DRIVE PROTECTION CIRCUIT FOR POWER SEMICONDUCTOR DEVICE, AND CONTROL METHOD

WIPO Patent Application WO/2023/216548

A1

Provided in the present invention are a drive protection circuit for a power semiconductor device, and a control method. The drive protection circuit comprises a turning-on and turning-off module, a static protection unit and a dynamic protection unit, wherein the turning-on and turning-off module, the static protection unit and the dynamic protection unit are connected to one another in parallel, and are each connected to a power semiconductor device and arranged between a gate electrode of a power semiconductor and a cathode of same; and the dynamic protection unit is further connected to an anode of the power semiconductor device. By means of the drive protection circuit in the present invention, during complete deenergization of a drive for a power semiconductor device and during a power-on process and a power-off process of same, the potential of a gate electrode of the power semiconductor device is less than that of a cathode, or a potential difference between the gate electrode and the cathode is less than a turning-on voltage for the gate electrode and cathode of a power semiconductor, such that the reliable turning-off of the power semiconductor device is ensured, thereby protecting the power semiconductor device.

ZENG RONG (CN)
YU ZHANQING (CN)
CHEN ZHENGYU (CN)
SHANG JIE (CN)
ZHAO BIAO (CN)
WU JINPENG (CN)
LIU JIAPENG (CN)
QU LU (CN)

PCT/CN2022/133463

November 16, 2023

November 22, 2022

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UNIV TSINGHUA (CN)

H03K17/082; H03K17/56; H03K17/72

CN115085705A	2022-09-20
CN108718193A	2018-10-30
CN112363040A	2021-02-12
CN112803373A	2021-05-14
CN104201871A	2014-12-10

BEIJING IPLING INTELLECTUAL PROPERTY LAW FIRM (CN)

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