Title:
DOUBLE PATTERNING METHOD AND SEMICONDUCTOR STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2023/092811
Kind Code:
A1
Abstract:
In the double patterning method of the present invention, a layer to be etched, a first mask layer and a second mask layer which are sequentially stacked from bottom to top are provided, wherein the layer to be etched comprises an interconnection region and a peripheral non-interconnection region, the interconnection region comprises first regions and second regions which are alternately arranged in a first axial direction, some of the second regions comprise second parts, and the second parts protrude out of the boundaries of adjacent first regions in a second axial direction; several shielding layer grooves are formed in the second mask layer on the non-interconnection region, wherein the shielding layer grooves are arranged in the first axial direction, and some of the shielding layer grooves are distributed on the side edges of the second parts; the shielding layer grooves are filled to form shielding layers; a photoresist layer is formed on the second mask layer, wherein the photoresist layer is provided with etching openings corresponding to the second regions and auxiliary openings corresponding to the shielding layers. In a photolithography process, a manufacturing process window for the etching openings corresponding to the second parts is increased. The semiconductor structure of the present invention is manufactured by means of the patterning method.
Inventors:
CHEN HAIHUA (CN)
HOU YONGQIANG (CN)
HOU YONGQIANG (CN)
Application Number:
PCT/CN2021/143024
Publication Date:
June 01, 2023
Filing Date:
December 30, 2021
Export Citation:
Assignee:
SHANGHAI IC R&D CT CO LTD (CN)
SHANGHAI INTEGRATED CIRCUIT EQUIPMENT & MAT INDUSTRY INNOVATION CENTER CO (CN)
SHANGHAI INTEGRATED CIRCUIT EQUIPMENT & MAT INDUSTRY INNOVATION CENTER CO (CN)
International Classes:
H01L21/033
Foreign References:
| CN111640655A | 2020-09-08 | |||
| CN111640660A | 2020-09-08 | |||
| CN113363203A | 2021-09-07 | |||
| CN111640664A | 2020-09-08 | |||
| US20170352585A1 | 2017-12-07 |
Attorney, Agent or Firm:
SHANGHAI IFUTURE INTELLECTUAL PROPERTY LAW FIRM (CN)
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