Title:
DRAM TEST DEVICE AND METHOD
Document Type and Number:
WIPO Patent Application WO/2019/041662
Kind Code:
A1
Abstract:
A DRAM test device, comprising: a test frame (101) for inserting a DRAM to be tested, a program storage module (102) for storing a test program, a current test module (103) and a test control module (104). The test control module (104) receives a test switch command of carrying out a current test and a function test on the DRAM to be tested and uploading the test results (S120). By setting the test control module (104), the pre-stored test program is read to complete the function test of the DRAM, and the current test module (103) can also be controlled to load voltage to the DRAM for the current test. Defective products are picked out by setting a low-cost independent module to test the DRAM, and the maximum use efficiency is achieved.
Inventors:
LONG HONGWEI (CN)
LU HAO (CN)
LI ZHIXIONG (CN)
XIAO HAO (CN)
WU FANG (CN)
HU HONGHUI (CN)
DENG ENHUA (CN)
TAN KANGQIANG (CN)
LU HAO (CN)
LI ZHIXIONG (CN)
XIAO HAO (CN)
WU FANG (CN)
HU HONGHUI (CN)
DENG ENHUA (CN)
TAN KANGQIANG (CN)
Application Number:
PCT/CN2017/117226
Publication Date:
March 07, 2019
Filing Date:
December 19, 2017
Export Citation:
Assignee:
SHENZHEN LONGSYS ELECTRONICS CO LTD (CN)
International Classes:
G11C29/56
Foreign References:
| CN201514460U | 2010-06-23 | |||
| US20080229162A1 | 2008-09-18 | |||
| US20030043662A1 | 2003-03-06 | |||
| CN106887253A | 2017-06-23 |
Attorney, Agent or Firm:
LIUJIA CHINA IP LAW OFFICE (CN)
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