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Patent Searching and Data


Title:
DRY ETCHING PROCESS FOR COMPOUND SEMICONDUCTORS
Document Type and Number:
WIPO Patent Application WO2005079472
Kind Code:
A3
Abstract:
Accordingly, this invention relates to an dry etching process for semiconductor wafers. More particularly, the present invention discloses a dry etching process including a halogen etchant (24) and a nitrogen gas (28) that selectively etches a compound semiconductor material (18) faster than the front-side metal layers (16A)(16B). Further, the dry etching process produces a vertical wall profile on compound semiconductor material (18) in both X (38) and Y (40) crystalline directions without undercutting the top of a via-opening.

Inventors:
WANG JENNIFER (US)
SHENG HUAI-MIN (US)
BARSKY MIKE (US)
Application Number:
US2005005123W
Publication Date:
April 20, 2006
Filing Date:
February 17, 2005
Export Citation:
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Assignee:
NORTHROP GRUMMAN CORP (US)
International Classes:
H01L21/302; H01L21/306
Foreign References:
US5968845A1999-10-19
US5942447A1999-08-24
US6649082B22003-11-18
US6579802B12003-06-17
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