Title:
DRIVING CIRCUIT FOR SEMICONDUCTOR ELEMENT, DRIVING METHOD FOR SEMICONDUCTOR ELEMENT, AND MOTOR CONTROL DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/150555
Kind Code:
A1
Abstract:
[Problem] To enable the reduction of power loss while ensuring switching time.
[Solution] This driving circuit 1 controls the time-dependent increase/decrease change of a gate voltage corresponding to the change of a control signal which is input to a main circuit MOSFET 100 equipped with: a pair of a source terminal Sm and a drain terminal Dm through which main current is flowed; and a gate terminal Gm for applying the gate voltage for controlling the circulation state of the main current. The driving circuit 1 has: a drive voltage switching unit 2 for switching, in accordance with the change of the control signal, drive voltage to be output; a low speed control unit 3 for changing the gate voltage in an increasing or decreasing manner at a low speed; an increasing speed control unit 4 for increasing the changing speed of the gate voltage controlled by the low speed control unit 3; and an increasing speed switching unit 5 for switching the presence or absence of the increasing speed control by the increasing speed control unit 4 and the magnitude of the increasing speed change.
Inventors:
UJITA YU (JP)
HIGUCHI MASATO (JP)
YOSHIMI DAISUKE (JP)
KANEDA HEIJI (JP)
HIGUCHI MASATO (JP)
YOSHIMI DAISUKE (JP)
KANEDA HEIJI (JP)
Application Number:
PCT/JP2018/003608
Publication Date:
August 08, 2019
Filing Date:
February 02, 2018
Export Citation:
Assignee:
YASKAWA ELECTRIC CORP (JP)
International Classes:
H02M1/08; H02M1/00
Foreign References:
JP2007228769A | 2007-09-06 | |||
JP2016127686A | 2016-07-11 | |||
JP2013187955A | 2013-09-19 | |||
JP2005300170A | 2005-10-27 |
Other References:
See also references of EP 3748826A4
Attorney, Agent or Firm:
MASUDA Hirofumi et al. (JP)
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