DRIVING CIRCUIT FOR POWER SEMICONDUCTOR ELEMENT

Title:

DRIVING CIRCUIT FOR POWER SEMICONDUCTOR ELEMENT

Document Type and Number:

WIPO Patent Application WO/2010/021082

Kind Code:

A1

Abstract:

Provided is a driving circuit for a power semiconductor element, which can achieve a high-speed response to a voltage change (dV/dt) while reducing power consumption and prevent the malfunction of the power semiconductor element by a simple circuit configuration. The driving circuit for the power semiconductor element is provided with a control circuit for performing on/off control of the power semiconductor element, a direct-current power supply for supplying voltage between control terminals of the power semiconductor element, and a switching element connected between the control terminals of the power semiconductor element. The switching element is turned on when the power-supply voltage of the direct-current power supply decreases or turned on when the voltage between the control terminals of the power semiconductor element increases while the power-supply voltage of the direct-current power supply decreases to thereby cause a short-circuit between the control terminals of the power semiconductor element.

Inventors:

NAKAYAMA YASUSHI (JP)
NAKAGAWA RYOSUKE (JP)

Application Number:

PCT/JP2009/003419

Publication Date:

February 25, 2010

Filing Date:

July 22, 2009

Export Citation:

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Assignee:

MITSUBISHI ELECTRIC CORP (JP)
NAKAYAMA YASUSHI (JP)
NAKAGAWA RYOSUKE (JP)

International Classes:

H02M1/08

Foreign References:

JPH10285909A	1998-10-23
JPH10257755A	1998-09-25
JP2009081962A	2009-04-16
JP2006157367A	2006-06-15
JPS6399616A	1988-04-30
JPH01300617A	1989-12-05
JPH10285909A	1998-10-23

Other References: