Title:
ELECTROCONDUCTIVE BONDING MATERIAL AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/101471
Kind Code:
A1
Abstract:
The present invention provides an electroconductive bonding material with which it is possible to form a bonding layer having an extremely low void ratio at a low application of pressure, and which has high bonding strength and heat conductivity. The present invention pertains to an electroconductive bonding material for bonding a chip and an adherend under pressure, the electroconductive bonding material including silver particles, silver compound particles, and a dispersing agent, wherein the weight ratio of the silver particles and the silver compound particles is from 30:70 to 70:30, and the void ratio of the electroconductive bonding material is 15% or less after the chip and the adherend are compressed and bonded for five minutes at 10 MPa and 280°C under atmosphere.
Inventors:
FURUSHO RIKIA (JP)
ABE SHINTARO (JP)
KONDO TAKESHI (JP)
TANAKA TERUKI (JP)
ABE SHINTARO (JP)
KONDO TAKESHI (JP)
TANAKA TERUKI (JP)
Application Number:
PCT/JP2017/043350
Publication Date:
June 07, 2018
Filing Date:
December 01, 2017
Export Citation:
Assignee:
TANAKA PRECIOUS METAL IND (JP)
International Classes:
B22F1/00; H01B1/22; B22F1/10; B22F7/08; H01B1/00; H01L21/52
Foreign References:
| JP2013207116A | 2013-10-07 | |||
| JP2008166086A | 2008-07-17 | |||
| JP2013149566A | 2013-08-01 | |||
| JP2010257880A | 2010-11-11 | |||
| JP2012094873A | 2012-05-17 | |||
| JP2014029897A | 2014-02-13 |
Attorney, Agent or Firm:
EIKOH PATENT FIRM, P.C. (JP)
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