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Patent Searching and Data


Title:
DISPLAY DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/021938
Kind Code:
A1
Abstract:
The purpose of the present invention is to form a LTPS-TFT and an oxide semiconductor TFT within the same substrate in a display device. To this end, the present invention is configured in the manner described below. This display device comprises a substrate 100 having formed thereon a first TFT in which a polysilicon semiconductor 102 is used and a second TFT in which an oxide semiconductor 108 is used. The display device is characterized in that a first gate insulating film 103 is formed so as to cover the polysilicon semiconductor 102, a first gate electrode 104 is formed on the first gate insulating film 103, the oxide semiconductor 108 is formed at a position separated from the first gate electrode 104 on the first gate insulating film 103, a second gate insulating film 110 is formed so as to cover the oxide semiconductor 108, a second gate electrode 112 is formed on the second gate insulating film 110, and an interlayer insulating film 113 is formed so as to cover the second gate electrode 112.

Inventors:
HANADA Akihiro (3-7-1 Nishi-shinbashi, Minato-k, Tokyo 03, 〒1050003, JP)
WATAKABE Hajime (3-7-1 Nishi-shinbashi, Minato-k, Tokyo 03, 〒1050003, JP)
SUZUMURA Isao (3-7-1 Nishi-shinbashi, Minato-k, Tokyo 03, 〒1050003, JP)
Application Number:
JP2019/025095
Publication Date:
January 30, 2020
Filing Date:
June 25, 2019
Export Citation:
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Assignee:
JAPAN DISPLAY INC. (3-7-1, Nishi-shinbashi Minato-k, Tokyo 03, 〒1050003, JP)
International Classes:
H01L29/786; G02F1/1368; G09F9/30; H01L21/8234; H01L27/088; H01L27/32; H01L51/50; H05B33/02
Foreign References:
JP2018050029A2018-03-29
US20150123084A12015-05-07
JP2011048339A2011-03-10
JP2013168639A2013-08-29
KR20130040342A2013-04-24
US20150243719A12015-08-27
Attorney, Agent or Firm:
POLAIRE I.P.C. (13-11, Nihonbashikayabacho 2-chome Chuo-k, Tokyo 25, 〒1030025, JP)
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