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Title:
ELECTROSTATIC DISCHARGE DIODE HAVING DIELECTRIC ISOLATION LAYER
Document Type and Number:
WIPO Patent Application WO/2023/045561
Kind Code:
A1
Abstract:
A semiconductor structure comprises a semiconductor substrate, a trench dielectric layer disposed in a trench of the semiconductor substrate, a first source/drain region disposed in contact with the semiconductor substrate, a gate and a second source/drain region. The gate is disposed between the first source/drain region and the second source/drain region. The semiconductor structure further comprises a dielectric isolation layer disposed between the semiconductor substrate and the second source/drain region.

Inventors:
ZHOU HUIMEI (US)
FROUGIER JULIEN (US)
LIU XUEFENG (US)
ZHANG JINGYUN (US)
YU LAN (US)
WU HENG (US)
WANG MIAOMIAO (US)
BASKER VEERARAGHAVAN S (US)
Application Number:
PCT/CN2022/109081
Publication Date:
March 30, 2023
Filing Date:
July 29, 2022
Export Citation:
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Assignee:
IBM (US)
IBM CHINA CO LTD (CN)
International Classes:
H01L27/06
Foreign References:
US20180301537A12018-10-18
US20130119433A12013-05-16
US6399990B12002-06-04
US20100264491A12010-10-21
Attorney, Agent or Firm:
LIU, SHEN & ASSOCIATES (CN)
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