ELECTROSTATIC DISCHARGE PROTECTION DEVICE FOR HIGH SPEED TRANSMISSION LINES

WIPO Patent Application WO2004025702

A3

A semiconductor device for coupling a transient voltage at an input node to a reference node, the device having a bipolar transistor adapted to couple its collector to an input node and its emitter to the reference node and a driver device adapted to be coupled between the input node and the base terminal of the transistor such that the driver device is responsive to a transient voltage at the input node to turn on the transistor, thereby shunting the transient voltage to the reference node. Preferably, the input node is coupled to a high speed data transmission line that operates below 5v and the reference node is coupled to ground and the transistor is an NPN transistor. The driver may preferably be a gate-drain connected MOS transistor with its gate-drain terminal coupled to the collector terminal of the transistor and its source terminal coupled to the base terminal of the transistor. Alternatively, the driver may be a ligbt emitting diode (LED) or any other diode with a different material (band-gap) and die size than the LED, connected to the bipolar transistor to create a low voltage clamping device.

OCHOA ALFREDO (US)
TEMPLETON GEORGE (US)
WASHBURN JAMES (US)

PCT/US2003/028377

July 01, 2004

September 11, 2003

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PAN JIT AMERICAS INC (US)
OCHOA ALFREDO (US)
TEMPLETON GEORGE (US)
WASHBURN JAMES (US)

H01L27/02; H02H3/20; H02H9/04; H01L; (IPC1-7): H02H3/20; H02H9/04

US5500546A	1996-03-19
US6249410B1	2001-06-19
US5105234A	1992-04-14
US5952849A	1999-09-14
US5079608A	1992-01-07
US6177298B1	2001-01-23

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