Title:
ELEMENT-FORMING WAFER AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2021/100754
Kind Code:
A1
Abstract:
This method for forming an element-forming wafer comprises: preparing a semiconductor wafer (100) having a plurality of chip-forming regions (101); forming a thin layer (110) on the semiconductor wafer (100); and adjusting stress in an element-configuring portion (110a) to a predetermined value, the element-configuring portion (110a) being a portion of the thin layer (110) for configuring elements in the chip-forming regions (101). The adjusting of the stress comprises: placing a resist (120) on the thin layer (110a); exposing the resist (120) using a photomask (200) having an opening (201) formed therein; forming an opening in the resist (120) by developing the resist (120); and performing ion injection using the resist (120) as a mask. The exposing of the resist (120) includes using the photomask with the ratio of the opening thereof adjusted on the basis of the stress generated in the element-configuring portion (110a).
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Inventors:
TESHIGAHARA AKIHIKO (JP)
SUZUKI MEGUMI (JP)
SUZUKI MEGUMI (JP)
Application Number:
PCT/JP2020/042980
Publication Date:
May 27, 2021
Filing Date:
November 18, 2020
Export Citation:
Assignee:
DENSO CORP (JP)
International Classes:
H04R17/00; H01L21/265; H01L21/266; H01L41/113; H01L41/35; H04R31/00
Foreign References:
| JP2014179572A | 2014-09-25 | |||
| JP2013050673A | 2013-03-14 | |||
| JP2013156102A | 2013-08-15 | |||
| JP2007227887A | 2007-09-06 |
Attorney, Agent or Firm:
YOU-I PATENT FIRM (JP)
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