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Title:
ELECTRIC ELEMENT, MEMORY DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT
Document Type and Number:
WIPO Patent Application WO/2007/086325
Kind Code:
A1
Abstract:
An electric element is provided with a first electrode, a second electrode and a variable resistive thin film connected between the first electrode and the second electrode. The variable resistive thin film includes Fe3O4 as a constituting element, and has a crystal grain size of 5nm or more but not more than 150nm.

Inventors:
MITANI SATORU
OSANO KOICHI
MURAOKA SHUNSAKU
NAGO KUMIO
Application Number:
PCT/JP2007/050809
Publication Date:
August 02, 2007
Filing Date:
January 19, 2007
Export Citation:
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Assignee:
MATSUSHITA ELECTRIC IND CO LTD (JP)
MITANI SATORU
OSANO KOICHI
MURAOKA SHUNSAKU
NAGO KUMIO
International Classes:
H01L27/10; G11C13/00; H01L21/822; H01L27/04; H01L45/00; H01L49/00
Domestic Patent References:
WO2005101420A12005-10-27
Foreign References:
JP2004273656A2004-09-30
JP2002111094A2002-04-12
JP2005191312A2005-07-14
Attorney, Agent or Firm:
MAEDA, Hiroshi et al. (5-7 Hommachi 2-chome, Chuo-k, Osaka-shi Osaka 53, JP)
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