The present disclosure relates to an electrostatic chuck and a substrate processing apparatus, and more particularly, to an electrostatic chuck that holds a substrate thereon using an electrostatic force and a substrate processing apparatus in which a substrate held on the electrostatic chuck is loaded into a chamber to perform processing procedures thereon such as etching, CVD, sputtering, ion implantation, ashing, and/or evaporation deposition.

A wafer or a substrate (e.g., a glass substrate) as an object to be processed is subjected to various processing procedures such as etching, CVD, sputtering, ion implantation, ashing, and/or evaporation deposition in a manufacturing process of a semiconductor, a display panel, or the like. In such a case, stable clamping is required, and a mechanical clamp or a vacuum chuck may be used for this purpose, but an electrostatic chuck is also widely used.

The electrostatic chuck (ESC) uses an electrostatic force between two objects having different electrical potentials. A conventional general electrostatic chuck is configured in a structure including a metal plate, a dielectric layer stacked on the upper side of the metal plate via an organic adhesive such as a silicon resin, and electrodes formed in the dielectric 1 ayer .

In addition, an electrostatic chuck in which the electrodes formed in the dielectric layer have a single polarity is referred to as a monopolar electrostatic chuck (a monopolar ESC or a unipolar ESC), and an electrostatic chuck in which the electrodes have two polarities different from each other is referred to as a bipolar electrostatic chuck (a bipolar ESC).

Meanwhile, as recent wafers or glass substrates have become larger, electrostatic chucks have also become larger, and a method of forming a dielectric body and electrodes using plasma spraying has been used in the manufacture of electrostatic chucks.

In an OLED manufacturing process, an electrostatic chuck (ESC) having a substrate (and a mask) held thereon moves through a plurality of chambers (a pretreatment chamber, a plurality of deposition chambers, and the like). When the ESC is unnecessarily heated in each chamber, the substrate (and the mask) may be deformed, or the chucking force may be weakened, which may make it difficult to maintain alignment accuracy between the substrate and the mask.

Therefore, cooling of the ESC is important. In this case, it takes a considerable time to remove the heat, which makes the process complicated and increases a tact time.

[7] ^ 11]

The present disclosure relates to an electrostatic chuck and a substrate processing apparatus, and more particularly, to an electrostatic chuck that holds a substrate thereon using an electrostatic force and a substrate processing apparatus in which a substrate held on the electrostatic chuck is loaded into a chamber to perform processing procedures thereon such as etching, CVD, sputtering, ion implantation, ashing, and/or evaporation deposition.

The present disclosure provides an electrostatic chuck and a substrate processing apparatus in which a base of an electrostatic chuck is formed in a shape advantageous for cooling and appropriate coolant is filled in and/or circulated in the base in order to enable rapid cooling by the electrostatic chuck itself.

According to the present disclosure, it is possible to provide an electrostatic chuck and a substrate processing apparatus in which a base constituting the body of the electrostatic chuck is formed in a shape advantageous for cooling, and coolant forms a part of the base to allow rapid temperature control to be performed by the electrostatic chuck itself.

FIGS. 1A and IB are views schematically illustrating a configuration in which a plurality of chambers are provided in a substrate processing apparatus according to an embodiment of the present disclosure;

FIGS. 2A and 2B are cross-sectional views schematically illustrating an electrostatic chuck and a substrate processing apparatus according to an embodiment of the present disclosure;

FIGS. 3A and 3B are cross-sectional views schematically illustrating an electrostatic chuck and a substrate processing apparatus according to another embodiment of the present disclosure; and

FIGS. 4A to 4B are cross-sectional views schematically illustrating an electrostatic chuck and a substrate processing apparatus according to still another embodiment of the present disclosure.

In order to achieve the object described above, there is provided an electrostatic chuck using an electrostatic force to hold a substrate disposed at a front side of the electrostatic chuck. The electrostatic chuck may include a base, a dielectric body laminated on a front surface of the base, and an electrode disposed in the dielectric body, in which the base includes a first heat exchange part including first protrusions and first recesses repeatedly arranged partially or entirely on a surface of the base opposite to the dielectric body to increase a surface area of the base.

In addition, in the electrostatic chuck according to the present disclosure, the base may include a first base including the first heat exchange part, a second base spaced apart from the first base at a rear side of the first base so that a first cavity is provided between the first base and the second base, and coolant filled in the first cavity.

In addition, in the electrostatic chuck according to the present disclosure, the second base may include a second heat exchange part including second protrusions and second recesses repeatedly arranged partially or entirely on a rear surface of the second base to increase a surface area of the second base.

In addition, the electrostatic chuck may include a first connection tube connected to the first cavity to enable heat exchange between the coolant in the first cavity and external coolant. In addition, the base may further include a third base spaced apart from the second base at a rear side of the second base so that a second cavity is provided between the second base and the third base, and coolant filled in the second cavity, and whereinthe electrostatic chuck according to the present disclosure may further include a second connection tube configured to connect the first cavity and the second cavity to each other, to enable heat exchange between the coolant in the first cavity and the coolant in the second cavity.

Further, in view of the above, there is provided a substrate processing apparatus including: two or more chambers configured to process a substrate; an electrostatic chuck including a base, a dielectric body laminated on a front surface of the base, and an electrode disposed in the dielectric body, the electrostatic chuck using an electrostatic force to hold a substrate disposed at a front side of the electrostatic chuck; and a carrier configured to support the electrostatic chuck and move into and out of the chambers, in which the base includes a first heat exchange part including first protrusions and first recesses repeatedly arranged partially or entirely on a surface of the base opposite to the dielectric body to increase a surface area of the base.

In addition, in the substrate processing apparatus according to the present disclosure, the chambers include a guide configured to support the carrier, so as to allow the carrier to slide along the guide, and an inner space of each of the chambers is partitioned, by the guide, the carrier, and the electrostatic chuck, into a front space and a rear space isolated from each other .

In addition, in the substrate processing apparatus according to the present disclosure, the base may include a first base including the first heat exchange part, a second base spaced apart from the first base at a rear side of the first base so that a first cavity is provided between the first base and the second base, and coolant filled in the first cavity.

In addition, in the substrate processing apparatus according to the present disclosure, the second base may include a second heat exchange part including second protrusions and second recesses repeatedly arranged partially or entirely on a rear surface of the second base to increase a surface area of the second base.

In addition, the substrate processing apparatus according to the present disclosure may further include: a first connection tube connected to the first cavity to enable heat exchange between the coolant in the first cavity and external coolant; and a control unit configured to control the heat exchange of the coolant through the first connection tube to be performed when the electrostatic chuck is located in the chambers or when the electrostatic chuck is located out of the chambers.

In addition, in the substrate processing apparatus according to the present disclosure, the base may further include a third base spaced apart from the second base at a rear side of the second base so that a second cavity is provided between the second base and the third base, and coolant filled in the second cavity, and wherein the substrate processing apparatus according to the present disclosure may further include a second connection tube configured to connect the first cavity and the second cavity to each other, to enable heat exchange between the coolant in the first cavity and the coolant in the second cavity.

In addition, in the substrate processing apparatus according to the present disclosure, the base may further include a third base spaced apart from the second base at a rear side of the second base so that a second cavity is provided between the second base and the third base, and coolant filled in the second cavity, and wherein the substrate processing apparatus according to the present disclosure may further include a third connection tube configured to connect the first cavity and the second cavity to each other, to enable heat exchange between the coolant in the first cavity and the coolant in the second cavity, and a control unit configured to control the heat exchange of the coolant through the third connection tube to be performed when the electrostatic chuck is located in the chambers or when the electrostatic chuck is located out of the chambers.

Efl]

Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. However, in the following description of the present disclosure, descriptions of well-known functions or constructions will be omitted in order to make the gist of the present disclosure clear.

FIGS. 1A and IB are views schematically illustrating a configuration in which a plurality of chambers 20 are provided in a substrate processing apparatus 1 according to an embodiment of the present disclosure, and FIGS. 2A and 2B are cross-sectional views schematically illustrating an electrostatic chuck 10 and a substrate processing apparatus 1 according to an embodiment of the present disclosure.

The substrate processing apparatus 1 according to the present disclosure includes a plurality of chambers 20, an electrostatic chuck 10, and a carrier 30, as illustrated in FIGS. 1A and IB.

The electrostatic chuck 10 according to the present disclosure is configured to hold a wafer or a substrate as an object to be processed in a manufacturing process of a semiconductor or a display panel using an electrostatic force, and is suitable for holding a large-area substrate, in particular for holding a large-area substrate constituting an Organic Light- Emitting Diode (OLED) display panel.

The substrate processing apparatus 1 is configured to perform various processing processes such as etching, CVD, sputtering, ion implantation, ashing, and/or evaporation deposition on a substrate as an object to be processed, and includes a plurality of (two or more) chambers 20 in which the processing processes are performed, respectively.

When the substrate processing apparatus 1 according to the present disclosure is for an OLED manufacturing process, the electrostatic chuck 10 on which a substrate (and a mask) is held moves through a plurality of chambers (a pretreatment chamber, a plurality of deposition chambers, etc.). An organic material for forming an OLED in a specific chamber may be deposited through a vacuum deposition method, and in another chamber, a metal (e.g., aluminum) may be deposited through vacuum evaporation in order to form an electrode.

As described above, in the substrate processing apparatus 1 according to the present disclosure, a plurality of chambers 20 are provided, and the chambers 20 for respective processes may be provided with components such as a shower head and an evaporation source 80, depending on process conditions.

FIGS. 2 to 4 schematically illustrate an evaporation source 80 configured to heat and evaporate a deposition material in order to deposit the deposition material on a substrate S.

The evaporation source 80 is provided to evaporate a deposition material such as an organic material, an inorganic material, or a metal material, and may include a crucible configured to contain the deposition material and a heater configured to heat the deposition material inside the crucible.

When the substrate processing apparatus 1 according to the present disclosure is for atomic layer deposition, a gas injection structure such as a source gas or a reaction gas may be installed in the corresponding chamber 20 in addition to the evaporation source 80.

An electrostatic chuck 10 is fixedly coupled to a carrier 30 so as to hold the substrate S thereon, and the carrier 30 is configured to transfer a substrate S into each chamber 20 and to take out a substrate S from the inside of the chamber 20. In the present disclosure, the carrier 30 is movable in the state of holding the peripheral edge of the electrostatic chuck 10. For example, a transfer rail (not illustrated) to which the carrier 30 is slidably coupled may be provided in order to move the carrier 30 on the substrate processing apparatus 1.

The carrier 30 is movable to the inside or outside of each chamber 20 depending on process environments and conditions (see FIG. 1A) or sequentially movable through the respective chambers 20 (see FIG. IB). The carrier 30 may move through the chambers 20 in various forms.

The electrostatic chuck 10 according to the present disclosure may include a base 100, a dielectric body 200, and electrodes 300. A substrate S is held on the electrostatic chuck 10 by an electrostatic force generated by the electrostatic chuck 10. In the present disclosure, in the relative relationship, the side where the substrate S is positioned is defined as the front side, and the side where the electrostatic chuck 10 is positioned is defined as the rear side.

In each chamber 20 according to the present disclosure, the electrostatic chuck 10 may be placed in the horizontal direction X and a substrate S is held on the upper side or the lower side of the electrostatic chuck 10. Unlike this, as illustrated in FIGS. 2 to 4, the electrostatic chuck 10 may be placed in the vertical direction Y inside the chamber 20, and the substrate S may be held on the front side of the electrostatic chuck 10.

Accordingly, when the electrostatic chuck 10 is placed in the horizontal direction in each chamber 20 according to the present disclosure and the substrate S is held on the upper side of the electrostatic chuck 10, the "front side" described herein substantially corresponds to the upper side, and the "rear side" described herein substantially corresponds to the lower side.

Hereinafter, descriptions will be made on the assumption that the electrostatic chuck 10 is placed in the vertical direction Y inside the chamber 20 and the substrate S is held on the front side of the electrostatic chuck 10.

The base 100 may be made of various materials ensuring sufficient mechanical rigidity, and is preferably made of a metal material. Specifically, the base 10 may be made of aluminum, stainless steel, or the like. The base 100 may have a rectangular plate shape as a whole, and has a predetermined width in a left-and-right direction (a direction orthogonal to X and Y) .

The dielectric body 200 forming the electrostatic chuck 10 may be divided into a first dielectric body 210 and a second dielectric body 220.

The first dielectric body 210 may be formed on the entire front surface of the base 100, may be laminated on and bonded to the base 100, and may form an insulating layer between the base 100 and the electrode 300. The first dielectric body 210 may be formed of various dielectric materials having an insulating property, and may be formed of a ceramic material. In this case, the first dielectric body 20 may be formed on the front surface of the base 100 through a plasma spraying method, a sol-gel method, or the like. More specifically, the first dielectric body 210 may be made of a material selected from or a combination of AI2O ₃ , Y2O ₃ , Zr02, MgO, SiC, AIN, S1 ₃ N4, and S1O2. In particular, the lower dielectric body 20 may be made of AI2O ₃ .

An edge electrode 300 may be made of a conductor, particularly tungsten. In addition, the electrode 300 is electrically connected to a separately provided DC power supply. The formation of the DC power supply and the connection of the DC power supply with the electrode 300 may be implemented through various known methods.

The electrode 300 may be formed on the front side of the first dielectric body 210, and may be formed through a plasma spray method or the like. In this case, the electrode 300 may have various patterns known in the art .

The second dielectric body 220 is formed on the front side of the first dielectric 210 and the electrode 300, and is laminated on and bonded to the first dielectric body 210 and the electrode 300. The second dielectric body

220 forms the entire front face of the electrostatic chuck 10, and the front face of the second dielectric 220 is in contact with the substrate S. As the second dielectric body 220 is formed, the electrode 300 is buried in the first dielectric body 210 and the second dielectric body 220.

The second dielectric body 220 may be formed of various dielectric materials having an insulating property and may be formed of a ceramic material. In this case, the second dielectric body 220 may be formed on the front side of the first dielectric body 210 and the electrode 300 through a plasma spraying method, a sol-gel method, or the like. The second dielectric body 220 may be made of a material, which is the same as the lower dielectric body 210 and through a method, which is the same as the method of forming the first dielectric body 210.

The second dielectric body 220 is preferably formed to have a uniform deposition thickness and surface roughness over the entire area.

In the present disclosure, the base 100 includes a first heat exchange part 110 including first protrusions 111 and first recesses 112 repeatedly arranged partially or entirely on a surface of the base opposite to the dielectric body 200 to increase a surface area of the base. That is, the rear surface of the base 100 is not simply formed as a flat surface, but the first protrusions 111 and the first recesses 112 are repeated over the entire surface, as illustrated in FIGS. 2A and 2B. The first heat exchanging part

110 may be formed in various shapes within a range capable of increasing a surface area of the base 100, and the first protrusions 111 and the first recesses 112 may be formed in various shapes and sizes.

When the base 100 is viewed from the rear side, the first protrusions 111 are relatively protruding portions, and the first recesses 112 are relatively recessed portions.

When the base 100 is viewed from the rear side, the first protrusions 111 may be repeatedly provided along the rows and the columns, and may have in the form of rectangular protrusions as shown in FIGS. 2 to 4. Unlike this, the first protrusions 111 may be formed to be curved in the protruding surfaces of the base 100.

The first recesses 112 may also be formed to be curved in the recessed surfaces of the base 100.

With this configuration, as compared with the case in which the rear surface of the base 100 is simply flat, an area of the rear surface of the base 100 of the present disclosure to be in contact with surroundings of the base (the space inside or outside the chamber 20) is increased, and the heat transfer in the rearward direction of the base 100 is excellent. Therefore, it is possible to prevent the electrostatic chuck 10 in the chamber 20 from being unnecessarily heated, thereby effectively preventing problems such as deformation of a substrate S (and a mask) and weakening of the chucking force, and the electrostatic chuck 10 can be rapidly cooled between substrate processing processes.

Meanwhile, as illustrated in FIG. 2B, in the substrate processing apparatus 1 according to the present disclosure, the chamber 20 may further include guides 23a and 23b, and the guides 23a and 23b are configured to be capable of supporting the carrier 30 that is slidable in a left-and-right direction (a direction orthogonal to X and Y), and are formed integrally with the chamber 20 inside the chamber 20.

The guides 23a and 23b may include an upper guide 23a and a lower guide 23b, and each of the guides 23a and 23b may have a constant section in the left-and-right direction (a direction orthogonal to X and Y), so that the carrier 30 on which a substrate S is held is configured to be easily slidable in the left-and-right direction.

In the present disclosure, the space inside the chamber 20 may be partitioned into a front space 21 and a rear space 22, which isolated from each other, by the guides 23a and 23b, the carrier 30, and the electrostatic chuck 10.

This makes it possible to prevent the deposition material or the like from moving toward the rear space 22 during the substrate processing process, to block communication between the rear space 22 and the front space 21 when the temperature of the front portion of the electrostatic chuck 10 rises in the front space 21 inside the chamber 20, and to perform the cooling of the electrostatic chuck 10 by the base 100 more effectively.

FIGS. 3A and 3B are cross-sectional views schematically illustrating an electrostatic chuck 10 and a substrate processing apparatus 1 according to another embodiment of the present disclosure.

In the electrostatic chuck 10 and the substrate processing apparatus 1 according to the present disclosure, the base 100 may include a first base 100a, a second base 100b, and coolant 130a, and the apparatus 1 may include a first connection tube 140 and a control unit 40 (see FIGS. 3A and 3B).

Here, the substrate processing apparatus 1 may include the guides 23a and 23b described above (see FIG. 3B).

The first base 100a includes a first heat exchange part 110 configured as described above, and includes first protrusions 111 and first recesses 112 to increase a surface area to be in contact with surroundings of the first base 100a (e.g., the coolant 130a).

The second base 100b is spaced apart from the first base 100a to the rear side of the first base such that a first cavity 130 is provided between the second base 100b and the first base 100a. The second base 100b may be provided with a second heat exchange part 120 including second protrusions 121 and second recess 122 repeatedly arranged to increase a surface area of the second base 100b over the entire rear surface.

The second protrusions 121 and the second recesses 122 of the second heat exchange part 120 may be formed in a shape and size, which is the same as or different from those of the first protrusions 111 and the first recesses 112 of the first heat exchanger 110.

The first base 100a and the second base 100b may be separately formed and then coupled to each other through welding, and the first cavity 100, which is a space between the first base 100a and the second base 100b is hermetically sealed to be isolated from the space outside the electrostatic chuck 10.

The first cavity 130 is filled with the coolant 130a, which may be made of various coolant materials excellent in specific resistance, specific heat, and heat capacity. In particular, the coolant 130a may be made of Gal den (registered trademark).

The first cavity 130 is filled with the coolant 130a and the first heat exchange part 110 of the first base 100a and the coolant 130a inside the first cavity 130 are partially or entirely in contact with each other, so that the heat on the first base 100a can be effectively transferred into the first cavity 130 and the portion of the electrostatic chuck 10 in contact with the substrate S inside the chamber 20 can be effectively prevented from being unnecessarily heated.

The coolant 130a in the first cavity 130 is partially or entirely in contact with the second base 100b and the second heat exchanger 120 is provided with the second base 100b, so that in the second base 100b, heat transfer can be effectively performed from the front side to the rear side and the portion of the electrostatic chuck 10 in contact with the substrate S can be more effectively prevented from being unnecessarily heated.

As illustrated in FIG. 3B, the substrate processing apparatus 1 according to the present disclosure may further include guides 23a and 23b, and the space inside the chamber 20 may be partitioned into a front space 21 and a second space 22, which are isolated from each other, by the guides 23a and 23b, the carrier 30, and the electrostatic chuck 10, so that it is possible to prevent the deposition material or the like from moving toward the rear space 22 in the substrate processing process, to prevent the rear space 22 from communicating with the front space 21 when the front space 21 is heated, and to more effectively cool the electrostatic chuck 10 by the base 100.

The first connection tube 140 has a tubular shape, and is connected to the first cavity 130, so that the coolant 130a of the first cavity 130 can be exchanged with the external coolant.

The control unit 40 controls the exchange of the coolant 130a through the first connection tube 140 to be performed when the electrostatic chuck 10 is located inside the chamber 20 or when the electrostatic chuck 10 is located outside the chamber 20. In the present disclosure, the control unit 40 is a device for supplying signals necessary for mechanical/electronic operation of a specific configuration, and may include a central processing unit (CPU) or may include, for example, a storage device, a computing device, and an input /output device.

For example, a first pump 60a configured to circulate or supply the coolant 130a, a first valve 50a configured to control the flow of the coolant 130a, and a storage tank 70a configured to store external coolant therein may be provided on the first connection tube 140. The first pump 60a and the first valve 50a may be connected to the control unit 40 and the operations of the first pump 60a and the first valve 50a may be controlled by the control unit 40.

FIGS. 3A and 3B schematically illustrate a connection relationship of the electrostatic chuck 10 with the control unit 40, the first connection tube 140, the first valve 50a, the first pump 60a, and the storage tank 70a.

Of course, these components must be configured such that the electrostatic chuck 10 and the carrier 30 are not obstructed in moving through the chamber

20.

When the heat capacity of the coolant 130a in the first cavity 130 is sufficient and all or part of the coolant 130a does not need to be exchanged in the substrate processing process performed in a specific chamber 20, the control unit 40 may control the exchange of the coolant 130a in the first cavity 130 not to be performed during the process in the chamber 20.

After the process in the specific chamber 20 is completed, the control unit 40 allows the coolant 130a in the first cavity 130 to be exchanged before moving to another chamber 20, so that the electrostatic chuck 10 can be rapidly cooled and thus the tack time for the entire process can be reduced.

Alternatively, when the heat capacity of the coolant 130a in the first cavity 130 is insufficient or all or part of the coolant 130a needs to be exchanged upon considering the process time in the substrate processing process performed in another specific chamber 20, the control unit 40 may control the exchange of the coolant 130a in the first cavity 130 to be performed during the process in the chamber 20.

As described above, with the electrostatic chuck 10 and the substrate processing apparatus 1 according to the present disclosure, it is possible to form the base 100 constituting the body of the electrostatic chuck 10 in a shape advantageous for cooling and to make the coolant 130a form a portion of the base 100, so that temperature control can be rapidly performed by the electrostatic chuck 10 itself.

FIGS. 4A and 4B are cross-sectional views schematically illustrating an electrostatic chuck 10 and a substrate processing apparatus 1 according to still another embodiment of the present disclosure.

In the electrostatic chuck 10 and the substrate processing apparatus 1 according to the present disclosure, the base 100 may include a first base 100a, a second base 100b, a third base 100c, and coolant 130a and 150a (see FIGS. 4A and 4B).

Here, the substrate processing apparatus 1 of the present disclosure may include a second connection tube 160 (see FIG. 4A) .

Alternatively, the substrate processing apparatus 1 of the present disclosure may include a third connection tube 170 and a control unit 40 (see FIG. 4B) .

The first base 100a provided with a first heat exchange part 110 and the second base 100b provided with a second heat exchange part 120 may be configured as described above, in which the first heat exchange part 110 is configured such that a surface area to be in contact with the coolant 130a increases and the second heat exchange part 120 is also configured such that a surface area to be in contact with the coolant 150a increases.

The third base 100c is spaced apart from the second base 100b to the rear side of the second base such that a second cavity 150 is provided between the second base 100b and the third base 100c.

The third base 100c may be formed separately from the first base 100a and the second base 100b and then coupled to the second base 100b through welding, and the second cavity 150, which is a space between the third base 100c and the second base 100b is hermetically sealed to be isolated from the space outside the electrostatic chuck 10.

The second cavity 150 is filled with the coolant 150a, which may be made of various materials excellent in resistivity, specific heat, and heat capacity. In particular, the coolant 150a may be made of a material, which is the same as that of the coolant 130a in the first cavity 130.

The second cavity 150 is filled with the coolant 150a and the second heat exchange part 120 of the second base 100b and the coolant 150a inside the second cavity 150 are partially or entirely in contact with each other, so that the heat on the second base 100b can be effectively transferred into the second cavity 150 and the portion of the electrostatic chuck 10 in contact with the substrate S inside the chamber 20 can be effectively prevented from being unnecessarily heated.

The second connection tube 160 has a tubular shape, and connects the first cavity 130 and the second cavity 150, so that the coolant 130a of the first cavity 130 and the coolant 150a of the second cavity 150 can be exchanged with each other. The second connection tube 160 may be made not to be located out of the chamber 20 (see FIG. 4A) .

Here, a second valve 50b configured to control the flow of the coolants 130a and 150a may be provided on the second connection tube 160. When the substrate processing process is performed in the chamber 20, the second valve 50b may be opened such that the coolant 130a or 150a in each of the first cavity 130 and the second cavity 150 can move smoothly.

Meanwhile, the third connection tube 170 has a tubular shape, and connects the first cavity 130 and the second cavity 150, so that the coolant 130a of the first cavity 130 and the coolant 150a of the second cavity 150 can be exchanged with each other. The third connection tube 170 may be configured to be partially located out of the chamber 20.

In addition, the control unit 40 controls the exchange of the coolants 130a and 150a through the third connection tube 170 to be performed when the electrostatic chuck 10 is located inside the chamber 20 or when the electrostatic chuck 10 is located outside the chamber 20. Further, for example, a second pump 60a configured to circulate or supply the coolants 130a and 150a, a third valve 50c configured to control the flow of the coolants 130a and 150a, and a storage tank 70b configured to store external coolant therein may be provided on the third connection tube 170. The second pump 60b and the third valve 50c may be connected to the control unit 40 and the operations of the second pump 60b and the third valve 50c may be controlled by the control unit 40.

FIGS. 4A and 4B schematically illustrate a connection relationship of the electrostatic chuck 10 with the control unit 40, the third connection tube 170, the third valve 50c, the second pump 60b, and the storage tank 70b. Of course, these components must be configured such that the electrostatic chuck 10 and the carrier 30 are not obstructed in moving through the chamber 20.

When the heat capacities of the coolant 130a in the first cavity 130 and the coolant 150a in the second cavity 150 are sufficient and all or part of the coolants 130a and 150a does not need to be exchanged or circulated in the substrate processing process performed in a specific chamber 20, the control unit 40 may control the exchange of the coolants 130a and 150a in the first cavity 130 and in the second cavity 150 not to be performed during the process in the chamber 20. After the process in the specific chamber 20 is completed, the control unit 40 allows the coolants 130a and 150a in the first cavity 130 and the second cavity 150 to be exchanged or circulated before moving to another chamber 20, so that the electrostatic chuck 10 can be rapidly cooled and the tack time for the entire process can be reduced.

Alternatively, when the heat capacity of the coolant 130a in the first cavity 130 is insufficient in the substrate processing process performed in another specific chamber 20, when circulation of the coolant 130a or 150a in each of the first cavity 130 and the second cavity 150 is desired for cooling the electrostatic chuck 10 in the process, or when all or part of the coolants 130a and 150a of the first cavity 130 and the second cavity 150 needs to be exchanged or circulated considering the process time, the control unit 40 may control the exchange and circulation of the coolants 130a and 150a in the first cavity 130 and the second cavity 150 to be performed during the process in the corresponding chamber 20.

Then, it is possible to provide an electrostatic chuck 10 and a substrate processing apparatus 1, in which temperature control (cooling) can be more appropriately performed to be suitable for the characteristics of each substrate processing process.

Although specific embodiments of the present disclosure have been described and illustrated above, it is evident to a person ordinarily skilled in the art that the present disclosure is not limited to the described embodiments, and various changes and modifications can be made without departing from the technical idea and scope of the present disclosure. Accordingly, such modifications or variations should not be understood individually from the technical spirit and viewpoint of the present disclosure, and the modifications and variations should be deemed to fall within the scope of the claims of the present disclosure.

[A> _¾ AT- oi ₇ HHP

The present disclosure overcomes the existing technology in view of the fact that the present disclosure is capable of providing an electrostatic chuck and a substrate processing apparatus in which a base constituting the body of the electrostatic chuck is formed in a shape advantageous for cooling and coolant forms a part of the base to enable rapid temperature control by the electrostatic chuck itself. By overcoming the limit of the existing technique in this way, the present disclosure can be used in the related art, and the possibility of commercialization or marketing of apparatuses to which the present disclosure is applied is sufficient. Further, it is clear that the present disclosure can be practically carried out. Thus, the present disclosure is an industrially applicable disclosure.