ELECTRON BEAM PROCESSING FOR MASK REPAIR

Title:

ELECTRON BEAM PROCESSING FOR MASK REPAIR

Document Type and Number:

WIPO Patent Application WO2004066027

Kind Code:

A3

Abstract:

Transmissivity is restored to a gallium stained substrate by directing an electron beam to the substrate in the presence of an etching gas. For higher concentration of implanted gallium, the transparency can be substantially restored without reducing the thickness of the substrate. For lower doses of implanted gallium, the transmission is restored to 100% although the thickness of the substrate is reduced. The invention is suitable for use in the repair of photolitography masks.

Inventors:

STEWART DIANE K (US)
CASEY J DAVID JR (US)
BEATY JOHN (US)
MUSIL CHRISTIAN R (US)
BERGER STEVEN (US)
SIJBRANDIJ SYBREN J (US)

Application Number:

PCT/US2004/001268

Publication Date:

June 30, 2005

Filing Date:

January 16, 2004

Export Citation:

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Assignee:

FEI CO (US)
STEWART DIANE K (US)
CASEY J DAVID JR (US)
BEATY JOHN (US)
MUSIL CHRISTIAN R (US)
BERGER STEVEN (US)
SIJBRANDIJ SYBREN J (US)

International Classes:

B01J19/08; C03C15/00; C23F1/00; C23F1/02; C23F3/00; G03F1/00; G03F9/00; G21K5/10; H01L21/027; G03F; (IPC1-7): G03F9/00; C03C15/00; C23F1/00; C23F1/02; C23F3/00; G21K5/10

Foreign References:

US20030047691A1	2003-03-13
US5035787A	1991-07-30
US6042738A	2000-03-28
US6335129B1	2002-01-01
US6346352B1	2002-02-12
US6368753B1	2002-04-09
US20010037994A1	2001-11-08
US20030000921A1	2003-01-02
US20030123605A1	2003-07-03

Other References: