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Title:
DYNAMIC RANDOM ACCESS MEMORY FOR THREE-LEVEL UNIT, AND METHOD FOR READING SAME
Document Type and Number:
WIPO Patent Application WO/2017/036293
Kind Code:
A1
Abstract:
A dynamic random access memory for a three-level unit, and a method for reading same. The dynamic random access memory (DRAM) for a three-level unit stores three voltage levels (0, VDD/2, VDD) on a plurality of storage units. A selected storage unit is connected to a bit line (BLT) to produce a signal voltage, and a reference bit line (BLR) adjacent thereto produces a VDD/2 reference voltage. An asymmetric sense amplifier (ASA) is used to judge whether a signal voltage is the same as or different from the reference voltage, and the amplifier has a positive offset voltage and a negative offset voltage. Control signals A and B for the ASA are switched at different time points, or are switched at different voltage levels or a combination of both, so as to set the offset voltage to be in a positive or a negative polarity. Data in the storage unit can be read to the local IO by reading twice from the same ASA continuously or reading once from two ASAs. An output of the ASA will be used for recovering a voltage to the storage unit accessed.

Inventors:
LIU, Bo (1329 Daniel Ct, Milpitas, California, 95035, US)
Application Number:
CN2016/094693
Publication Date:
March 09, 2017
Filing Date:
August 11, 2016
Export Citation:
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Assignee:
SHENZHEN XINGMEM TECHNOLOGY CORPORATION (Room 702C, Building 10 Software Park, Keji Middle 2nd Road, Yuehai Sub-district, Nanshan Distric, Shenzhen Guangdong 7, 518057, CN)
International Classes:
G11C7/06
Foreign References:
CN101770802A2010-07-07
CN103745742A2014-04-23
US5949256A1999-09-07
US20060034130A12006-02-16
Attorney, Agent or Firm:
CHOFN INTELLECTUAL PROPERTY (Room 1215-1218, Floor 12 Left Bank Community No.68 Beisihuanxilu Haidian District, Beijing 0, 100080, CN)
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