Title:
DRIVING DEVICE OF SEMICONDUCTOR SWITCHING ELEMENT AND POWER CONVERSION DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/135885
Kind Code:
A1
Abstract:
The present invention adjusts the surge voltage of a switching element to a prescribed value or lower while reducing switching loss in accordance with an operation condition. The present invention comprises a gate driving circuit part 11 that drives a semiconductor switching element 101 and a feedback current control part 12 that applies, to a gate G of the semiconductor switching element 101, a feedback current which is calculated by multiplying the rate of change of electricity applied by the gate driving circuit part 11 to the semiconductor switching element 101 by a prescribed gain, wherein: the rate of change of electricity is the rate of change over time of the voltage and/or current applied to the semiconductor switching element 101; and the feedback current control part 12 adjusts the surge voltage of the semiconductor switching element 101 by changing the gain in accordance with an operation condition of the semiconductor switching element 101.
Inventors:
GAO HANGXIAN (JP)
WATANABE SO (JP)
SUZUKI HIROSHI (JP)
WATANABE SO (JP)
SUZUKI HIROSHI (JP)
Application Number:
PCT/JP2022/039241
Publication Date:
July 20, 2023
Filing Date:
October 21, 2022
Export Citation:
Assignee:
HITACHI LTD (JP)
International Classes:
H03K17/16; H02M1/08
Foreign References:
| JP2021141661A | 2021-09-16 |
Other References:
LU, SHU ET AL.: "Active Current Source IGBT Gate Drive With Closed-Loop di/dt and dv/dt Control", IEEE TRANSACTIONS ON POWER ELECTRONICS, vol. 32, no. 5, 2017, pages 3787 - 3796, XP011640377, DOI: 10.1109/TPEL.2016.2587340
Attorney, Agent or Firm:
HIRAKI & ASSOCIATES (JP)
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