Title:
ELECTRIC DEVICE COMPRISING SOLID ELECTROLYTE
Document Type and Number:
WIPO Patent Application WO/2003/028124
Kind Code:
A1
Abstract:
A switch comprising a transistor for selecting a storage cell and a solid electrolyte. In a storage cell, a metal is formed over a drain diffusion layer of a field−effect transistor fabricated on the surface of a semiconductor substrate. A solid electrolyte the carriers of which are the metal is formed on the metal. The solid electrolyte is in contact with the metal with a space therebetween, and the metal is connected to a common ground line. The source of the field−effect transistor is connected to a column address line, and the gate of the transistor is connected to the row address line.
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Inventors:
SAKAMOTO TOSHITSUGU (JP)
AONO MASAKAZU (JP)
HASEGAWA TSUYOSHI (JP)
NAKAYAMA TOMONOBU (JP)
TERABE KAZUYA (JP)
KAWAURA HISAO (JP)
SUGIBAYASHI NAOHIKO (JP)
AONO MASAKAZU (JP)
HASEGAWA TSUYOSHI (JP)
NAKAYAMA TOMONOBU (JP)
TERABE KAZUYA (JP)
KAWAURA HISAO (JP)
SUGIBAYASHI NAOHIKO (JP)
Application Number:
PCT/JP2002/009759
Publication Date:
April 03, 2003
Filing Date:
September 24, 2002
Export Citation:
Assignee:
JAPAN SCIENCE & TECH CORP (JP)
RIKEN (JP)
NEC CORP (JP)
SAKAMOTO TOSHITSUGU (JP)
AONO MASAKAZU (JP)
HASEGAWA TSUYOSHI (JP)
NAKAYAMA TOMONOBU (JP)
TERABE KAZUYA (JP)
KAWAURA HISAO (JP)
SUGIBAYASHI NAOHIKO (JP)
RIKEN (JP)
NEC CORP (JP)
SAKAMOTO TOSHITSUGU (JP)
AONO MASAKAZU (JP)
HASEGAWA TSUYOSHI (JP)
NAKAYAMA TOMONOBU (JP)
TERABE KAZUYA (JP)
KAWAURA HISAO (JP)
SUGIBAYASHI NAOHIKO (JP)
International Classes:
G11C13/02; H01L27/24; H01L45/00; (IPC1-7): H01L45/00; H01L27/10; H01L29/06
Domestic Patent References:
WO2002021598A1 | 2002-03-14 | |||
WO2002037572A1 | 2002-05-10 |
Other References:
TERABE, Kazuya et al., "Quantum point contact switch realized by solid electrochemical reaction", RIKEN review, July 2001, No. 37, pages 7 to 8
Attorney, Agent or Firm:
Goto, Yosuke (4-10 Nishishinbashi 1-chom, Minato-ku Tokyo, JP)
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