Title:
ELECTRONIC DEVICES WITH REDUCED OHMIC TO OHMIC DIMENSIONS
Document Type and Number:
WIPO Patent Application WO/2024/044176
Kind Code:
A3
Abstract:
A method of forming ohmic contacts on a semiconductor layer includes forming silicon ohmic contact precursors on the semiconductor layer, depositing a layer of metal on the semiconductor layer including the silicon ohmic contact precursors, reacting the layer of metal with the silicon ohmic contact precursors to form metal silicide ohmic contacts on the semiconductor layer, and selectively removing the layer of metal from the semiconductor layer without removing the metal silicide contacts from the semiconductor layer.
Inventors:
BOTHE KYLE (US)
JONES EVAN (US)
HARDIMAN CHRIS (US)
JONES EVAN (US)
HARDIMAN CHRIS (US)
Application Number:
PCT/US2023/030806
Publication Date:
April 25, 2024
Filing Date:
August 22, 2023
Export Citation:
Assignee:
WOLFSPEED INC (US)
International Classes:
H01L21/28; H01L21/24
Attorney, Agent or Firm:
HALL, David, C. (US)
Download PDF: