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Title:
DILUTE GROUP III-V NITRIDE INTERMEDIATE BAND SOLAR CELLS WITH CONTRACT BLOCKING LAYERS
Document Type and Number:
WIPO Patent Application WO/2011/031683
Kind Code:
A3
Abstract:
An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute IH-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (Voc) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.

Inventors:
WALUKIEWICZ WLADYSLAW (US)
YU KIN MAN (US)
Application Number:
PCT/US2010/048014
Publication Date:
July 21, 2011
Filing Date:
September 07, 2010
Export Citation:
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Assignee:
ROSESTREET LABS ENERGY INC (US)
WALUKIEWICZ WLADYSLAW (US)
YU KIN MAN (US)
International Classes:
H01L31/042; H01L31/0304; H01L31/068
Foreign References:
US20090014061A12009-01-15
US20060039432A12006-02-23
JPH05110138A1993-04-30
Attorney, Agent or Firm:
BLANCHE, Bradley, D. (LLP2450 Colorado Avenue, Suite 400, Santa Monica CA, US)
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