Title:
ELECTRODE STRUCTURE FOR NITRIDE SEMICONDUCTOR DEVICE, AND NITRIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2014/003058
Kind Code:
A1
Abstract:
According to this electrode structure, a source electrode (111) and a drain electrode (112) are formed between an insulating film (107) and the opening edges (116A, 119A) of trench portions (116, 119) of a layered nitride semiconductor (105), and extend across the surface (107C) of the insulating film (107) from the trench portions (116, 119) so as to contact the surface of the layered nitride semiconductor (105). According to this structure for the ohmic electrodes (111, 112), the maximum electrical field strength at ON times, of the source electrode (111) and the drain electrode (112) at the ends thereof adjacent to the layered nitride semiconductor (105) can be reduced, and the ON withstand voltage improved, as compared with a conventional electrode structure in which the end edge portions of the ohmic electrodes are sandwiched between the layered nitride semiconductor and the insulating layer.
Inventors:
FUJITA KOICHIRO
Application Number:
PCT/JP2013/067518
Publication Date:
January 03, 2014
Filing Date:
June 26, 2013
Export Citation:
Assignee:
SHARP KK (JP)
International Classes:
H01L21/338; H01L21/28; H01L21/336; H01L29/778; H01L29/78; H01L29/812
Foreign References:
| JP2007519231A | 2007-07-12 | |||
| JP2007158149A | 2007-06-21 | |||
| JP2008147524A | 2008-06-26 | |||
| JP2006120694A | 2006-05-11 |
Attorney, Agent or Firm:
SAMEJIMA, Mutsumi et al. (JP)
Mutsumi Sameshima (JP)
Mutsumi Sameshima (JP)
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