Title:
DRY CLEANING METHOD USING PLASMA AND STEAM
Document Type and Number:
WIPO Patent Application WO/2020/235823
Kind Code:
A1
Abstract:
A dry cleaning method using plasma and steam according to the present invention comprises: a reaction step of converting amorphous silicon, polycrystalline silicon, silicon oxide, or silicon nitride, formed on a single crystal silicon substrate, into a reactant comprising ammonium hexafluorosilicate in a reaction chamber by using plasma-treated reaction gas; a transfer step of transferring the silicon substrate having the reactant formed thereon to a reactant removal chamber provided separately from the reaction chamber; and a reactant removal step of spraying the reactant with high-temperature steam, supplied through a steam supply port formed in the upper surface portion of the reactant removal chamber, to vaporize the reactant, and discharging the vaporized reactant together with the high-temperature steam through a discharge port formed in the lower surface portion of the reactant removal chamber.
Inventors:
LEE GIL GWANG (KR)
LIM DOO HO (KR)
OH SANG RYONG (KR)
PARK JAE YANG (KR)
LIM DOO HO (KR)
OH SANG RYONG (KR)
PARK JAE YANG (KR)
Application Number:
PCT/KR2020/005423
Publication Date:
November 26, 2020
Filing Date:
April 24, 2020
Export Citation:
Assignee:
MUJIN ELECTRONICS CO LTD (KR)
International Classes:
H01L21/02; H01L21/67
Foreign References:
| KR20190032033A | 2019-03-27 | |||
| KR100780353B1 | 2007-11-30 | |||
| KR101132568B1 | 2012-04-05 | |||
| KR20050022099A | 2005-03-07 | |||
| KR20190032030A | 2019-03-27 |
Attorney, Agent or Firm:
DARAE LAW & IP, LLC (KR)
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