Title:
DIODE
Document Type and Number:
WIPO Patent Application WO/2019/006888
Kind Code:
A1
Abstract:
Provided is a diode, comprising a P region (11) as an anode, an N- region (12) as a drift region, and an N+ region (13) as a cathode distributed sequentially, wherein an N-type control region (14) is provided in the N- region, the average doping concentration of the N-type control region is greater than that of the N- region, and the thickness of the N-type control region is less than that of the N- region.
Inventors:
JIN RUI (CN)
LIU YUEYANG (CN)
XU ZHE (CN)
WU DI (CN)
WEN JIALIANG (CN)
PAN YAN (CN)
ZHAO YAN (CN)
CAO GONGXUN (CN)
HE FENG (CN)
CUI LEI (CN)
WANG YAOHUA (CN)
LIU JIANG (CN)
LIU YUEYANG (CN)
XU ZHE (CN)
WU DI (CN)
WEN JIALIANG (CN)
PAN YAN (CN)
ZHAO YAN (CN)
CAO GONGXUN (CN)
HE FENG (CN)
CUI LEI (CN)
WANG YAOHUA (CN)
LIU JIANG (CN)
Application Number:
PCT/CN2017/102672
Publication Date:
January 10, 2019
Filing Date:
September 21, 2017
Export Citation:
Assignee:
GLOBAL ENERGY INTERCONNECTION RES INST CO LTD (CN)
International Classes:
H01L29/868
Foreign References:
| US20020130331A1 | 2002-09-19 | |||
| CN104054159A | 2014-09-17 | |||
| CN102687277A | 2012-09-19 | |||
| CN102414805A | 2012-04-11 | |||
| JP2006245294A | 2006-09-14 | |||
| CN101110450A | 2008-01-23 |
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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