Title:
ELECTRON SOURCE AND METHOD FOR MAKING SAME
Document Type and Number:
WIPO Patent Application WO2005008706
Kind Code:
A3
Abstract:
A field emitter source and method for making same. An x-ray and a high energy electron source is fabricated from the field emitter. The field emitter source composition comprises carbon black and a mixing medium. An alternative method of field emitter formulation includes providing a quantity of silica with the carbon black and a mixing medium. An x-ray source comprises a substrate (82) and a carbon black field emitter composition (88) provided along a surface (96) of the substrate and an extraction grid (91) to pull electrons from the field emitter film and a metal film biased at high voltage to accelerate the electrons (90). A conductive film (92) is further provided along an upper support structure of the source (94) , such that when the conductive film is struck by the accelerated electrons, the upper support structure converts the impinging high-energy electrons into x-rays. A high energy electron source is also disclosed similar to the x-ray source but without a conductive film and with appropriate apertures to facilitate egress of the high energy electrons.
Inventors:
BUSTA HEINZ H
BOLDRIDGE DAVID W
MYERS RONALD E
BOLDRIDGE DAVID W
MYERS RONALD E
Application Number:
PCT/US2004/010210
Publication Date:
October 20, 2005
Filing Date:
March 31, 2004
Export Citation:
Assignee:
CABOT MICROELECTRONICS CORP (US)
International Classes:
C08K3/04; H01J1/304; (IPC1-7): H01J1/304
Foreign References:
| US6146230A | 2000-11-14 | |||
| US20020085674A1 | 2002-07-04 |
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