Title:
ELECTRON SOURCE
Document Type and Number:
WIPO Patent Application WO/2011/142054
Kind Code:
A1
Abstract:
Provided are an electron source which allows a high-angle current density operation even at a low extraction voltage, and reduces excess current that causes vacuum deterioration; and an electronic device using the electron source. The electron source has a cathode composed of single-crystal tungsten, and a diffusion source provided in the intermediate portion of the cathode. In the cathode, the angle between the axial direction of the cathode and <100> orientation of the cathode is adjusted so that electrons to be emitted from the vicinity of the boundary between (100) surface and (110) surface formed on the tip of the cathode, are emitted substantially parallel to the axis of the cathode. The electronic device is provided with the electron source. The electron source has a cathode composed of single-crystal tungsten, wherein the angle between the axial direction of the cathode and <100> orientation of the cathode is adjusted so that electrons to be emitted from the vicinity of the boundary between (100) surface and (110) surface formed on the tip of the cathode, are emitted substantially parallel to the axis of the cathode; and a diffusion source provided in the intermediate portion of the cathode.
More Like This:
Inventors:
NONOGAKI Ryozo (1135 Nakamur, Shibukawa-city Gunma 20, 〒3778520, JP)
野々垣 良三 (〒20 群馬県渋川市中村1135番地 電気化学工業株式会社 渋川工場内 Gunma, 〒3778520, JP)
野々垣 良三 (〒20 群馬県渋川市中村1135番地 電気化学工業株式会社 渋川工場内 Gunma, 〒3778520, JP)
Application Number:
JP2010/071340
Publication Date:
November 17, 2011
Filing Date:
November 30, 2010
Export Citation:
Assignee:
DENKI KAGAKU KOGYO KABUSHIKI KAISHA (1-1 Nihonbashi-Muromachi 2-chome, Chuo-ku Tokyo, 38, 〒1038338, JP)
電気化学工業株式会社 (〒38 東京都中央区日本橋室町二丁目1番1号 Tokyo, 〒1038338, JP)
NONOGAKI Ryozo (1135 Nakamur, Shibukawa-city Gunma 20, 〒3778520, JP)
電気化学工業株式会社 (〒38 東京都中央区日本橋室町二丁目1番1号 Tokyo, 〒1038338, JP)
NONOGAKI Ryozo (1135 Nakamur, Shibukawa-city Gunma 20, 〒3778520, JP)
International Classes:
H01J1/304; H01J1/15; H01J37/06
Attorney, Agent or Firm:
WATANABE Kaoru (KUNPU INTELLECTUAL PROPERTY AGENTS, SUCCESS-SENGAKUJI BLDG. 3F 2-20-29, Takanawa, Minato-k, Tokyo 74, 〒1080074, JP)
Download PDF:
Claims:
Previous Patent: SURFACE MODIFICATION METHOD AND SURFACE-MODIFIED MATERIAL
Next Patent: METHOD FOR VAPOR-PHASE EPITAXIAL GROWTH OF SEMICONDUCTOR FILM
Next Patent: METHOD FOR VAPOR-PHASE EPITAXIAL GROWTH OF SEMICONDUCTOR FILM
