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Patent Searching and Data


Title:
DISPLAY DEVICE AND PRODUCTION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2019/146264
Kind Code:
A1
Abstract:
The problem to be addressed by the present invention is to achieve a display device having a TFT that uses an oxide semiconductor which is highly reliable. In summary, the present invention is a display device containing a base board having a display region on which is formed a plurality of pixels each containing a first thin film transistor that uses an oxide semiconductor 108 and is characterized in that a first gate insulation film 107 comprising silicon oxide is formed on one of the surfaces of the oxide semiconductor 108, a second gate insulation film 109 comprising silicon oxide is formed on the other surface of the oxide semiconductor 108, the film-thickness of the first gate insulation film 107 is greater than that of the second gate insulation film 109, and the amount of oxygen released per unit surface area is greater for the first gate insulation film than for the second gate insulation film, as measured by TDS (Thermal Desorption Spectrometry) under the conditions of 100°C to 500°C for the quantification range, at M/z = 32.

Inventors:
HANADA AKIHIRO (JP)
YAMAGUCHI YOHEI (JP)
WATANABE HIROKAZU (JP)
SUZUMURA ISAO (JP)
Application Number:
PCT/JP2018/044515
Publication Date:
August 01, 2019
Filing Date:
December 04, 2018
Export Citation:
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Assignee:
JAPAN DISPLAY INC (JP)
International Classes:
G09F9/00; H01L21/336; G09F9/30; H01L27/32; H01L29/786; H01L51/50; H05B33/10
Domestic Patent References:
WO2017188106A12017-11-02
Foreign References:
JP2016178279A2016-10-06
JP2016136622A2016-07-28
JP2017123427A2017-07-13
JP2017183312A2017-10-05
Attorney, Agent or Firm:
POLAIRE I.P.C. (JP)
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