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Patent Searching and Data


Title:
DRY ETCHING GAS
Document Type and Number:
WIPO Patent Application WO/1998/020526
Kind Code:
A1
Abstract:
A fluorocarbon-base dry etching gas which is free from the global environmental problems; and an etching method in which a plasma gas obtained therefrom is used. The gas comprises a C�2-6? fluorinated ether constituted of carbon, fluorine, hydrogen, and oxygen atoms.

Inventors:
SEKIYA AKIRA (JP)
TAKAGAKI TETSUYA (JP)
MORIKAWA SHINSUKE (JP)
YAMASHITA SHUNICHI (JP)
TAKAICHI TSUYOSHI (JP)
HIBINO YASUO (JP)
FURUTAKA YASUHISA (JP)
IWASAKI MASAMI (JP)
OHTSUKA NORIFUMI (JP)
Application Number:
PCT/JP1997/004028
Publication Date:
May 14, 1998
Filing Date:
November 05, 1997
Export Citation:
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Assignee:
JAPAN AS REPRESENTED BY MINIST (JP)
MECHANICAL SOCIAL SYSTEMS FOUN (US)
ELECTRONIC IND ASS OF JAPAN (JP)
ASAHI GLASS CO LTD (JP)
DAIKIN IND LTD (JP)
SEKIYA AKIRA (JP)
TAKAGAKI TETSUYA (JP)
MORIKAWA SHINSUKE (JP)
YAMASHITA SHUNICHI (JP)
TAKAICHI TSUYOSHI (JP)
HIBINO YASUO (JP)
FURUTAKA YASUHISA (JP)
IWASAKI MASAMI (JP)
OHTSUKA NORIFUMI (JP)
International Classes:
H01L21/302; H01L21/3065; C09K13/08; (IPC1-7): H01L21/302
Foreign References:
JPH06204186A1994-07-22
JPH07169738A1995-07-04
JPH08291299A1996-11-05
Other References:
See also references of EP 1014433A4
Attorney, Agent or Firm:
Ikeura, Toshiaki (Daiichi Nishiwaki Building 58-10, Yoyogi 1-chom, Shibuya-ku Tokyo 151, JP)
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