2010/053655), WO09/047104, US6,690,029,

WO2007082584, and WO2008107089:

WO2007082584:

42

X ^* is -0-, -S-, -Se- or -NR'"-,

R ^* is cyclic, straight-chain or branched alkyl or alkoxy having 1 to 20 C-atoms, or aryl having 2-30 C-atoms, all of which are optionally fluorinated or perfluorinated,

R' is H, F, CI, Br, I, CN, straight-chain or branched alkyl or alkoxy having 1 to 20 C-atoms and optionally being fluorinated or perfluorinated, optionally fluorinated or perfluorinated aryl having 6 to 30 C-atoms, or CO2R", with R" being H, optionally fluorinated alkyl having 1 to 20 C-atoms, or optionally fluorinated aryl having 2 to 30 C-atoms,

R'" is H or cyclic, straight-chain or branched alkyl with 1 to 10 C-atoms, y is 0, or 1 , x is 0, or 1.

The polymer can contain a small molecule, or a mixture of two, or more small molecule compounds.

Accordingly, the present invention also relates to an organic semiconductor material, layer or component, comprising a polymer according to the present invention.

The polymers of the invention can be used as the semiconductor layer in semiconductor devices. Accordingly, the present invention also relates to semiconductor devices, comprising a polymer of the present invention, or an organic semiconductor material, layer or component. The semiconductor device is especially an organic photovoltaic (PV) device (solar cell), a photodiode, or an organic field effect transistor. The polymers of the invention can be used alone or in combination as the organic semiconductor layer of the semiconductor device. The layer can be provided by any useful means, such as, for example, vapor deposition (for materials with relatively low molecular weight) and printing techniques. The compounds of the invention may be sufficiently solu- ble in organic solvents and can be solution deposited and patterned (for example, by spin coating, dip coating, ink jet printing, gravure printing, flexo printing, offset printing, screen printing, microcontact (wave)-printing, drop or zone casting, or other known techniques).

The polymers of the invention can be used in integrated circuits comprising a plurality of OTFTs, as well as in various electronic articles. Such articles include, for example, radio- frequency identification (RFID) tags, backplanes for flexible displays (for use in, for example, personal computers, cell phones, or handheld devices), smart cards, memory devices, sensors (e.g. light-, image-, bio-, chemo-, mechanical- or temperature sensors), especially photodiodes, or security devices and the like.

A further aspect of the present invention is an organic semiconductor material, layer or component comprising one or more polymers of the present invention. A further aspect is the use of the polymers or materials of the present invention in an organic photovoltaic (PV) device (solar cell), a photodiode, or an organic field effect transistor (OFET). A further as- pect is an organic photovoltaic (PV) device (solar cell), a photodiode, or an organic field effect transistor (OFET) comprising a polymer or material of the present invention.

The polymers of the present invention are typically used as organic semiconductors in form of thin organic layers or films, preferably less than 30 microns thick. Typically the semicon- ducting layer of the present invention is at most 1 micron (=1 μιτι) thick, although it may be thicker if required. For various electronic device applications, the thickness may also be less than about 1 micron thick. For example, for use in an OFET the layer thickness may typically be 100 nm or less. The exact thickness of the layer will depend, for example, upon the requirements of the electronic device in which the layer is used.

For example, the active semiconductor channel between the drain and source in an OFET may comprise a layer of the present invention.

An OFET device according to the present invention preferably comprises:

- a source electrode,

- a drain electrode,

- a gate electrode,

- a semiconducting layer,

- one or more gate insulator layers, and

- optionally a substrate, wherein the semiconductor layer comprises one or more polymers of the present invention.

The gate, source and drain electrodes and the insulating and semiconducting layer in the OFET device may be arranged in any sequence, provided that the source and drain elec- trode are separated from the gate electrode by the insulating layer, the gate electrode and the semiconductor layer both contact the insulating layer, and the source electrode and the drain electrode both contact the semiconducting layer.

Preferably the OFET comprises an insulator having a first side and a second side, a gate electrode located on the first side of the insulator, a layer comprising a polymer of the present invention located on the second side of the insulator, and a drain electrode and a source electrode located on the polymer layer.

The OFET device can be a top gate device or a bottom gate device.

Suitable structures and manufacturing methods of an OFET device are known to the person skilled in the art and are described in the literature, for example in WO03/052841.

The gate insulator layer may comprise for example a fluoropolymer, like e.g. the commer- cially available Cytop 809M®, or Cytop 107M® (from Asahi Glass). Preferably the gate insulator layer is deposited, e.g. by spin-coating, doctor blading, wire bar coating, spray or dip coating or other known methods, from a formulation comprising an insulator material and one or more solvents with one or more fluoro atoms (fluorosolvents), preferably a per- fluorosolvent. A suitable perfluorosolvent is e.g. FC75® (available from Acros, catalogue number 12380). Other suitable fluoropolymers and fluorosolvents are known in prior art, like for example the perfluoropolymers Teflon AF® 1600 or 2400 (from DuPont), or Fluoro- pel® (from Cytonix) or the perfluorosolvent FC 43® (Acros, No. 12377).

The semiconducting layer comprising a polymer of the present invention may additionally comprise at least another material. The other material can be, but is not restricted to another polymer of the present invention, a semi-conducting polymer, a polymeric binder, organic small molecules different from a polymer of the present invention, carbon nanotubes, a fullerene derivative, inorganic particles (quantum dots, quantum rods, quantum tripods, T1O2, ZnO etc.), conductive particles (Au, Ag etc.), and insulator materials like the ones described for the gate dielectric (PET, PS etc.). As stated above, the semiconductive layer can also be composed of a mixture of one or more polymers of the present invention and a polymeric binder. The ratio of the polymers of the present invention to the polymeric binder can vary from 5 to 95 percent. Preferably, the polymeric binder is a semicristalline polymer such as polystyrene (PS), high-density polyethylene (HDPE), polypropylene (PP) and polymethylmethacrylate (PMMA). With this technique, a degradation of the electrical performance can be avoided (cf. WO2008/001 123A1).

The polymers of the present invention are advantageously used in organic photovoltaic (PV) devices (solar cells). Accordingly, the invention provides PV devices comprising a polymer according to the present invention. A device of this construction will also have rectifying properties so may also be termed a photodiode. Photoresponsive devices have application as solar cells which generate electricity from light and as photodetectors which measure or detect light.

The PV device comprise in this order: (a) a cathode (electrode),

(b) optionally a transition layer, such as an alkali halogenide, especially lithium fluoride,

(c) a photoactive layer,

(d) optionally a smoothing layer,

(e) an anode (electrode),

(f) a substrate.

The photoactive layer comprises the polymers of the present invention. Preferably, the photoactive layer is made of a conjugated polymer of the present invention, as an electron do- nor and an acceptor material, like a fullerene, particularly a functionalized fullerene PCBM, as an electron acceptor. As stated above, the photoactive layer may also contain a polymeric binder. The ratio of the polymers of formula I to the polymeric binder can vary from 5 to 95 percent. Preferably, the polymeric binder is a semicristalline polymer such as polystyrene (PS), high-density polyethylene (HDPE), polypropylene (PP) and polymethylmethacry- late (PMMA).

For heteroju notion solar cells the active layer comprises preferably a mixture of a polymer of the present invention and a fullerene, such as [60]PCBM (= 6,6-phenyl-C6i-butyric acid methyl ester), or [70]PCBM, in a weight ratio of 1 :1 to 1 :3. The fullerenes useful in this in- vention may have a broad range of sizes (number of carbon atoms per molecule). The term fullerene as used herein includes various cage-like molecules of pure carbon, including Buckminsterfullerene {Ceo) and the related "spherical" fullerenes as well as carbon nano- tubes. Fullerenes may be selected from those known in the art ranging from, for example, C20-C1000. Preferably, the fullerene is selected from the range of C60 to C96. Most preferably the fullerene is C60 or C70, such as [60]PCBM, or [70]PCBM. It is also permissible to utilize chemically modified fullerenes, provided that the modified fullerene retains acceptor-type and electron mobility characteristics. The acceptor material can also be a material selected from the group consisting of any semi-conducting polymer, such as, for example, a polymer of the present invention, provided that the polymers retain acceptor-type and electron mo- bility characteristics, organic small molecules, carbon nanotubes, inorganic particles (quantum dots, quantum rods, quantum tripods, T1O2, ZnO etc.).

The photoactive layer is made of a polymer of the present invention as an electron donor and a fullerene, particularly functionalized fullerene PCBM, as an electron acceptor. These two components are mixed with a solvent and applied as a solution onto the smoothing layer by, for example, the spin-coating method, the drop casting method, the Langmuir- Blodgett ("LB") method, the ink jet printing method and the dripping method. A squeegee or printing method could also be used to coat larger surfaces with such a photoactive layer. Instead of toluene, which is typical, a dispersion agent such as chlorobenzene is preferably used as a solvent. Among these methods, the vacuum deposition method, the spin-coating method, the ink jet printing method and the casting method are particularly preferred in view of ease of operation and cost.

In the case of forming the layer by using the spin-coating method, the casting method and ink jet printing method, the coating can be carried out using a solution and/or dispersion prepared by dissolving, or dispersing the composition in a concentration of from 0.01 to 90% by weight in an appropriate organic solvent such as benzene, toluene, xylene, tetra- hydrofurane, methyltetrahydrofurane, Ν,Ν-dimethylformamide, acetone, acetonitrile, ani- sole, dichloromethane, dimethylsulfoxide, chlorobenzene, 1 ,2-dichlorobenzene and mix- tures thereof.

The photovoltaic (PV) device can also consist of multiple junction solar cells that are processed on top of each other in order to absorb more of the solar spectrum. Such structures are, for example, described in App. Phys. Let. 90, 143512 (2007), Adv. Funct. Mater. 16, 1897-1903 (2006) and WO2004/112161.

A so called 'tandem solar cell' comprise in this order:

(a) a cathode (electrode),

(b) optionally a transition layer, such as an alkali halogenide, especially lithium fluoride, (c) a photoactive layer,

(d) optionally a smoothing layer,

(e) a middle electrode (such as Au, Al, ZnO, ΤΊΟ2 etc.)

(f) optionally an extra electrode to match the energy level,

(g) optionally a transition layer, such as an alkali halogenide, especially lithium fluoride, (h) a photoactive layer,

(i) optionally a smoothing layer,

G) an anode (electrode),

(k) a substrate. The PV device can also be processed on a fiber as described, for example, in

US20070079867 and US 20060013549.

Due to their excellent self-organising properties the materials or films comprising the polymers of the present invention can also be used alone or together with other materials in or as alignment layers in LCD or OLED devices, as described for example in

US2003/0021913.

It is another object of the present invention to provide compounds, which show high efficiency of energy conversion, excellent field-effect mobility, good on/off current ratios and/or excellent stability, when used in organic field effect transistors, organic photovoltaics (solar cells) and photodiodes.

In a further embodiment the present invention relates to compounds of the formula

15 16

A ^: — Y- -A— Y- -A— Y- _ _A 5_ _Y !L -A'

O P

(III), wherein Y, Yis, γι ^β and Y ¹⁷ are independently of each other a group of formula

o is 0, or 1 , p is 0, or 1 , q is 0, or 1 ;

A ¹ and A ² are independently of each other a group of formula

-Ar ¹ -Ar- -Ar 10

^~~ R A ³ , A ⁴ and A ⁵ are independently of each other a group of formula

-Ar- -Ar- -Ar- -Ar- k is 0, 1 , 2, or 3; I is 1 , 2, or 3; r is 0, 1 , 2, or 3; z is 0, 1 , 2, or 3;

R ¹⁰ is hydrogen, halogen, cyano, Ci-C2salkyl, Ci-C2salkyl which is substituted one or more times by E and/or interrupted one or more times by D, E ^Si , Ci-C2salkyl which is substituted

one or more times by E ^Si and/or interrupted one or more times by D ^Si , , COO-

Ci-Ci8alkyl, C4-Ci8cycloalkyl group, C4-Ci8cycloalkyl group, which is substituted by G, C2- Ciealkenyl, C2-Cisalkynyl, d-dsthioalkoxy, Ci-Cisalkoxy, Ci-Cisalkoxy which is substituted by E and/or interrupted by D, C7-C2saralkyl, C7-C2saralkyl, which is substituted by G, or a group of formulae IVa to IVm,

wherein R ²² to R ²⁶ and R ²⁹ to R ⁵⁸ represent independently of each other H, halogen, cyano, Ci-C25alkyl, Ci-C2salkyl which is substituted by E and/or interrupted by D, C6-C2 ₄ aryl, Ce- C2 ₄ aryl which is substituted by G, C2-C2oheteroaryl, C2-C2oheteroaryl which is substituted by G, a C ₄ -Ci8cycloalkyl group, a C ₄ -Ci8cycloalkyl group, which is substituted by G, C2- Ciealkenyl, C2-Cisalkynyl, Ci-Cisalkoxy, Ci-Cisalkoxy which is substituted by E and/or interrupted by D, C7-C25aralkyl, or C7-C2saralkyl, which is substituted by G,

R ²⁷ and R ²⁸ are independently of each other hydrogen, Ci-C2salkyl, halogen, cyano or C7- C25aralkyl, or R ²⁷ and R ²⁸ together represent alkylene or alkenylene which may be both bonded via oxygen and/or sulfur to the thienyl residue and which may both have up to 25 carbon atoms,

R ⁵⁹ is hydrogen, C6-Cisaryl; C6-Cisaryl which is substituted by Ci-Cisalkyl, or Ci-Cisalkoxy; or Ci-C25alkyl, which may optionally be interrupted by one or more oxygen or sulphur at- oms; or C7-C25arylalkyl,

D is -CO-, -COO-, -S-, -0-, or -NR ^{i i2} -,

E is d-Csthioalkoxy, Ci-C ₈ alkoxy, CN, -NR ^{i i2} R ^{i i3} , -CONR ^{i i2} R ^{i i3} , ₀ r halogen,

G is E, or Ci-Cisalkyl, and

R ¹¹² and R ¹¹³ are independently of each other H; C6-Cisaryl; C6-Cisaryl which is substituted by Ci-Cisalkyl, or Ci-Cisalkoxy; Ci-Cisalkyl; or Ci-Cisalkyl which is interrupted by -0-;

R ¹⁷² is hydrogen, C6-Cisaryl; C6-Cisaryl which is substituted by Ci-Cisalkyl, or Ci-Cisalkoxy; or Ci-C25alkyl, which may optionally be interrupted by one or more oxygen or sulphur atoms; or C7-C25arylalkyl;

R ²¹⁴ and R ²¹⁵ are independently of each other hydrogen, Ci-Cisalkyl, C6-C2 ₄ aryl, C2- C ₂ oheteroaryl, -CN or COOR ^{2 6} ;

R ²¹⁶ is Ci-C25alkyl, Ci-C2shaloalkyl, C7-C2sarylalkyl, C6-C2 ₄ aryl or C2-C2oheteroaryl;

Ar ⁴ , Ar ⁵ , Ar ⁶ and Ar ⁷ have independently of each other the meaning of Ar ¹ , and a, b, c, Ar ¹ ,

Ar ² , Ar ³ , R ¹ and R ² are as defined in claim 1 ;

with the proviso that at least one of the groups R ¹ , R ² , R ³ , R ^3' , R ⁴ , R ^4' , R ⁵ , R ^5' , R ⁶ , R ^6' , R ⁷ , R ^7' , R ⁸ , R ^8' , R ⁹ and R ^9' contains a group E ^Si and/or D ^Si .

Preferably, at least one of the groups R ¹ and R ² contains a group E ^Si and/or D ^Si . More preferred, the groups R ¹ and R ² contain a group E ^Si and/or D ^Si .

Among the compounds of the formula III compounds of formula herein

R ¹ , R2, A ¹ , A ² , A ³ , A ⁴ and A ⁵ are as defined above,

R ^1' , R ^2' , R ^{1 "} , R ^2" , R ^1* and R ^2* have independently of each other the meaning of R ¹ ;

with the proviso that at least one of the groups R ¹ , R ² , R ^1' , R ^2' , R ^" , R ^2' , R ^1* and R ^2* is a Ci- Cealkyl group which is substituted with E ^Si , and

E ^Si is -SiR ⁶ R ⁶² R ¹⁶³ ;

R ¹⁶¹ , R ¹⁶² and R ¹⁶³ are independently of each other Ci-C ₈ alkyl, C ₅ -C ₆ cycloalkyl, which might optionally be substituted with Ci-C4alkyl; Ci-CshaloalkyI, C2-Csalkenyl, -O- SiRi ⁶ 4 i ⁶⁵ i ⁶⁶ _i -(0-SiR ⁶⁴ R ⁶⁵ ) _d -R ¹⁶⁶ , or phenyl;

R ¹⁶⁴ , R ¹⁶⁵ , R ¹⁶⁶ are independently of each other Ci-C ₈ alkyl, Ci-CshaloalkyI, C ₂ -C ₈ alkenyl, - 0-SiR ⁶⁹ R ⁷ °R ¹⁷¹ , -(O-SiR ⁶⁹ R ⁷⁰ )d-R ¹⁷¹ , or phenyl;

R ¹⁶⁹ , R ¹⁷⁰ , R ¹⁷¹ are independently of each other Ci-C ₈ alkyl, Ci-CshaloalkyI, C ₂ -C ₈ alkenyl, - 0-Si(CH ₃ )3, or phenyl; and d is an integer from 1 to 10.

More preferred are compounds of the formula Il ia, 1Mb and lllc, even more preferred are compounds of the formula Il ia and 1Mb, and most preferred are compounds of the formula Ilia. Preferably at least one of R ¹ , R ² , R ^{1 '} , R ^2' , R ^1" R ^2" , R ^1* , R ^2* comprise a group E ^Si and/or D ^Si .

More preferably R ¹ and R ² are the same, R ^{1 '} and R ^2' are the same, R ^1" and R ^2" are the same, R ^* and R ^2* are the same, wherein R ¹ , R ² , R ^{1 '} , R ^2' , R ^1" R ^{2 '} , R ^1* and R ^2* contain a group E ^Si and/or D ^Si .

Compounds of the formula Γ) are more pre- ferred, R ¹ and R ² are selected from d-Csoalkyl, especially d-dsalkyl, which is substituted one or more times with E ^Si and/or interrupted one or more times with D ^Si ; d-dohaloalkyl, especially Ci-C25haloalkylalkyl, which is substituted one or more times with E ^Si and/or interrupted one or more times with D ^Si ; d-dsarylalkyl, which is substituted one or more times with E ^Si and/or interrupted one or more times with D ^Si ; d-doalkenyl, especially d-dsalkenyl, which is substituted one or more times with E ^Si and/or interrupted one or more times with D ^Si ; C2-C5oalkinyl, especially d-dsalkinyl, which is substituted one or more times with E ^Si and/or interrupted one or more times with D ^Si ; d-dohaloalkenyl, especially haloalkenyl, which is substituted one or more times with E ^Si and/or interrupted one or more times with D ^Si ; C5-Ci2cycloalkyl; which is substituted one or more times with E ^Si and/or interrupted one or more times with D ^Si ; phenyl, or naphthyl which are substituted one or more times with E ^Si . a is 1 , 2, or 3, a' is 1 , 2, or 3; wherein R ¹⁰ , D ^Si , E ^Si , Ar and Ar ^' are as defined above. R ^10' has the meaning of R ¹⁰ .

More preferred. R ¹ and R ² are d-dsalkyl which is substituted one or more times with E ^Si and/or interrupted one or more times with D ^Si ; especially d-dsalkyl which is substituted one or more times with E ^Si , very especially d-Csalkyl which is substituted one or more times with E ^Si .

Even more preferred, R ¹ and R ² are selected from d-dsalkyl, which is substituted one or more times with E ^Si and/or interrupted one or more times with D ^Si .

Most preferably R ¹ and R ² are d-Csalkyl which is substituted with E ^Si . R ¹ and R ² may be different, but are preferably the same. Ar ¹ and Ar ^{1 '} may be different, but are preferably the same. Preferably, Ar ¹ and Ar ^1' are independently of each a group of formula XIa, Xlb, Xlc, Xle, Xlf, XII, XIp, XIr, Xls, Xlx, Xllf, Xllg, Xllla, Xllld, or XIIII. More preferably, Ar ¹ and Ar ^' are a group of formula XIa, Xlb, Xle, Xlf, XIr, Xlx, or Xllla. Still more preferably Ar ¹ and Ar ^1' are a group of formula XIa, Xlb, or Xlf. Most preferred Ar ¹ and Ar ^1' are a group of formula XIa, or Xlf, especially XIa.

(llla-2), 53

are more preferred, wherein R ¹⁰ and R ^10' are as defined above,

R ¹ and R ² may be the same or different and are selected from Ci-C25alkyl, which is substituted one or more times with E ^Si and/or interrupted one or more times with D ^Si ;

R ³ and R ^3' are independently of each other hydrogen, halogen, cyano or Ci-C2salkyl, espe- cially hydrogen or Ci-C2salkyl;

R ⁷ and R ^7' are independently of each other hydrogen, Ci-C2salkyl, Ci-C2salkyl substituted with one or more E ^Si , more preferably C4-C2salkyl;

R ⁸ and R ^8' are independently of each other hydrogen, Ci-C2salkyl, Ci-C2salkyl substituted with one or more E ^Si , Ci-C2salkyl, which may optionally be interrupted by one or more oxy- gen or sulphur atoms; more preferably hydrogen, or Ci-C2salkyl; and

R ¹² and R ^12' are independently of each other hydrogen, halogen, cyano, Ci-C2salkyl, which may optionally be interrupted by one, or more oxygen, or sulphur atoms, Ci-C2salkoxy,

C7-C25arylalkyl, or ^ , wherein R ¹³ is a Ci-Cioalkyl group, or a tri(Ci-C8alkyl)silyl group. R ^' are preferably H, F, trifluoromethyl, cyano, Ci-C2salkyl, a group of formula , wherein R ²⁴ to R ²⁶ are as defined above and are preferably H, or Ci-C2salkyl, more preferably H. Among compounds of formula (llla-1 ) to (llla-14) compounds are more preferred, wherein R ¹ and R ² may be the same or different and are selected from Ci-C2salkyl, which is substituted one or more times with E ^Si and/or interrupted one or more times with D ^Si ;

R ³ and R ^3' are hydrogen or Ci-C2salkyl;

R ⁷ and R ^7' are C ₄ -C ₂ 5alkyl;

R ⁸ and R ^8' are hydrogen, or Ci-C ₂ 5alkyl;

' are preferably H, F, trifluoromethyl, cyano, Ci-C2salkyl, a group of formula

wherein R ¹³ is a Ci-Cioalkyl group, or a tri(Ci-Csalkyl)silyl group.

Examples of specific compounds are shown below:



\ /

Si—

(B-7),

(B-15), 62

In another preferred embodiment the present invention is directed to compounds of formula (lllb),wherein R ¹ , R ² , A ¹ , A ² and A ³ are as defined above. R ^{1 '} and R ^2' have independently of each other the meaning of R ¹ .

R ¹ and R ² may be the same or different and are preferably selected from Ci-C25alkyl, which is substituted one or more times with E ^Si and/or interrupted one or more times with D ^Si . R ^1' and R ^2' may be the same or different and are preferably selected from Ci-C25alkyl, which is substituted one or more times with E ^Si and/or interrupted one or more times with □si.

Compounds of the formula (lllb) ( A ³ is a group of

-Ar- -Ar- -Ar- -Ar- formula , ⁴ is Ar ⁷ , k is 1 , or 2, z is 1 , or 2) may be

prepared by reacting a compound of formula with a compound

16'

X -Ar- -Ar- -X

of formula wherein X ⁱ e ^' is -B(OH) ₂ , -B(OH) ₃ -, -BF ₃ , -B(OY ) ₂ , , or and X ¹⁶ is halogen, such as, for example, Br, or I.

The Suzuki reaction is typically conducted at about 0 °C to 180 °C in an aromatic hydrocarbon solvent such as toluene, xylene. Other solvents such as dimethylformamide, dioxane, dimethoxyethan and tetrahydrofuran can also be used alone, or in mixtures with an aro- matic hydrocarbon. An aqueous base, preferably sodium carbonate or bicarbonate, potassium phosphate, potassium carbonate or bicarbonate is used as activation agent for the boronic acid, boronate and as the HBr scavenger. A condensation reaction may take 0.2 to 100 hours. Organic bases, such as, for example, tetraalkylammonium hydroxide, and phase transfer catalysts, such as, for example TBAB, can promote the activity of the boron (see, for example, Leadbeater & Marco; Angew. Chem. Int. Ed. Eng. 42 (2003) 1407 and references cited therein). Other variations of reaction conditions are given by T. I . Wallow and B. M. Novak in J. Org. Chem. 59 (1994) 5034-5037; and M. Remmers, M. Schulze, and G. Wegner in Macromol. Rapid Commun. 17 (1996) 239-252.

In the above Suzuki coupling reactions the halogen X ¹⁶ on the halogenated reaction partner can be replaced with the X ^16' moiety and at the same time the X ^16' moiety of the other reaction partner is replaced by X ¹⁶ . In an additional embodiment the present invention is directed to compounds of formula

16

A ^r — Y A— Y— -A— Y ¹ _ _Y !Z_ -A'

P

(XX), wherein

A ^{1 "} and A ^2" are independently of each other a group of formula

-Ar -Ar- -Ar

J b

X ³ is independently in each occurrence ZnX ² , -SnR ⁰⁷ R ⁰⁸ R ²⁰⁹ , wherein R ²⁰⁷ , R ²⁰⁸ and R ²⁰⁹ are identical or different and are H or Ci-C6alkyl, wherein two groups optionally form a common ring and these groups are branched or unbranched and X ¹² is a halogen atom, very especially I, or Br; -OS(0)2CF3, -OS(0)2-aryl, especially

OS(0) ₂ CH ₃ , -B(OH) ₂ , -B(OH) ₃ -, -BF ₃ , -B(OY ) ₂ , wherein Y ¹ is independently in each occurrence a Ci-Ci2alkyl group and Y ² is independently in each occurrence a C ₂ -Ci ₀ alkylene group, such as -CY ³ Y ⁴ -CY ⁵ Y ⁶ -, or -CY ⁷ Y ⁸ -CY ⁹ Y ¹⁰ - CY Y ¹² -, wherein Y ³ , Y ⁴ , Y ⁵ , Y ⁶ , Y ⁷ , Y ⁸ , Y ⁹ , Y ¹⁰ , Y ¹¹ and Y ² are independently of each other hydrogen, or a Ci-Ci ₂ alkyl group, especially -C(CH ₃ )2C(CH ₃ )2-, or -C(CH ₃ ) ₂ CH ₂ C(CH ₃ ) ₂ -, -CH2C(CH ₃ )2 CH2-, and Y ¹³ and Y ¹⁴ are independently of each other hydrogen, or a Ci- Ci ₂ alkyl group; a, b, c, p, q, Ar ¹ , Ar ² , Ar ³ , Y, Y ¹⁵ , Y ¹⁶ , Y ¹⁷ , A ³ , A ⁴ and A ⁵ are as defined above. f formula XX is preferably a compound of formula -Y- -A- -Y^A ^2"

The compound o

(XXa). The compounds of the formula XX, especially XXa are intermediates in the production of polymers.

Accordingly, the present invention is also directed to polymers comprising repeating units of formula

16

-A— Y- _ _Y !L -Α—Ύ- -A ⁵ -Yl7_ -A-

P

(X), wherein

1 ^' and A ^2' are independe of each other a group of formula Ar ² , Ar ³ , Y, Y ⁱ s, γι ^β , A ³ , A ⁴ and A ⁵ are as defined above. The polymers of the present invention may be used in the production of semiconductor devices. Accordingly, the present invention is also directed to semiconductor devices comprising a polymer of the present invention.

Advantageously, the compound of formula III, or an organic semiconductor material, layer or component, comprising the compound of formula III can be used in organic photovoltaics (solar cells) and photodiodes, or in an organic field effect transistor (OFET). A mixture containing the compound of formula III results in a semi-conducting layer comprising the compound of formula III (typically 0.1 % to 99.9999% by weight, more specifically 1 % to 99.9999% by weight, even more specifically 5% to 99.9999% by weight, especially 20 to 85 % by weight) and at least another material. The other material can be, but is not restrict- ed to another compound of formula III, a polymer of the present invention, a semiconducting polymer, a non-conductive polymer, organic small molecules, carbon nanotubes, a fullerene derivative, inorganic particles (quantum dots, quantum rods, quantum tripods, ΤΊΟ2, ZnO etc.), conductive particles (Au, Ag etc.), insulator materials like the ones described for the gate dielectric (PET, PS etc.).

Accordingly, the present invention also relates to an organic semiconductor material, layer or component, comprising a compound of formula III and to a semiconductor device, comprising a compound of formula III and/or an organic semiconductor material, layer or component.

The semiconductor is preferably an organic photovoltaic (PV) device (solar cell), a photodi- ode, or an organic field effect transistor. The structure and the components of the OFET device has been described in more detail above. Accordingly, the invention provides organic photovoltaic (PV) devices (solar cells) comprising a compound of the formula III.

The structure of organic photovoltaic devices (solar cells) is, for example, described in C. Deibel et al. Rep. Prog. Phys. 73 (2010) 096401 and Christoph Brabec, Energy Environ. Sci 2. (2009) 347-303.

The PV device comprise in this order:

(a) a cathode (electrode),

(b) optionally a transition layer, such as an alkali halogenide, especially lithium fluoride, (c) a photoactive layer,

(d) optionally a smoothing layer,

(e) an anode (electrode),

(f) a substrate. The photoactive layer comprises the compounds of the formula III. Preferably, the photoactive layer is made of a compound of the formula III, as an electron donor and an acceptor material, like a fullerene, particularly a functionalized fullerene PCBM, as an electron acceptor. As stated above, the photoactive layer may also contain a polymeric binder. The ratio of the small molecules of formula III to the polymeric binder can vary from 5 to 95 per- cent. Preferably, the polymeric binder is a semicristalline polymer such as polystyrene (PS), high-density polyethylene (HDPE), polypropylene (PP) and polymethylmethacrylate

(PMMA).

The fullerenes useful in this invention may have a broad range of sizes (number of carbon atoms per molecule). The term fullerene as used herein includes various cage-like mole- cules of pure carbon, including Buckminsterfullerene {Ceo) and the related "spherical" full- erenes as well as carbon nanotubes. Fullerenes may be selected from those known in the art ranging from, for example, C20-C1000. Preferably, the fullerene is selected from the range of Ceo to C ₉ 6. Most preferably the fullerene is Ceo or C70, such as [60JPCBM, or [70JPCBM. It is also permissible to utilize chemically modified fullerenes, provided that the modified fullerene retains acceptor-type and electron mobility characteristics. The acceptor material can also be a material selected from the group consisting of another compounds of formula III, or any semi-conducting polymer, such as, for example, a polymer of formula I, provided that the polymers retain acceptor-type and electron mobility characteristics, organic small molecules, carbon nanotubes, inorganic particles (quantum dots, quantum rods, quantum tripods, ΤΊΟ2, ZnO etc.).

The photoactive layer is made of a compound of the formula III, as an electron donor and a fullerene, particularly functionalized fullerene PCBM, as an electron acceptor. These two components are mixed with a solvent and applied as a solution onto the smoothing layer by, for example, the spin-coating method, the drop casting method, the Langmuir-Blodgett ("LB") method, the ink jet printing method and the dripping method. A squeegee or printing method could also be used to coat larger surfaces with such a photoactive layer. Instead of toluene, which is typical, a dispersion agent such as chlorobenzene is preferably used as a solvent. Among these methods, the vacuum deposition method, the spin-coating method, the ink jet printing method and the casting method are particularly preferred in view of ease of operation and cost.

In the case of forming the layer by using the spin-coating method, the casting method and ink jet printing method, the coating can be carried out using a solution and/or dispersion prepared by dissolving, or dispersing the composition in a concentration of from 0.01 to 90% by weight in an appropriate organic solvent such as benzene, toluene, xylene, tetra- hydrofurane, methyltetrahydrofurane, Ν,Ν-dimethylformamide, acetone, acetonitrile, ani- sole, dichloromethane, dimethylsulfoxide, chlorobenzene, 1 ,2-dichlorobenzene and mix- tures thereof.

The photovoltaic (PV) device can also consist of multiple junction solar cells that are processed on top of each other in order to absorb more of the solar spectrum. Such structures are, for example, described in App. Phys. Let. 90, 143512 (2007), Adv. Funct. Mater. 16, 1897-1903 (2006) and WO2004/1 12161.

A so called 'tandem solar cell' comprise in this order:

(a) a cathode (electrode),

(b) optionally a transition layer, such as an alkali halogenide, especially lithium fluoride, (c) a photoactive layer,

(d) optionally a smoothing layer,

(e) a middle electrode (such as Au, Al, ZnO, T1O2 etc.)

(f) optionally an extra electrode to match the energy level,

(g) optionally a transition layer, such as an alkali halogenide, especially lithium fluoride, (h) a photoactive layer, (i) optionally a smoothing layer,

G) an anode (electrode),

(k) a substrate. The PV device can also be processed on a fiber as described, for example, in

US20070079867 and US 20060013549.

Due to their excellent self-organising properties the materials or films comprising the compounds of the formula III can also be used alone or together with other materials in or as alignment layers in LCD or OLED devices, as described for example in US2003/0021913.

An OFET device according to the present invention preferably comprises:

- a source electrode,

- a drain electrode,

- a gate electrode,

- a semiconducting layer,

- one or more gate insulator layers, and

- optionally a substrate, wherein the semiconductor layer comprises a compound of formula III.

The gate, source and drain electrodes and the insulating and semiconducting layer in the OFET device may be arranged in any sequence, provided that the source and drain electrode are separated from the gate electrode by the insulating layer, the gate electrode and the semiconductor layer both contact the insulating layer, and the source electrode and the drain electrode both contact the semiconducting layer.

Preferably the OFET comprises an insulator having a first side and a second side, a gate electrode located on the first side of the insulator, a layer comprising a compound of formula III located on the second side of the insulator, and a drain electrode and a source elec- trode located on the polymer layer.

The following examples are included for illustrative purposes only and do not limit the scope of the claims. Unless otherwise stated, all parts and percentages are by weight. Weight-average molecular weight (Mw) and polydispersity (Mw/Mn = PD) are determined by Heat Temperature Gel Permeation Chromatography (HT-GPC) [Apparatus: GPC PL 220 from Polymer laboratories (Church Stretton, UK; now Varian) yielding the responses from refractive index (Rl), Chromatographic conditions: Column: 3 "PLgel Olexis" column from Polymer Laboratories (Church Stretton, UK); with an average particle size of 13 im (dimensions 300 x 8 mm I.D.) Mobile phase: 1 ,2,4-trichlorobenzene purified by vacuum distillation and stabilised by butylhydroxytoluene (BHT, 200 mg/l), Chromatographic temperature: 150°C; Mobile phase flow: 1 ml/min; Solute concentration: about 1 mg/ml; Injection volume: 200 II; Detection: Rl, Procedure of molecular weight calibration: Relative calibration is done by use of a set of 10 polystyrene calibration standards obtained from Polymer Laboratories (Church Stretton, UK) spanning the molecular weight range from 1 '930'000 Da - 5Ό50 Da, i. e., PS 1 '930'000, PS 1 '460'000, PS 1 Ό75Ό00, PS 560Ό00, PS 330Ό00, PS 96Ό00, PS 52Ό00, PS 30'300, PS 10Ί00, PS 5Ό50 Da. A polynomic calibration is used to calculate the molecular weight.

All polymer structures given in the examples below are idealized representations of the polymer products obtained via the polymerization procedures described. If more than two components are copolymerized with each other sequences in the polymers can be either alternating or random depending on the polymerisation conditions.

Examples

Exam

a)

10g of compound 1 [850583-75-4] and 18.43g of potassium carbonate are dispersed in 100ml of dry dimethylformamide. The mixture is heated to 100°C for two hours and then 17.76g of compound 2 [18135-48-3] are added and the reaction mixture is stirred for another hour at 100°C. The reaction mixture is cooled to room temperature and then poured on water. The product is extracted with chloroform. The organic phase is dried over MgSC and the solvent is evaporated. The product is purified over silica gel by chromatography to give compound 3. ¹ H-NMR data (ppm, CDCb): 8.96 2H d, 7.65 2H d, 7.31 2H dxd, 4.07 4H t, 1.81-1.70 4H m, 0.62 4H m, 0.01 18H s. 12g of compound 3 and 7.99g of N-bromo- succinimide (NBS) are added to 240ml of chloroform. The mixture is cooled to -15°C and then 0.074g of 60% perchloric acid in water are added and the reaction mixture is stirred for 40 minutes at -15°C. Then the chloroform solution is washed with water, dried over MgSC and then the solvent is evaporated. The product is recrystallized from dichloromethane and then from isopropanol to give a compound of formula 4. ¹ H-NMR data (ppm, CDCb): 8.69 2H d, 7.24 2H d, 3.97 4H t, 1.76-1.65 4H m, 0.60 4H m, 0.01 18H s.

b) 1g of compound 4, 0.89g of compound 5 [479719-88-5], 0.8mg of Pd(ll)acetate and 4.9mg of 2-(di-tert-butylphosphine)-1-phenylindole are added into a reactor under Argon. Then 12ml of degassed tetrahydrofuran are added under argon and the mixture is heated to 60°C. Then 367mg of lithiumhydroxide-monohydrate are added and the reaction mixture is heated for two hours under reflux. The mixture is poured on methanol and is filtered. The filter cake is then purified by chromatography over silica gel to give a compound of formula 6. 1 H-NMR data (ppm, CDCb): 8.97 2H d, 7.32 2H d, 7.28-7.22 6H m, 7.14 2H d, 7.06 2H dxd, 4.09 4H t, 1.88-1.72 4H m, 0.66 4H m, 0.03 18H s.

Example 2: Synthesis of compound 11 (1-1)

8 9 a) 5g of compound 1 [850583-75-4] and 7.04g of potassium carbonate are dispersed in 50ml of dry dimethylformamide. The mixture is heated to 65°C and then 6.04g of allylbro- mide 7 [106-95-6] are added and the reaction mixture is stirred over night at 65°C. The reaction mixture is cooled to room temperature and then poured on water. The product is extracted with dichloromethane. The organic phase is dried over MgSCu and the solvent is evaporated. The product is purified by recrystallization to give a compound of formula 8. 1 H-NMR data (ppm, CDCb): 8.80 2H d, 7.65 2H d, 7.27 2H dxd, 6.07-5.98 2H m, 5.25 2H s, 5.21 2H d, 4.77-4.75 4H m. Compound 8 and two equivalents of N-bromo-succinimide (NBS) are added to chloroform. The mixture is cooled to -15°C and then a drop of 60% perchloric acid in water is added and the reaction mixture is stirred for 2 hours at -15°C. Then the chloroform solution is washed with water, dried over MgS04 and then the solvent is evaporated. The product is purified by recrystallization to give a compound of formula 9.

b) Compound 9 and two equivalents of 1 , 1 ,1 ,3,5,5,5-heptamethyltrisiloxane 10 are added to toluene. Then Karstedt catalyst is added and the mixture is stirred at 50°C. The solvent is evaporated under reduced pressure and the product is purified by chromatography over silica gel to give a compound of formula 11 .

Alternatively compound 11 can be obtained from compound 12 by bromination with NBS.

Example 3: Synthesis of compound 12 (B-3)

Compound 8 and two equivalents of 1 , 1 ,1 ,3,5,5,5-heptamethyltrisiloxane 10 are added to toluene. Then Karstedt catalyst (compound of platinum(O) and divinyltetramethyldisiloxane) is added and the mixture is stirred at 50°C. The solvent is evaporated under reduced pressure and the product is purified by chromatography over silica gel to give a compound of formula 12. ¹ H-NMR data (ppm, CDC ): 8.92 2H d, 7.62 2H d, 7.28 2H dxd, 4.06 4H t, 1.77 4H txt, 0.59 4H t, 0.07 36H s, 0.05 6H s.

Example 4: Synthesis of compound 16 (I-6)

14 15 a) Compound 15 is synthesized in analogy to compound 9.

b) Compound 16 is synthesized in analogy to compound 11 . Alternatively compound 16 can be obtained from compound 17 by bromination with NBS.

Example 5: Synthesis of compound 17 (B-5)

Polymer 19 is obtained by reaction of compound 16 with one equivalent of compound 18

[145483-63-2] under Stille coupling reaction conditions.

Example 7: Synthesis of polymer 26 (P-7)

21 22

a) Compound 22 is synthesized starting from compound 20 [88949-34-2] in analogy to compound 9 in Example 2.

b) Compound 24 is synthesized starting from compound 22 and compound 23 [2895-07-0]

(P-7), c) Compound 26 is synthesized starting from compound 24 and compound 25 [476004-83- 8] in analogy to compound 12 in Example 8 of WO2011/144566.

Example 8: Synthesis of compound 31 (I-9)

28 29

a) Compound 28 is obtained from compound 1 and 8-bromo-1-octene 27 in analogy to compound 8 and is purified by column chromatography. ¹ H-NMR data (ppm, CDCb): 8.93 2H d, 7.65 2H d, 7.30 2H dxd, 5.88-5.74 2H m, 5.04-4.92 4H m, 4.09 4H t, 2.05 4H txt, 1.75 4H txt, 1.44-1.22 12H m.

b) Compound 29 is obtained from compound 28 in analogy to compound 9 and is purified by column chromatography. ¹ H-NMR data (ppm, CDCb): 8.68 2H d, 7.26 2H d, 5.88-5.75 2 -4.93 4H m, 4.03 4H t, 2.05 4H txt, 1.72 4H txt,1.46-1.27 12H m.

c) 3.6g of compound 29 and 3.15g of pentamethyldisiloxane 30 are added to 40ml toluene under argon. Then 5mmol Karstedt catalyst in toluene is added (20 drops) and the mixture is stirred at reflux overnight. The solvent is evaporated under reduced pressure and the product is purified by chromatography over silica gel to give a compound of formula 31 . ¹ H- NMR data (ppm, CDCb): 8.69 2H d, 7.25 2H d, 4.00 4H t, 1.74 4H txt, 1.50-1.25 20H m, 0.51 4H t, 0.07 18H s, 0.05 12H s.

Example 9: Synthesis of compound 32 (I-8)

Compound 32 is obtained from compound 29 and 1 ,1 ,1 ,3,5,5,5-heptamethyltrisiloxane 10 in analogy to compound 31 .

Example 10: Synthesis of polymer 34 (P-10)

400mg of compound 31 and 137.8mg of thiophene-diboronicacidpinacolester 33 are dissolved together with 3.7mg palladium(ll)acetate and 22.1 mg of 2-(di-tert-butylphosphino)-1- phenylindole [740815-37-6] in 25ml of degassed tetrahydrofurane under argon. The whole mixture is refluxed for 30 minutes and then 103.2mg of LiOH-monohydrate is added. The reaction mixture is then refluxed 1.5 hours under argon. The reaction mixture is poured on water, precipitated and filtered. The crude polymer is then dissolved in chloroform and the organic phase is refluxed together with a 1 % water solution of NaCN during 1 hour. The phases are separated and the organic phase is still washed 3 times with water. Then the polymer is precipitated out of the chloroform solution with methanol. The crude polymer is then fractionated by Soxhiet extraction with heptane, tetrahydrofurane and chloroform. The chloroform fraction contained 230mg of the desired polymer. Mw 7'900, polydispersity 1.17 (measured by high temperature GPC at 150°C with trichlorobenzene).

Compound 35 is obtained from compound 32 and compound 33 in analogy to compound 34.

Example 12: Synthesis of compound 36 (B-20)

Compound 36 is obtained in analogy to compound 12 from compound 8 and pentamethyl- disiloxane 30. ¹ H-NMR data (ppm, CDCb): H-NMR data (ppm, CDCb): 8.93 2H d, 7.64 2H d, 7.30 2H dxd, 4.08 4H t, 1.79 4H txt, 0.63 4H t, 0.09 18H s, 0.07 12H s.

Example 13: Synthesis of compound 37 (1-10)

1g of compound 36 is dissolved in 10ml of chloroform. Then 550mg of N-bromosuccinimid

(NBS) are added and the reaction mixture is stirred at room temperature overnight. The solvent is evaporated under reduced pressure and the product is chromatographed over silica gel to get compound 37. ¹ H-NMR data (ppm, CDCb): ¹ H-NMR data (ppm, CDCb): 8.69 2H d, 7.26 2H d, 3.98 4H t, 1.75 4H txt, 0.63 4H t, 0.09 18H s, 0.07 12H s;

Examp

39 a) Compound 39 is obtained from compound 1 and bromo-methyl-trimethylsilane 38 in analogy to compound 3. ¹ H-NMR data (ppm, CDCb): 8.88 2H d, 7.62 2H d, 7.30 2H dxd, 3.76 4H s, 0.09 18H s.

b) Compound 40 is obtained from compound 39 in analogy to compound 4. ¹ H-NMR data (ppm, CDCb): 8.64 2H d, 7.25 2H d, 3.64 4H s, 0.11 18H s.

c) Compound 41 is obtained from compound 40 and [479719-88-5] 5 in analogy to compound 6. 1 H-NMR data (ppm, CDCb): 8.93 2H d, 7.33 2H d, 7.31-7.24 6H m, 7.15 2H d, 7.07 2H dxd, 3.78 4H s, 0.15 18H s.

a) Compound 43 is obtained from compound 1 and bromo-methyl-trimethylsilane 42 in analogy to compound 3. ¹ H-NMR data (ppm, CDCb): 8.74 2H d, 7.72 2H d, 7.31 2H dxd, 4.86 4H s, 0.1 1 18H s.

b) Compound 44 is obtained from compound 43 in analogy to compound 4. ¹ H-NMR data

c) Compound 45 is obtained from compound 44 and [479719-88-5] 5 in analogy to compound 6. 1 H-NMR data (ppm, CDCb): 8.73 2H d, 7.34 2H d, 7.31-7.24 6H m, 7.16 2H d, 7.09 2H dxd, 4.88 4H s, 0.15 18H s. Application Example 1 : Application of the semiconducting compound 6

The semiconductor thin film is prepared by spin-coating the compound of the formula 6 obtained in example 1 in a 0.5% (w/w) solution in chloroform. The spin coating is accom- plished at a spinning speed of 3000 rpm (rounds per minute) for about 20 seconds in ambient conditions. The devices are evaluated as deposited and after being annealed at 100°C for 15 minutes.

Transistor performance

The transistor behavior is measured on an automated transistor prober (TP-10, CSEM Zu- rich) and showed clear transistor behavior.

Application Example 2: Photovoltaic application of the semiconducting compound 6

The solar cell has the following structure: Al electrode/LiF layer/organic layer, including compound of the invention/[poly(3,4-ethylenedioxy-thiophene) (PEDOT)/

poly(styrenesulfonic acid) (PSS)]/ITO electrode/glass substrate. The solar cells are made by spin coating a layer of the PEDOT-PSS on a pre-patterned ITO on glass substrate. Then a 1 :1 mixture of the compound of formula 6 (1 % by weight): [70]PCBM (a substituted C70 fullerene) is spin coated (organic layer). LiF and Al are sublimed under high vacuum through a shadow-mask.

Solar cell performance

The solar cell is measured under a solar light simulator. Then with the External Quantum Efficiency (EQE) graph the current is estimated under AM 1.5 conditions.

Application Example 1 (bottom-gate bottom contact (BGBC) field effect transistor (FET)) Semiconductor film deposition:

Siliconwafers (Si n- -(425 + 40 μιη)) with a 230 nm thick S1O2 dielectric and patterned indium tin oxide (15 nm)/ gold (30 nm) contacts (L = 20, 10, 5, 2.5 μιτι, W = 0.01 m; Fraunhofer IPMS (Dresden)) are prepared by standard cleaning by washing with acetone and i- propanol followed by oxygen plasma treatment for 30 minutes.

The substrates are transferred in a glove box. An octyltrichlorsilane (OTS) monolayer is grown on the dielectric surface by putting the substrates in a 50 mM solution of octyltri- chlorosilane (OTS) in trichloroethylene for 1 h. After monolayer growth, the substrates are washed with toluene to remove physisorbed silane. The semiconductor P-10 is dissolved in CHC in a concentration 0.75 % by weight at 80°C and spin-coated at 1500 rpms for 60s onto the substrates.

Application Example 4 (top gate bottom contact (TGBC) FET)

Substrate preparation: For TGBC FETs PET substrates with lithographically patterned 50 nm gold (Au) contacts covered with photoresist are used. Substrates are prepared by standard cleaning in acetone and ethanol and dried at 60°C for 30 min.

Transistor preparation: The semiconductor P-10 is dissolved in trichloroethylene (0.75 wt%) at 80°C for 4h., filtered through a 0.45μ filter, spun to achieve a 50 nm layer and dried for 30 s at 80°C. Immediately after 500 nm layer of dielectric (CYTOP) has been spin-coated and dried for 2 minutes at 80°C 120 nm gold is evaporated through a shadow mask as gate contact.

BGBC and TGBC OFET Measurement: OFET transfer and output characteristics are measured on an Agilent 4155C semiconductor parameter analyzer. The devices are an- nealed in a glovebox at 150°C for 15 minutes before the measurements are done in a glove box under a nitrogen atmosphere at room temperature. For p-type transistors the gate voltage (V _g ) varies from 10 to -30 V and at drain voltage (Vd) equal to -3 and -30V for the transfer characterisation. For the output characterization Vd is varied from 0 to -30V at V _g = 0, - 10, -20, -30 V.

The results of BGBC and TGBC FET measurements are reported in the Table below:

Appl. ExMobility,

Semiconductor Solvent On/off ample cm s

3 P-10 CHC 1.40E-01 3.80E+06

4 P-10 CH3CCI3 0.1 1 3.00E+04