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Title:
ELASTIC BOUNDARY WAVE DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2010/122993
Kind Code:
A1
Abstract:
Provided is an elastic boundary wave device (1) having a three-medium structure, wherein gaps do not easily form in a first dielectric layer, and the frequency tolerance is low even when using thick IDT electrodes. IDT electrodes (5), a first dielectric layer (3), and a second dielectric layer (4) are formed on top of a piezoelectric substrate (2). The first dielectric layer (3) comprises a deposited film. The thickness of the IDT electrodes is at least 10% of λ. The unevenness of the upper surface of the first dielectric layer (3) is no larger than 5% of λ, said unevenness referring to the difference between: the height, from the upper surface of the piezoelectric substrate, of the first dielectric layer (3) over the center of an electrode finger of the IDT electrode (5); and the height, from the upper surface of the piezoelectric substrate, of the first dielectric layer (3) over the center of an adjacent inter-electrode-finger gap.

Inventors:
NODAKE NAOHIRO (JP)
TAKAHASHI HIDEAKI (JP)
SAIJO SHIN (JP)
Application Number:
PCT/JP2010/056983
Publication Date:
October 28, 2010
Filing Date:
April 20, 2010
Export Citation:
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Assignee:
MURATA MANUFACTURING CO (JP)
NODAKE NAOHIRO (JP)
HIDEAKI TAKAHASHI (JP)
SAIJO SHIN (JP)
International Classes:
H03H9/145; H01L41/22; H01L41/23; H03H3/08
Domestic Patent References:
WO2006003933A12006-01-12
Foreign References:
JP2006279609A2006-10-12
JP2009010927A2009-01-15
JP2005176152A2005-06-30
Attorney, Agent or Firm:
MIYAZAKI, Chikara et al. (JP)
Miyazaki Chikara (JP)
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