Title:
DRIVE CIRCUIT FOR SIC-METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR (SIC-MOSFET)
Document Type and Number:
WIPO Patent Application WO/2020/224234
Kind Code:
A1
Abstract:
A drive circuit for an SiC-metal-oxide-semiconductor field-effect transistor (SiC-MOSFET), the drive circuit comprising: an isolation circuit, a current amplification module, a logic module and a protection circuit, wherein an input end of the isolation circuit is connected to an input signal, and the isolation circuit is configured to perform signal isolation on the input signal; an output end of the logic module is respectively connected to the current amplification module and the protection circuit, and the logic module is configured to logically control working states of the current amplification module and the protection circuit; an input end of the current amplification module is connected to the output end of the logic module, an output end of the current amplification module is connected to an SiC-MOSFET, and the current amplification module is configured to amplify a signal input by means of the logic module and to convert same into a drive current meeting the requirements of the SiC-MOSFET; and the protection circuit is connected to the SiC-MOSFET and is configured to prevent the occurrence of an SiC-MOSFET malfunction caused by a high voltage pulse generated between a gate electrode and a source electrode of the SiC-MOSFET, and to realize the stable turning-off of the SiC-MOSFET where the voltage of a drain electrode surges during the turning-off of the SiC-MOSFET.
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Inventors:
WU MING (CN)
SONG ZHENHAO (CN)
LV ZHIPENG (CN)
SUN LIJING (CN)
JI YU (CN)
LI RUI (CN)
KOU LINGFENG (CN)
ZHENG NAN (CN)
ZHAO TING (CN)
SONG ZHENHAO (CN)
LV ZHIPENG (CN)
SUN LIJING (CN)
JI YU (CN)
LI RUI (CN)
KOU LINGFENG (CN)
ZHENG NAN (CN)
ZHAO TING (CN)
Application Number:
PCT/CN2019/120556
Publication Date:
November 12, 2020
Filing Date:
November 25, 2019
Export Citation:
Assignee:
CHINA ELECTRIC POWER RES INSTITUTE COMPANY LIMITED (CN)
STATE GRID CORP CHINA (CN)
STATE GRID CORP CHINA (CN)
International Classes:
H03K17/687
Foreign References:
| CN103595225A | 2014-02-19 | |||
| CN105811942A | 2016-07-27 | |||
| US20190096948A1 | 2019-03-28 | |||
| US20180369864A1 | 2018-12-27 | |||
| CN109302169A | 2019-02-01 |
Attorney, Agent or Firm:
BEYOND ATTORNEYS AT LAW (CN)
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