Title:
ELECTRONIC COMPONENT AND SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING AND MOUNTING THEREOF, AND CIRCUIT BOARD AND ELECTRONIC EQUIPMENT
Document Type and Number:
WIPO Patent Application WO/1998/025297
Kind Code:
A1
Abstract:
A semiconductor device whose package size is nearly the same as the size of a chip, which has a stress absorbing layer, which does not require a flexible substrate, and which can be manufactured in a large number at the same time. A method for manufacturing a semiconductor device includes a process wherein electrodes (12) are formed on a wafer (10), a process wherein a resin layer (14) is formed as a stress reducing layer on the wafer (10) except for the parts where the electrodes (12) are formed, a process wherein a chrome layer (16) is formed as an interconnect on the whole surface of the wafer (10) including the electrodes (12) and the resin layer (14), a process wherein solder balls are formed as external electrodes on parts of the chrome layer (16) which are formed on the resin layer (14), and a process wherein the wafer (10) is diced to semiconductor chips. In the processes for forming the chrome layer (16) and for forming the solder balls, a metal thin film deposition technology used in the wafer process of semiconductor manufacturing is employed.
Inventors:
HASHIMOTO NOBUAKI (JP)
Application Number:
PCT/JP1997/004437
Publication Date:
June 11, 1998
Filing Date:
December 04, 1997
Export Citation:
Assignee:
SEIKO EPSON CORP (JP)
HASHIMOTO NOBUAKI (JP)
HASHIMOTO NOBUAKI (JP)
International Classes:
H01L21/44; H01L21/48; H01L21/50; H01L21/60; H01L21/768; H01L23/31; H01L23/36; H01L23/485; H01L23/532; (IPC1-7): H01L21/3205; H01L21/60
Foreign References:
JPS641257A | 1989-01-05 | |||
JPH0263127A | 1990-03-02 | |||
JPH03198342A | 1991-08-29 | |||
JPH05291262A | 1993-11-05 | |||
JPH0410429A | 1992-01-14 | |||
JPH05226416A | 1993-09-03 | |||
JPH0677283A | 1994-03-18 |
Attorney, Agent or Firm:
Inoue, Hajime (2nd floor 26-13, Ogikubo 5-chom, Suginami-ku Tokyo 167, JP)
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