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Title:
DRIVING CIRCUIT FOR INSULATED-GATE TYPE SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2018/042873
Kind Code:
A1
Abstract:
Provided is a driving circuit that turns on/off an insulated-gate type semiconductor element by controlling an output current to be supplied to the gate of the insulated-gate type semiconductor element in accordance with a control signal, the driving circuit simply inspecting output current characteristics thereof. This driving circuit is provided with: a current source that generates a current to be supplied to the gate of the insulated-gate type semiconductor element; a current output circuit that controls the supply, to the gate of the insulated-gate type semiconductor element, of the current generated by the current source in accordance with a drive signal; an output current control circuit that controls the magnitude of the current to be generated by the current source in accordance with a control voltage corresponding to the operating temperature of the insulated-gate type semiconductor element; and a control voltage detection terminal that is further provided on the output current control circuit and is capable of detecting the control voltage from the outside.

Inventors:
MORI, Takahiro (1-1, Tanabeshinden, Kawasaki-ku, Kawasaki-sh, Kanagawa 30, 〒2109530, JP)
Application Number:
JP2017/024692
Publication Date:
March 08, 2018
Filing Date:
July 05, 2017
Export Citation:
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Assignee:
FUJI ELECTRIC CO., LTD. (1-1 Tanabeshinden, Kawasaki-ku Kawasaki-sh, Kanagawa 30, 〒2109530, JP)
International Classes:
H03K17/567; H02M1/08; H03K17/16
Domestic Patent References:
WO2015071994A12015-05-21
Foreign References:
JP2013219633A2013-10-24
JP2016127435A2016-07-11
JP2014093836A2014-05-19
JP2015015794A2015-01-22
JP2016077110A2016-05-12
Attorney, Agent or Firm:
HOSHINO, Hiroshi (Asanuma 2nd Bldg.8F, 3-21-10 Hongo, Bunkyo-k, Tokyo 33, 〒1130033, JP)
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