ELECTRIC DEVICE COMPRISING SOLID ELECTROLYTE

WIPO Patent Application WO/2003/028124

A1

A switch comprising a transistor for selecting a storage cell and a solid electrolyte. In a storage cell, a metal is formed over a drain diffusion layer of a field−effect transistor fabricated on the surface of a semiconductor substrate. A solid electrolyte the carriers of which are the metal is formed on the metal. The solid electrolyte is in contact with the metal with a space therebetween, and the metal is connected to a common ground line. The source of the field−effect transistor is connected to a column address line, and the gate of the transistor is connected to the row address line.

WO/2005/043583	HIGH-TEMPERATURE ATTACHMENT OF ORGANIC MOLECULES TO SUBSTRATES
WO/2011/031534	THERMALLY SHIELDED RESISTIVE MEMORY ELEMENT FOR LOW PROGRAMMING CURRENT
JP4731794	A switch element having a memory effect and a method for switching the element

SAKAMOTO TOSHITSUGU (JP)
AONO MASAKAZU (JP)
HASEGAWA TSUYOSHI (JP)
NAKAYAMA TOMONOBU (JP)
TERABE KAZUYA (JP)
KAWAURA HISAO (JP)
SUGIBAYASHI NAOHIKO (JP)

PCT/JP2002/009759

April 03, 2003

September 24, 2002

Click for automatic bibliography generation  

JAPAN SCIENCE & TECH CORP (JP)
RIKEN (JP)
NEC CORP (JP)
SAKAMOTO TOSHITSUGU (JP)
AONO MASAKAZU (JP)
HASEGAWA TSUYOSHI (JP)
NAKAYAMA TOMONOBU (JP)
TERABE KAZUYA (JP)
KAWAURA HISAO (JP)
SUGIBAYASHI NAOHIKO (JP)

G11C13/02; H01L27/24; H01L45/00; (IPC1-7): H01L45/00; H01L27/10; H01L29/06

WO2002021598A1	2002-03-14
WO2002037572A1	2002-05-10

TERABE, Kazuya et al., "Quantum point contact switch realized by solid electrochemical reaction", RIKEN review, July 2001, No. 37, pages 7 to 8

Goto, Yosuke (4-10 Nishishinbashi 1-chom, Minato-ku Tokyo, JP)

View/Download PDF      PDF Help

Previous Patent: MATRIX TYPE PIEZOELECTRIC&sol ELECTROSTRICTIVE DEVICE AND ITS MANUFACTURING METHOD

Next Patent: SUBSTITUTED PENTACENE SEMICONDUCTORS