DISTRIBUTION TYPE AMPLIFIER AND MULTISTAGE AMPLIFIER

Title:

DISTRIBUTION TYPE AMPLIFIER AND MULTISTAGE AMPLIFIER

Document Type and Number:

WIPO Patent Application WO/2017/199365

Kind Code:

A1

Abstract:

The present invention is configured so as to connect: an input side transmission line (2) that transmits input signals; an output side transmission line (3) that transmits output signals; a plurality of transistors (5) that amplify the input signals transmitted by the input side transmission line (2), and output the output signals which are the input signals after amplification; and LC resonators (6) in which the resonance frequency is higher than the operating frequency of the transistors (5) between output terminals (5a) of the transistors (5) and the output side transmission line (3). It is thereby possible to reduce output power and power consumption.

Inventors:

KUWATA EIGO (JP)
YAMANAKA KOJI (JP)
SUGIMOTO ATSUO (JP)
KOYAMA HIDETOSHI (JP)
YAMAGUCHI YUTAROU (JP)

Application Number:

PCT/JP2016/064722

Publication Date:

November 23, 2017

Filing Date:

May 18, 2016

Export Citation:

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Assignee:

MITSUBISHI ELECTRIC CORP (JP)

International Classes:

H03F3/68

Domestic Patent References:

WO2014178261A1

2014-11-06

Foreign References:

JP2012231392A

2012-11-22

Other References:

See also references of EP 3447914A4
C. CAMPBELL; L. TAEHUN; V. WILLIAMS; K. MING-YIH; T. HUA-QUEN; P. SAUNIER: "A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology", 2008 CSICS, October 2008 (2008-10-01)