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Title:
DRIVE CIRCUIT FOR POWER SEMICONDUCTOR ELEMENT, AND MOTOR DRIVE DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/179274
Kind Code:
A1
Abstract:
A drive circuit (100) for a power semiconductor element is provided with: a power semiconductor element (F1); a gate drive insulation power supply (1) for driving a gate (G) of the power semiconductor element (F1); a voltage increase prevention diode (D3), in which the anode is connected to the gate (G) of the power semiconductor element (F1); a forward bias power supply zener diode (ZD1), in which the cathode is connected to the cathode of the voltage increase prevention diode (D3), and the anode is connected to an emitter (E) of the power semiconductor element (F1); and a voltage adjustment diode (Dx), in which the cathode is connected to the cathode of the voltage increase prevention diode (D3) and the cathode of the forward bias power supply zener diode (ZD1), and the anode is connected to a positive electrode (11) of the gate drive insulation power supply (1).

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Inventors:
TAKEZAWA, Ryuichi (7-3 Marunouchi 2-chome, Chiyoda-k, Tokyo 10, 〒1008310, JP)
KONISHI, Keisuke (13-5 Kudankita 1-chome, Chiyoda-k, Tokyo 73, 〒1020073, JP)
Application Number:
JP2017/013371
Publication Date:
October 04, 2018
Filing Date:
March 30, 2017
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORPORATION (7-3 Marunouchi 2-chome, Chiyoda-ku Tokyo, 10, 〒1008310, JP)
International Classes:
H03K17/08; H03K17/687
Domestic Patent References:
WO2013157086A12013-10-24
Foreign References:
JP2012186605A2012-09-27
JPS6395728A1988-04-26
Attorney, Agent or Firm:
TAKAMURA, Jun (Sakai International Patent Office, Toranomon Mitsui Building 8-1, Kasumigaseki 3-chome, Chiyoda-k, Tokyo 13, 〒1000013, JP)
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