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Title:
DRIVING METHOD AND DRIVING DEVICE OF SEMICONDUCTOR ELEMENT, AND POWER CONVERSION DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/198426
Kind Code:
A1
Abstract:
This semiconductor element is on/off-controlled by controlling a gate voltage according to a driving control signal (Ssw). When a gate of the semiconductor element is driven according to the driving control signal (Ssw), gate driving ability is temporally decreased by changing a driving signal (Sdr) from "1" to "0" at a first time (t1), after starting a mirror period (200) of the gate voltage (Vg), in comparison with a period to the first time (t1) from a start time (ts) of a turn-on operation. In addition, at a second time (t2) according to a termination of the mirror period (200), the gate driving ability is increased by changing the driving signal (Sdr) from "0" to "1".

Inventors:
WADA, Yukihiko (7-3 Marunouchi 2-chome, Chiyoda-k, Tokyo 10, 〒1008310, JP)
Application Number:
JP2017/045499
Publication Date:
November 01, 2018
Filing Date:
December 19, 2017
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORPORATION (7-3 Marunouchi 2-chome, Chiyoda-ku Tokyo, 10, 〒1008310, JP)
International Classes:
H03K17/16; H02M1/08; H02M7/48; H03K17/56
Foreign References:
JP2010119184A2010-05-27
JP2011200037A2011-10-06
JP2012147492A2012-08-02
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (Nakanoshima Festival Tower West, 2-4 Nakanoshima 3-chome, Kita-ku, Osaka-sh, Osaka 05, 〒5300005, JP)
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