Title:
DRY ETCHING METHOD, SEMICONDUCTOR ELEMENT MANUFACTURING METHOD, AND CHAMBER CLEANING METHOD
Document Type and Number:
WIPO Patent Application WO/2018/180655
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a method which makes it possible, in a dry process using no plasma, to remove an element constituting material including a stable metal element, such as Ru or Ta, from a surface of an object to be processed, such as a surface of an element or an inner surface of a chamber, without contacting a fluorine-containing gas with the object to be processed at high temperature of more than 100°C. Provided is a dry etching method comprising: a first step of contacting a processing gas including a fluorine-containing interhalogen compound with a material including a specific metal element at a reaction temperature of not less than 0°C and not more than 100°C to obtain a solid product which is a reaction product of the specific metal element and the fluorine-containing interhalogen compound; and a second step of heating the solid product in an inert gas atmosphere or vacuum environment to a temperature higher than the reaction temperature of the first step to vaporize the solid product. The method is characterized in that the specific metal element is one or more elements selected from the group consisting of Ru, Ta, and Nb.
Inventors:
SUZUKI SHOI (JP)
YAO AKIFUMI (JP)
YAO AKIFUMI (JP)
Application Number:
PCT/JP2018/010684
Publication Date:
October 04, 2018
Filing Date:
March 19, 2018
Export Citation:
Assignee:
CENTRAL GLASS CO LTD (JP)
International Classes:
H01L21/302; C23F4/00; H01L21/3065; H01L21/3213; H01L21/768; H01L21/8239; H01L27/105; H01L43/12
Foreign References:
| JP2008297605A | 2008-12-11 | |||
| JP2002175986A | 2002-06-21 | |||
| JP2008121054A | 2008-05-29 |
Attorney, Agent or Firm:
KOBAYASHI, Hiromichi et al. (JP)
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