Title:
ELECTROMECHANICAL ELECTRON TRANSFER DEVICES
Document Type and Number:
WIPO Patent Application WO/2005/109520
Kind Code:
A2
Abstract:
An electron transfer device is implemented in a structure which is readily capable of achieving charge transfer cycle frequencies in the range of several hundred MHz or more and which can be formed by conventional semiconductor integrated circuit manufacturing processes. The device includes a substrate having a horizontal extent and a pillar on the substrate extending from the substrate vertically with respect to the horizontal extent of the substrate. The pillar is formed to vibrate laterally with respect to the vertical length of the pillar at a resonant frequency which can be several hundred MHz. Drain and source electrodes extend from the substrate vertically with respect to the horizontal extent of the substrate, and have innermost ends on opposite sides of the pillar. The pillar is free to vibrate laterally back and forth between the innermost ends of the drain and source electrodes to transfer charge between the electrodes.
More Like This:
Inventors:
SCHEIBLE DOMINIK V (DE)
BLICK ROBERT H (US)
BLICK ROBERT H (US)
Application Number:
PCT/US2005/006921
Publication Date:
November 17, 2005
Filing Date:
March 04, 2005
Export Citation:
Assignee:
WISCONSIN ALUMNI RES FOUND (US)
SCHEIBLE DOMINIK V (DE)
BLICK ROBERT H (US)
SCHEIBLE DOMINIK V (DE)
BLICK ROBERT H (US)
International Classes:
H01L29/76; H01L49/00; H03H9/02; H03H9/24; (IPC1-7): H01L29/76
Foreign References:
| US6573526B1 | 2003-06-03 |
Other References:
See references of EP 1743381A4
Attorney, Agent or Firm:
Engstrom, Harry C. (150 East Gilman Street Post Office Box 149, Madison Wisconsin, US)
Download PDF:
Previous Patent: FERROMAGNETIC/ SEMICONDUCTOR DUAL-CHANNEL HETEROJUNCTION DEVICE
Next Patent: MAGNETORESISTIVE MEMORY SOI CELL
Next Patent: MAGNETORESISTIVE MEMORY SOI CELL