Title:
DRY ETCHING GAS COMPOSITION AND DRY ETCHING METHOD
Document Type and Number:
WIPO Patent Application WO/2018/186364
Kind Code:
A1
Abstract:
There is used a dry etching gas composition containing a saturated or unsaturated hydrofluorocarbon compound represented by general formula (1): CxHyFz (where x, y, and z are integers satisfying 2 ≤ x ≤ 4, y + z ≤ 2x + 2, and 0.5 < z/y < 2) (excluding 1,1,2,2,3-pentafluorocyclobutane and 1,1,2,2-tetrafluorocyclobutane). Using the etching gas composition containing this hydrofluorocarbon makes it possible to selectively etch (b1) a silicon-based film containing nitrogen, with respect to a silicon oxide film, a non-silicon-based mask material, or a polycrystalline silicon film.
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Inventors:
KATO KOREHITO (JP)
IKETANI YOSHIHIKO (JP)
SHIBUSAWA YUKINOBU (JP)
SHIMIZU HISASHI (JP)
IKETANI YOSHIHIKO (JP)
SHIBUSAWA YUKINOBU (JP)
SHIMIZU HISASHI (JP)
Application Number:
PCT/JP2018/014161
Publication Date:
October 11, 2018
Filing Date:
April 02, 2018
Export Citation:
Assignee:
KANTO DENKA KOGYO KK (JP)
International Classes:
H01L21/3065
Domestic Patent References:
| WO2014104290A1 | 2014-07-03 | |||
| WO2009123038A1 | 2009-10-08 | |||
| WO2015194178A1 | 2015-12-23 | |||
| WO2014070838A1 | 2014-05-08 |
Foreign References:
| JPS60115232A | 1985-06-21 | |||
| JP2011528182A | 2011-11-10 | |||
| JP2017050413A | 2017-03-09 | |||
| JP2016149451A | 2016-08-18 | |||
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Other References:
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, vol. 77, 1955, pages 3640 - 2
POLISH JOURNAL OF CHEMISTRY, vol. 52, 1978, pages 71
See also references of EP 3608945A4
POLISH JOURNAL OF CHEMISTRY, vol. 52, 1978, pages 71
See also references of EP 3608945A4
Attorney, Agent or Firm:
SHOWA INTERNATIONAL PATENT FIRM (JP)
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